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51.
General limit theorems are established for l~p-valued Gaussian random fields indexed by a multidimensional parameter,which contain both almost sure moduli of continuity and limits of large increments for the l~p-valued Gaussian random fields under(?)explicit conditions.  相似文献   
52.
High linear alkenes (1-octene and 1-decene) have been hydroformylated using water-soluble rhodium complexes associated with sulfonated diphosphines in the presence of ionic surfactants or methanol. In all cases, the hydroformylation activities were higher than in experiments without additives. The selectivity in aldehydes was higher when we used cetyltrimethylammonium hydrogensulfate (CTAHSO4) as the surfactant or methanol as the co-solvent.  相似文献   
53.
54.
As a consequence of Jensen's inequality, centered operators of probabilistic type (also called Bernstein-type operators) approximate convex functions from above. Starting from this fact, we consider several pairs of classical operators and determine, in each case, which one is better to approximate convex functions. In almost all the discussed examples, the conclusion follows from a simple argument concerning composition of operators. However, when comparing Szász-Mirakyan operators with Bernstein operators over the positive semi-axis, the result is derived from the convex ordering of the involved probability distributions. Analogous results for non-centered operators are also considered.  相似文献   
55.
Generators of some Ramanujan formulas   总被引:2,自引:0,他引:2  
In this paper we prove some Ramanujan type formulas for 1/π but without using the theory of modular forms. Instead we use the WZ—method created by H. Wilf and D. Zeilberger and find some hypergeometric functions in two variables which are second components of WZ—pairs than can be certified using Zeilberger's EKHAD package. These certificates have an additional property which allows us to get generalized Ramanujan's type series which are routinely proven by computer. We call these second hypergeometric components of the WZ—pairs generators. Finding generators seems a hard task but using a kind of experimental research (explained below), we have succeeded in finding some of them. Unfortunately we have not found yet generators for the most impressive Ramanujan's formulas. We also prove some interesting binomial sums for the constant 1/π2. Finally we rewrite many of the obtained series using pochhammer symbols and study the rate of convergence. 2000 Mathematics Subject Classification Primary—33C20  相似文献   
56.
Investigations into the charge-separated states and electron-transfer transitions in tetracyanoethylene (TCNE) complexes have recently generated much interest. In this work we present theoretical calculations showing that the most stable structure of the dianion TCNE2- has D2d symmetry in vacuum as well as in the solvents dichloromethane and acetonitrile. By means of the coupled cluster linear response, we compute the vertical electronic spectrum in both the gas phase and solution. The theoretical results are compared to the experimental data and good agreement is achieved.  相似文献   
57.
The paper presents two results. The first one provides separate conditions for the upper and lower estimates of the distribution of the time of exit from balls of a random walk on a weighted graph. The main result of the paper is that the lower estimate follows from the elliptic Harnack inequality. The second result is an off-diagonal lower bound for the transition probability of the random walk.  相似文献   
58.
We describe a Weak Rankine Hugoniot relation for constrained discontinuous solutions of conservation laws. The constraint is convex in the primitive variable. Various examples show the potential interest of this approach. To cite this article: B. Després, C. R. Acad. Sci. Paris, Ser. I 342 (2006).  相似文献   
59.
We report the realization of an AlGaN/GaN HEMT on silicon (001) substrate with noticeably better transport and electrical characteristics than previously reported. The heterostructure has been grown by molecular beam epitaxy. The 2D electron gas formed at the AlGaN/GaN interface exhibits a sheet carrier density of 8×1012 cm−2 and a Hall mobility of 1800 cm2/V s at room temperature. High electron mobility transistors with a gate length of 4 μm have been processed and DC characteristics have been achieved. A maximum drain current of more than 500 mA/mm and a transconductance gm of 120 mS/mm have been obtained. These results are promising and open the way for making efficient AlGaN/GaN HEMT devices on Si(001).  相似文献   
60.
Qualitative behavior of second order nonlinear differential equations of type y″+p(t)y+q(t)f(y)=0, is studied. It includes properties such as positivity, number of zeros, oscillating nature, boundedness and monotonicity of the solutions.  相似文献   
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