电化学刻蚀法制备LaB6场发射微尖锥阵列

采用电化学刻蚀方法,成功制备出单尖的六硼化镧、钼、钨及钨铼合金场发射冷阴极尖锥,并对这几种场发射单尖锥阴极的电子发射性能进行了测试比较.结果表明,LaB₆作为场发射阴极,具有良好的发射性能和稳定性.在〈111〉面单晶LaB₆基片上,用PECVD法沉积非晶硅作掩膜,制备出具有一定高度的LaB₆微尖锥场发射阵列,结果发现,LaB₆基底较为平整,尖锥阵列呈现出各向异性.该结论对LaB₆材料在场发射阴极方面的进一步研究具有重要的指导意义.     

EMD与神经网络在气液两相流流型识别中的应用

本文提出了EMD与Elman神经网络相结合的气液两相流流型识别的新方法.将压差波动信号经验模态分解(EMD)后的固有模态函数(IMF)进行分析、提取IMF能量作为Elman神经网络的输入特征向量,对水平管内的气液两相流流型进行识别.实验结果表明:该方法优于BP网络且稳定、识别率高,具有可行性.     

Six-Fold Degenerate Dark States in a Four-Level Atomic System

With all driving fields on Raman resonance, a tripod-type atomic system quickly evolves into a dark state decoupled from the lossy excited level. The dark state depends strongly on field Rabi frequencies, spontaneous decay rates, and the initial atomic population in a complicated way. Analytical results reveal that it is a sixfold degenerate dark state with its three components superposed both coherently and incoherently due to population redistribution from spontaneous emission.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

Transmission Properties of W3 Y-Branch Filters in Two-Dimensional Photonic Crystal Slabs

A highly efficient W3 Y-branch filter in a two-dimensional photonic crystal slab with triangular lattice of air holes is designed and fabricated, and its transmission properties are measured. By accurately adjusting the size of the resonant cavities, the minimum wavelength spacing of 7 nm between two channels is realized. The corresponding resonant wavelengths of the two cavities agree well with the calculated ones. This implies that this kind of fiIter may be promising in integrated wavelength division multiplexing system.     

矩形波导栅慢波系统的实验研究

 从实验上研究了矩形波导栅慢波系统的色散特性及其耦合装置的驻波系数，用分布加工的方法分别制作了矩形、燕尾形、梯形3种不同槽形的矩形波导栅慢波结构模型和带输入输出结构的矩形波导栅慢波结构实体模型。采用谐振法测量它们的色散特性和驻波系数，实验结果与理论计算值和模拟值吻合良好。     

窄脉宽激光诱导背向选择性去除金属薄膜制备微电路(特邀)EI北大核心CSCD

为了在透明基板上制备出导电性能良好的微电路,研究了窄脉宽激光正向和背向选择性去除金属薄膜制备的微结构形貌特征,开展了纳秒激光选择性去除Cu薄膜(厚度为150 nm)的实验和温度场仿真研究,揭示了正、背面去除的烧蚀机理和材料的喷射机制。实验结果表明,当激光脉冲能量为0.270~0.542μJ,扫描速度为2 mm/s时,激光诱导背向去除金属薄膜在加工质量方面优于正向加工,其去除几何精度高,轮廓边缘平整,几乎没有溅射。采用优化后的纳秒激光加工工艺参数,激光脉冲能量为0.403μJ,扫描速度2 mm/s,扫描线间距为3μm,制备出均匀分布的铜阵列图案。在相同参数下对玻璃基板上的铜薄膜背向选择性去除,得到具有良好导电性和粘附性的微电路。     

罗丹明类测定三聚氰胺的荧光探针的合成及应用研究

报道了罗丹明乙二醛酰腙的合成及与三聚氰胺的反应。在pH 3.0的缓冲溶液中三聚氰胺对罗丹明乙二醛酰腙的荧光强度有增强作用,其增强程度与三聚氰胺的浓度成正比,据此建立了一种新的测定三聚氰胺含量的荧光分析法。该方法线性范围为0.5~10.0 mg/L,r=0.994,检出限为0.15 mg/L,样品测定的RSD为1.7%(n=7)。     

国产SY-01型液相色谱仪气动泵的改进

SY-01型液相色谱仪目前虽已停止生产,但有不少单位购有此种仪器,并仍在使用。该仪器的气动泵易出故障,主要是因为使用的电子元件质量欠佳,使气动泵电气部件失灵。另外气动泵中使用两个交流电磁阀,因交变电流使铁芯振动,易使上阀门橡皮部份损坏而漏气或粘住。我们针对上述两方面的弊病对气动泵进行改进。改进中省去了气动泵电气部件,克服了这部份易出故障的弊病;将气动泵的两个交流电磁阀的     

86公式(a~2)~(1/2)=｜a｜=a (a≥0) or -a(a<0)的发现与应用

课题的提出想一想，程序Ⅰ揭示了怎样的数学关系？Ｓ１：（ａ）２＝ａ（ａ≥０）．（公式１）Ｔ：对不对呢？我们来验证一下．分别向公式１中输入数据ａ＝０；ａ＝２；ａ＝１３，输出的结果依次是（０）２＝０；（２）２＝２；（１３）２＝１３．结论与公式１相符，说明Ｓ１同学有较强的观察力，一下就抓住了问题本质．结合程序Ⅰ，请同学们谈谈对公式１的认识．Ｓ２：公式１包含有两种运算，先‘取算术平方根’，后‘平方’．Ｓ３：要使ａ有意义，输入的数据ａ必须是非负实数，输出的数据仍是ａ．Ｔ：认识深刻！下面请同学们在不改变上述两…