微裂纹扩展中的分形现象及其计算机仿真

本文探讨了采用仿真技术研究微裂纹连接过程和生成分形断口表面的可行性，发展了用于仿真微裂纹随机生长行为的ＧＯ模型的基本构相，并进行了计算机仿真实验，由此得出了一此有的结论。     

短脉冲载荷下金属材料的层裂破坏

 本文用点炮加载聚酯薄膜飞片撞击金属靶材料，飞片速度0.714~2.24 km/s，脉冲宽度40~80 ns，击靶压力为2.280~11.952 GPa。在回收的铝、铜和钢靶样品上观察到层裂现象。通过金相分析发现它们的破坏方式与在一般较长脉冲加载下的破坏方式相似，铝和铜以延性方式破坏；钢则以脆性方式破坏。一维和二维数值模拟结果表明通常的几种层裂判据在这个应力、应变和应变率范围内也基本上适用。     

“J—646”新型光学光敏胶胶合工艺简介

“J—646”光敏胶具有透光率好,收缩率小,粘接强度适中,耐老化,毒性小和成本低廉等特点。本文简要介绍了该胶的胶合工艺。     

Emission and sputtering characteristics of Ne-Ar mixed gas glow discharge plasmas.

The emission characteristics of several Cu lines emitted from a Ne-Ar mixed gas glow discharge plasma were investigated. The addition of small amounts of Ar to a Ne plasma increases the sputtering rate of a Cu sample because Ar ions, which work as the impinging ions for cathode sputtering, are predominantly produced through Penning ionization collisions between Ne metastables and Ar atoms. Ar addition also elevates the number density of electrons in the plasma. These changes occurring in the Ne-Ar mixed gas plasma result in enhanced emission intensities of the Cu lines. The Cu II 270.10-nm and the Cu II 224.70-nm lines yield different intensity dependence on the Ar partial pressure added. This phenomenon is because these Cu II lines are excited principally through different charge transfer processes: collisions with Ne ions for the Cu II 270.10-nm line and collisions with Ar ions for the Cu II 224.70-nm line. The shape of sputtered craters in the Ne-Ar glow discharge plasma was measured. The depth resolution was improved when Ar was added to a Ne plasma because the crater bottoms were flatter with larger Ar partial pressures.     

作业车间调度问题的改进混合遗传算法

作业车间调度是一类求解困难的组合优化问题,本文在考虑遗传算法早熟收敛问题和禁忌搜索法自适应优点的基础上,将遗传算法和禁忌搜索法相结合,提出了一种基于遗传和禁忌搜索的混合算法,并用实例对该算法进行了仿真研究.结果表明,该算法有很好的收敛精度,是可行的,与传统的算法相比较,有明显的优越性.     

CCD狭缝摄象

在过去的几十年中,各靶场已广泛应用狭缝摄影对种种飞行弹丸的多项重要技术参数进行测试,它在许多测试项目中应用的有效性、广泛性和经济性已被人们所肯定。据报道,在国外的一些靶场所进行的发射试验中,狭缝摄影机曾占全部测试设备中所使用的摄影仪器的百分之九十,这是因为狭缝摄影有其独特的、其它方法不可比拟的优点。     

光辅助超高真空CVD系统制备SiGe异质结双极晶体管研究

介绍了采用紫外光化学汽相淀积(UVCVD)、超高真空化学汽相淀积(UHVCVD)和超低压化学汽相淀积(ULPCVD)技术研制的化学汽相淀积(CVD)工艺系统,简称U³CVD系统.应用该系统,在450℃低温和10^-7Pa超高真空环境下研制出了硅锗(SiGe)材料和硅锗异质结双极晶体管(SiGe HBT)材料.实验表明,该系统制备的SiGe HBT材料性能良好.     

Simplified analytic solutions and a novel fast algorithm for Yb-doped double-clad fiber lasers

In this paper, continuous wave Yb³⁺-doped double-clad fiber lasers (DCFLs) with linear-cavity are investigated theoretically and numerically using the rate equations. Under the steady state conditions, the simplified analytic solutions of Yb³⁺-doped DCFLs under considering the scattering loss are deduced in the strongly pump condition. Compared with the known analytic solutions in published literatures, our analytic solutions are more accurate, especially, at higher reflectivity of output mirror. In addition, a fast and stable algorithm based on the Newton-Raphson method is proposed to simulate numerically Yb³⁺-doped DCFLs. The results by simplified analytic solutions are in good agreement with those by the numerical simulation. Moreover, we have performed the optimization of an Yb³⁺-doped DCFL using the simplified analytic solutions and the numerical simulations, respectively.