Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

Measurement of Gamma-Rays from 11ΛB and 12ΛC

From the ^12 C（π^＋,K^＋）^12 AC reaction the γ -rays of 261.6±0.24 ke V（7/2^＋ →5/2^＋）and 1481.7±0.7 ke V（1/2^＋ →5/2^＋） of ^11 A B,and 2667.3±2.8 keV（1^- 2 → 2^- 1）of ^12 A C hypernuclei have been identified using a large germanium detector array Hyperball2 at K6 beam line of KEK. The observed energies of the transitions 1481.7keV and 261.6 keV are significantly different from the values predicted by the shell model using the △ and SN parameters determined from the ^7 △ Li data.     

Coherent Structures in Transition of a Flat-Plate Boundary Layer at Ma = 0.7

Direct numerical simulation （DNS） of a spatially evolving fiat-plate boundary layer transition process at free stream Mach number 0. 7 is performed. Tollmien-Schlichting （T-S） waves are added on the inlet boundary as the disturbances before transition. Typical coherent structures in the transition process are investigated based on the second invariant of velocity gradient tensor. The instantaneous shear stress and the mean velocity profile in the transition region are studied. In our view, the fact that the peak value of shear stress in the stress concentration area increases and exceeds a threshold value during the later stage of the trallsition process plays an important role in the laminar breakdown process.     

Photon-Assisted Conductance Structure for a Quantum Dot

We investigate theoretically the electron transport of a two-level quantum dot irradiated under a weak laser field at low temperatures in the rotating wave approximation. Using the method of the Keldysh equation of motion for nonequilibrium Green function, we examine the conductance for the system with photon polarization perpendicular to the tunnelling current direction. It is demonstrated that by analytic analysing and numerical examples, a feature of conductance peak splitting appears, and the dependence of conductance on the incident laser frequency and self-energy are discussed.     

Creep Motion in Two-Dimensional Fully Frustrated Coulomb Gas Model

The creep motion in a two-dimensional fully frustrated square lattice Coulomb gas model with disorders is studied by using the Monte Carlo technique. The dependence of charge current density J on electric field E is investigated at low temperature T and at low E. The results show that the creep obeys the Arrhenius law J - C（T） exp[-U（E）/T]. The prefactor C（T） increases with the temperature in a power law relation with an exponent about 3.0. The energy barrier U （ E） increases logarithmically with Ec,/ E as U （ E） - Uo ln（ Ec/ E） with Ec being the critical field at zero temperature.     

Phase Transition and EOS of Marmatite （Zn0.76Fe0.23S） up to 623K and 17 GPa

In situ energy dispersive x-ray diffraction for natural marmatite （Zn0.76Fe0.23S） is performed up to 17. 7 GPa and 623 K. It is fit, ted by the Birch-Murnaghan equation of state （EOS） that Ko and α0 for marmatite are 85（3）GPa and 0.79（16）＊10^-4 K^-1, respectively. Fe^2＋ isomorphic replacing to Zn^2＋ in natural crystal is responsible for high bulk modulus and thermal expansivity of marmatite. Temperature derivative of bulk modulus （OK/OT）p for marmatite is fitted to be -0.044（23） GPaK^-1. The unambiguous B3-B1 phase boundaries for marmatite are determined to be Pupper（GPa）= 15.50 - 0.016T（℃） and Plower （GPa）=9.94-0.012T（℃） at 300-623K.     

Bounce-Averaged Acceleration of Energetic Electrons by Whistler Mode Chorus in the Magnetosphere

We construct the bounce-averaged diffusion coefficients and study the bounce-averaged acceleration for energetic electrons in gyroresonance with whistler mode chorus. Numerical calculations have been performed for a band of chorus frequency distributed over a standard Gaussian spectrum specifically in the region near L = 4.5, where peaks of the electron phase space density occur. It is found that whistler mode chorus can efficiently accelerate electrons and can increase the phase space density at energies of about 1 MeV by more than one order of magnitude about one day, in agreement with the satellite observations during the recovery phase of magnetic storms.     

干涉条纹边缘检测方法的比较与改进

研究了干涉条纹边缘检测中的Sobel算子和Laplacian算子,针对二者使干涉条纹变粗和模糊的现象,提出了改进的Laplacian算子。该改进算子先对干涉条纹利用Gauss函数进行平滑,然后再作Laplacian变换。实验结果表明,改进的Laplacian算子克服经典算子的不足,获得清晰的条纹边缘,满足了干涉条纹后续处理要求。     

Structure Stability of LaAlO3 Thin Films on Si Substrates

A series of amorphous and single-crystalline LaAlO3 （LAO） thin films are fabricated by laser molecular-beam epitaxy technique on Si substrates under various conditions of deposition. The structure stability of the LAO films annealed in high temperature and various ambients is studied by x-ray diffraction as well as high-resolution transmission electron microscopy. The results show that the epitaxial LAO films have very good stability, and the structures of amorphous LAO thin films depend strongly on the conditions of deposition and post-annealing. The results reveal that the formation of LAO composition during the deposition is very important for the structure stability of LAO thin films.     

Light Irradiation through Small Particles and Its Applications for Surface Nanostructuring in Near Field

We investigate the light scattering through small particles and its applications in nanostructuring, such as nanobumping, nanopatterning and dry laser cleaning. The theoretical calculation based on Mie theory provides an exact solution for sphere cavity resonance and plasmon resonance, which are two mechanisms for dielectric and metallic particles assisted surface nanostructuring in near field. The experimental results indicate that nanobumps on glass surface and subwavelength holes array on silicon surface can be formed without cracks with the self-assembly of 1 μm silica particle mask under laser irradiation. It is also found that the scattering wave by 40 nm gold particles can propagate 200 times away in terms of particle radius as recorded by photoresist under the UV light irradiation. Meanwhile, dry laser cleaning of 40nm gold particle on silicon wafer is demonstrated at plasmonic resonance frequency. The total cleaning efficiency is estimated to be 80%.