变压器寄生参数和负载特性对高压脉冲波形的影响

构建了输出电压幅值为0～20 kV、脉冲重复频率为0.25～20 kHz的双极性高压脉冲电源实验平台,研究了变压器寄生参数与负载特性对输出脉冲波形的影响。采用等效电路复频域解析方法,分析了变压器寄生参数对输出脉冲波形的上升沿、平顶及下降沿的影响规律,并通过改变变压器绕线方案间接验证。发现变压器分布电容和漏感越大,输出脉冲波形上升沿与下降沿越平缓,过冲电压幅值越大,并采用脉冲变压器二次侧均匀密绕、一次侧均匀疏绕、高匝数的方案进行优化。进一步分析了纯阻性、阻容性或阻感性负载特性对输出高压脉冲波形的影响规律,发现电阻值增大（5～50 kΩ）,过冲电压幅值增大,脉冲上升沿和下降沿变陡;当负载电阻回路串联小电容时,过冲电压幅值显著增大,而电容值高于一定值时输出脉冲波形恢复至与纯电阻波形一样;当负载电阻回路串联电感时,输出脉冲波形下降沿变平缓。     

A New Thiosemicarbazone-Based Fluorescence “Turn-on” Sensor for Zn<Superscript>2+</Superscript> Recognition with a Large Stokes Shift and its Application in Live Cell Imaging

Selective fluorescence turn on Zn²⁺ sensor with long-wavelength emission and a large Stokes shift is highly desirable in Zn²⁺ sensing area. We reported herein the synthesis and Zn²⁺ recognition properties of a new thiosemicarbazone-based fluorescent sensor L. L displays high selectivity and sensitivity toward Zn²⁺ over other metal ions in DMSO-H₂O (1:1, v/v, HEPES 10 mM, pH = 7.4) solution with a long-wavelength emission at 572 nm and a large Stokes shift of 222 nm. Confocal fluorescence microscopy experiments demonstrate that L is cell-permeable and capable of monitoring intracellular Zn²⁺.

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Graphical Abstract We report a new thiosemicarbazone-based fluorescent sensor (L) for selective recognition of Zn²⁺ with a long wavelength emission and a large Stokes shift.

     

反向响应过程抗负载干扰PID控制回路性能评估

反向响应过程广泛存在于化工领域中,但针对反向响应过程的性能评估研究较少。针对一类二阶时滞反向响应过程,通过幂级数展开的方法简化了对象模型,然后研究其抗负载干扰PID控制回路性能评估问题。根据DS-d控制原理获取期望闭环传递函数以及PID控制器参数,推导干扰模型为阶跃情况下的PID控制回路累积绝对误差(IAE)性能基准值,并将其推广到斜坡输入以及一般输入情形,为不同干扰类型情况下的反向响应过程建立通用化的IAE性能评价标准。仿真结果验证了所提性能评估算法的正确性以及通用性。     

高超声速可压缩流中粗糙壁热流研究

用计算流体力学（CFD）数值模拟和理论方法对高超声速可压缩湍流中粗糙壁面热增量进行研究. 着重考虑粗糙单元密度和粗糙单元形状对粗糙表面热流的影响. 结果表明： ①粗糙单元密度变化时, CFD数值方法计算所得的粗糙单元等效热流随着粗糙单元密度的降低而增加, 理论方法预测结果的规律随方法不同而不同;②在相同粗糙单元密度和高度时,如果粗糙单元形状改变,CFD计算结果也随之发生改变. 理论预测方法所得结果不发生变化.     

小波变换轮廓术的测量范围研究

利用小波“脊”处的小波系数来提取变形条纹中的相位信息可以在很大程度上抑制条纹图中有用的基频分量与零频和其它谐波频率分量的混叠,弥补了傅里叶变换轮廓术的不足。从离散信号频域分析角度,推导了变形条纹小波变换的频谱描述形式,讨论了其测量范围,包括结构条件和抽样条件。结果表明,只有在无周期内瞬时频谱混叠,即任意位置处物体瞬时高度变化满足h/xx=b<1/3条件时,和不存在抽样引起的周期间瞬时频谱混叠的抽样条件下(即一个周期内的抽样点数m≥4时),小波变换轮廓术才能正确恢复被测物体的三维面型。计算机模拟和实验验证了该结论。     

Study on nitridation processes of β-Ga2O3 single crystal

Nitridated /3-Ga2Os (100) substrate was investigated as the substrate for CaN epitaxial growth.The effects of nitridation temperature and surface roughness of -Ga2O3 wafers on the formation of CaN were studied.     

Controlling theoretically total absorption in hybrid-cavity resonator with one graphene monolayer outside cavity

Total absorption is realized theoretically in a graphene-outside-cavity resonator. The structure is composed of the FP-Fano hybrid resonance cavity. Changing the thickness of grating exciting Fano resonance, the absorption-mode number can be tuned effectively. For the focused double-mode absorption, the resonances behave insensitively with the variation of chemical potential of graphene. Varying the geometry of grating can control the coupling extent of two modes. Also, by manipulating the period number of two-side multilayers around graphene, the absorption, shift and number of modes are governed.     

SEM-EDXA分析不同生长应力木材细胞壁微区木质素沉积

选取具不同生长应力水平的人工林尾巨桉(Eucalyptus uroph ylla×E.grandis)正常木为研究对象,借助场发射环境扫描电子显微镜系统,结合以溴元素做标记的X射线能谱分析技术,分析了尾巨桉细胞壁微区木质素沉积与生长应力的关系.研究结果表明,木纤维细胞壁各微区间木质素含量的大小关系与生长应力高低无关,其...     

Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure

A p-ZnO:N/n-GaN:Si structure heterojunction light-emitting diode (LED) is fabricated on c-plane sapphire by full metal organic chemical vapor deposition (MOCVD) technique. The p-type layer with hole concentration of 8.94×10¹⁶ cm⁻³ is composed of nitrogen-doped ZnO using NH₃ as the doping source with subsequent annealing in N₂O plasma ambient. Silicon-doped GaN film with electron concentration of 1.15×10¹⁸ cm⁻³ is used as the n-type layer. Desirable rectifying behavior is observed from the current-voltage (I-V) curve of the device. The forward turn on voltage is about 4 V and the reverse breakdown voltage is more than 7 V. A distinct ultraviolet (UV) electroluminescence (EL) with a dominant emission peak centered at 390 nm is detected at room temperature from the heterojunction structure under forward bias conditions. The origins of the EL emissions are discussed in comparison with the photoluminescence (PL) spectra.