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941.
The polarization-mode dispersion (PMD) tolerance of 10 Gb/s polarization-multiplexing (PM) system is investigated. Using the importance sampling (IS) method, the outage probabilities of the PM systems with three modulation formats, including on-off keying (OOK), differential phase-shift keying (DPSK) and differential quadrature phase-shift keying (DQPSK), are quantified. When the amplified spontaneous emission (ASE) noise is assumed to be dominant, we evaluate the optical power penalties caused by the PMD effect at bit error rate (BER) of 10−12. The performance of compensated PM systems with variable optical delay line is also described. The simulation results indicate that the OOK signal with higher duty cycle (DC) performs better in the PM systems with PMD compensation. It is found that the higher-order PMD impairs seriously the performance of the PM system, and phase-keying formats are more sensitive to the PMD than the OOK.  相似文献   
942.
Transient optical Kerr effect of liquids C2H4Cl2 and C2H4Br2 is investigated, for the first time to our knowledge, with a femtosecond (fs) probe laser delayed with respect to a coherent fs pump laser. Coherent coupling and electronic Kerr signals are observed around zero delay when pump and probe overlap. Persisting after the pump-probe overlap are Kerr signals arising from the torsional and other intramolecular vibrations of the trans and gauche conformations; Kerr signals arising from the intermolecular motion are also observed. Vibrational quantum interference is only observed in liquid C2H4Br2 and the related beats data are fitted with the torsional vibrations, 91 cm−1 (gauche) and 132 cm−1 (trans), and the CCBr angle-bending vibrations, 231 cm−1 (gauche) and 190 cm−1 (trans), with dephasing times, 0.45 ps, 0.45 ps, 2 ps, and 1.5 ps, respectively. These vibrational frequencies agree with those obtained in the frequency-domain. That no vibrational mode is observed for C2H4Cl2 might be attributed to ineffective Raman-pumping. Kerr signals observed after the pump-probe overlap are Fourier transformed to give the spectra of the intermolecular motion and the vibrational spectrum, which agrees with the one observed in the infrared absorption and/or Raman scattering heretofore.  相似文献   
943.
基于目前针对糖尿病的研究主要集中在健康管理及血糖浓度监测方面,在糖尿病病情控制方面并不乐观的现状,设计开发了一套能够实时监护老年患者注射药物情况的远程家庭医疗系统。该系统由智能检测硬件系统,手机客户端和WEB信息管理端组成,不仅可以解决独孤老人时常忘记注射胰岛素的问题,也有利于解决我国老年患者糖尿病监护难的问题,同时也能提醒青壮年实时携带注射针剂盒,缓解糖尿病并发症的发生。通过实时实验测试,该糖尿病监护系统可靠、稳定,且具有良好的实际应用价值。  相似文献   
944.
We report on the photodissociation dynamics of CO2+ via its Ã2Πu,1/2 state using the scheme of [1+1] photon excitation that is intermediated by the mode-selected Ã2Πu,1/2( u1,u2,0) vibronic states. Photodissociation fragment exciation spectrum and images of photofragment CO+ have been measured to obtain reaction dynamics parameters such as the available energy and the average translational energy. Combining with the potential energy functions of CO2+, the dissociation mechanism of CO2+ is discussed. The conformational variation of CO2+ from linear to bent on the photodissociation dynamics of CO2+ is verified.  相似文献   
945.
The origin of the Rayleigh scattering ring effect has been experimentally examined on a quantum dot/metal film system, in which CdTe quantum dots embedded in PVP are spin-coated on a thin Au film. On the basis of the angle-dependent, optical measurements under different excitation schemes (i.e., wavelength and polarization), we demonstrate that sur-face plasmon assisted directional radiation is responsible for such an effect. Moreover, an interesting phase-shift behavior is addressed.  相似文献   
946.
黄瑞  陈建辉  高敏  陶贵明 《应用声学》2017,25(5):119-122
近程巡飞弹姿态控制系统是一个非线性、时变性及耦合性的复杂控制系统,是近程巡飞弹武器系统型号研制的关键技术之一;传统的PID控制在不同巡飞状态下调节稳定性较差、响应时间慢、影响姿态控制的稳定性和机动性;针对近程巡飞弹姿态控制系统中PID控制参数不可调,自适应、抗干扰性能较差等问题,引入了自适应模糊PID控制方法,使系统在不同巡飞姿态和干扰条件下能够实时整定PID的三个控制参数,提高系统的控制性能;在此基础上设计了近程巡飞弹的姿态角控制回路,并以俯仰角为例,在Matlab/Simulink平台下建立仿真模型,进行仿真实验;仿真结果显示,采用自适应模糊PID的控制方法,系统控制性能更好,抗干扰能力和自适应能力优于传统PID控制,减小了巡飞过程中姿态角的波动情况。  相似文献   
947.
轻质水泥在油气田固井中的广泛应用使得传统声阻抗测井方式难以准确地对固井水泥胶结质量作出评价。本文基于弯曲型Lamb波传播特征对层状介质胶结质量较为敏感的特点,首先对套管井建立合适的层状介质模型,计算了层状介质的平面波反射系数,从反射系数的角度探讨了在套管井内激发弯曲型Lamb波的条件。然后依据该条件并结合声波角谱理论计算了稳态有限宽脉冲束入射时在套管井内产生的弯曲型Lamb波泄漏波的时间波列信号。通过对泄漏波波列信号的分析,得到了弯曲型Lamb波与套管井水泥胶结质量间的关系。研究表明,入射声波在满足一定条件下可以在套管内激发弯曲型Lamb波,其传播时的衰减率与套管水泥胶结质量以及水泥的声学参数均相关,当水泥为轻质水泥或者普通水泥时,其衰减率随着套管水泥间水层厚度的增加而减小,当水泥为快水泥时,其衰减率随着水层厚度的减小而增加,但当水层厚度减为零即套管水泥胶结良好情况下,其衰减率转而变小。  相似文献   
948.
采用基于密度泛函理论(DFT-D)体系下的第一性原理平面波超软赝势方法,研究了被不同非金属(B、C、N、F)掺杂的TiO_2(101)表面吸附NH_3的特性与作用机理.研究发现:被非金属掺杂后的表面对NH_3的吸附效果要优于未掺杂表面.不同元素掺杂对比发现:C掺杂后的表面吸附能最大,稳定后吸附距离最小,为最稳定吸附结构.通过Mulliken电荷分布和分态密度的分析,得到了不同吸附条件下NH_3在TiO_2掺杂表面的催化氧化还原作用机理,并发现各模型吸附能的不同是由于掺杂(X)位原子与NH_3分子的相互作用强弱不同所造成.掺杂原子在费米面附近的电子态密度贡献越强,掺杂原子与NH_3分子电荷转移的净值越小,吸附距离越小,吸附能越大,吸附更稳定.  相似文献   
949.
The effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge2Sb2Te5 film. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge2Sb2Te5 film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge2Sb2Te5 film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.  相似文献   
950.
Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In2O3 films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In2O3:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively.  相似文献   
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