火焰原子吸收光谱法测定滑子蘑中镉、铜、铅和锌

采用HNO3-HClO4(15∶2)作消解液进行溶样,火焰原子吸收光谱法同时测定滑子蘑中镉、铜、铅、锌的分析方法,优化了仪器工作参数、消解及萃取条件,进行了精密度以及共存离子的干扰实验.在最佳测定条件下,4种元素校准曲线相关性好(r为0.9955-0.9999),仪器精密度为0.6%-2.1%,样品加标回收率为94.2%-104.0%,精密度为2.2%-4.3%,方法快捷、准确、灵敏度高,精密度较好,适用于日常分析检测工作,结果令人满意.     

环境水镉污染应急处理的药物及条件挑选

探讨了硫酸铝、聚铝、聚铁对环境水体中的镉的沉淀能力,实验证明当在实际环境水样品中调节pH在7-9之间,聚铁或聚铝能对环境水体中的镉很好的沉淀作用,短期作用比较明显,药剂能在30min左右达到2h的处理效果的70%-90%,而长期作用后(18h)能将水体中的镉降低到10μg/L以下,一立方水的用药量在100-400g之间就可以到达很好的处理效果,而且无二次污染,可为环境水中镉污染的应急处理药品.     

射流注入角对平板气膜冷却特性影响的实验研究

本文对不同射流注入角的典型单排孔冷却结构的平板气膜冷却特性进行了实验研究,研究对象为轴线与主流来流方向分别成30°、60°、90°的射流孔板,对它们在吹风比为0.5、1.0、1.5条件下的射流孔下游的绝热气膜冷却效率分布特性进行了分析.在吹风比M=0.5时,三个射流注入角条件下近孔区域都能形成较好的冷气覆盖效果;M=1.0时,三者的下游横向平均冷却效率基本相同;M=1.5时,注入角60°的条件下冷却效果最好.     

Strengthened Hyper-Raman Lines with the Coherent Superposition State

High-order harmonic generations from a one-dimensional Coulomb potential atom are calculated with the initial state prepared as a coherent superposition between its ground and first excited states. When the energy difference of the two states is small, we can choose proper laser pulse such that the first excited state can be excited only to other bound states instead of being ionized. We show that only the hyper-Raman lines are observable instead of the harmonics. The energy difference of the ground and the first excited state can be deduced from the highest peak of the hyper-Raman lines. We further show that the similar results can be obtained by using a combination of two laser pulses with different frequencies interacting with the atom initially at the ground state.     

Structural Change in Au^3＋-Doped BK7 Glass Irradiated by Femtosecond Laser

We report on structural change in an Au^3＋-doped BK7 glass irradiated by an infrared femtosecond laser at 800 nm. A grating structure is inscribed in the glass sample. The glass sample is then annealed at various temperatures. Structural change of the grating is observed by an optical microscope. Absorption spectra indicate that colour centres are induced after the laser irradiation, and they decrease with increasing annealing temperature. Au nanoparticles are precipitated at high temperatures （≥ 600℃）. The mechanisms of the phenomena are discussed.     

Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films

The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition （ALD） using bis（cyclopentadienyl） ruthenium [RuCp2] and oxygen as ruthenium precursor and reactant respectively at a deposition temperature of 330℃. The low-energy Ar ion bombardment and Ru pre-deposition are performed to the underlying TaN substrates before ALD process in order to improve the Ru nucleation. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are carried out to characterize the properties of ALD Ru films. The results show that the nucleation density of Ru films with Ar^＋ bombardment to the underlying TaN substrates is much higher than that of the ones without any pretreatment. The possible reasons are discussed.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

Measurement of Gamma-Rays from 11ΛB and 12ΛC

From the ^12 C（π^＋,K^＋）^12 AC reaction the γ -rays of 261.6±0.24 ke V（7/2^＋ →5/2^＋）and 1481.7±0.7 ke V（1/2^＋ →5/2^＋） of ^11 A B,and 2667.3±2.8 keV（1^- 2 → 2^- 1）of ^12 A C hypernuclei have been identified using a large germanium detector array Hyperball2 at K6 beam line of KEK. The observed energies of the transitions 1481.7keV and 261.6 keV are significantly different from the values predicted by the shell model using the △ and SN parameters determined from the ^7 △ Li data.     

Coherent Structures in Transition of a Flat-Plate Boundary Layer at Ma = 0.7

Direct numerical simulation （DNS） of a spatially evolving fiat-plate boundary layer transition process at free stream Mach number 0. 7 is performed. Tollmien-Schlichting （T-S） waves are added on the inlet boundary as the disturbances before transition. Typical coherent structures in the transition process are investigated based on the second invariant of velocity gradient tensor. The instantaneous shear stress and the mean velocity profile in the transition region are studied. In our view, the fact that the peak value of shear stress in the stress concentration area increases and exceeds a threshold value during the later stage of the trallsition process plays an important role in the laminar breakdown process.     

Photon-Assisted Conductance Structure for a Quantum Dot

We investigate theoretically the electron transport of a two-level quantum dot irradiated under a weak laser field at low temperatures in the rotating wave approximation. Using the method of the Keldysh equation of motion for nonequilibrium Green function, we examine the conductance for the system with photon polarization perpendicular to the tunnelling current direction. It is demonstrated that by analytic analysing and numerical examples, a feature of conductance peak splitting appears, and the dependence of conductance on the incident laser frequency and self-energy are discussed.