Analysis of the charge transfer mechanisms responsible for the current-voltage characteristics of Ca<Subscript>4</Subscript>Ga<Subscript>2</Subscript>S<Subscript>7</Subscript>: Eu<Superscript>3+</Superscript> single crystals

The current-voltage characteristics of Ca₄Ga₂S₇: Eu³⁺ single crystals are measured for the first time, and the processes affecting these characteristics are analyzed theoretically. It is demonstrated that Ca₄Ga₂S₇: Eu³⁺ single crystals are high-resistance semiconductors with a resistivity of ～10⁹ Ω cm and a relative permittivity of 10.55. The electrical properties of the studied materials are governed by traps with activation energies of 0.13 and 0.19 eV and a density ranging from 9.5×10¹⁴ to 2.7×10¹⁵ cm^?3. The one-carrier injection is observed in weak electric fields. In electric fields with a strength of more than 4×10³ V/cm, traps undergo thermal field ionization according to the Pool-Frenkel mechanism. At low temperatures and strong fields (160 K and 5×10⁴ V/cm), the electric current is most likely due to hopping conduction by charge carriers over local levels in the band gap in the vicinity of the Fermi level.     

The endogenous GABA analogue gamma-hydroxybutyric acid: Tritium labeling at high specific activity

2,3,4-³H] Gamma-hydroxybutyric acid (GHB, 4) was prepared by means of a catalytic tritium reduction of 2(5H)-furanone (2) followed by hydrolysis. It has proven useful as a tool to study the GHB receptor. This revised version was published online in July 2006 with corrections to the Cover Date.     

Dynamic stability of a spiral domain in an ac magnetic field

The dependence of the stability of a magnetic spiral domain in a film on the parameters of the film and its domain structure and on an external magnetic field is considered within a phenomenological model. The model allows one to explain a number of experimentally observed properties of dynamic spiral domains resulting from the process of self-organization of domains and domain walls in an iron-garnet film placed in an external ac magnetic field.     

Differentiation between tracks and damages in SSNTD under the atomic force microscope

We have observed three-dimensional sponge-like structures as well as strips of connecting pits on the surface of the LR 115 detector after etching, which can be confused with the small tracks formed after short etching time. We have employed an atomic force microscope (AFM) to study these “damages” as well as genuine alpha tracks for short etching time. It was found that while the track and damage openings could be similar in size and shape, the depths for the damages were consistently smaller. Therefore, the depth of the pits will serve as a clear criterion to differentiate between tracks and other damages. The ability to discriminate between genuine tracks from other damages is most important for etching for short time intervals.     

Semidomains and Metabelian Product of Metabelian Lie Algebras

This article is the fourth part of the series of papers whose aim is the construction of algebraic geometry over metabelian Lie algebras. __________ Translated from Sovremennaya Matematika i Ee Prilozheniya (Contemporary Mathematics and Its Applications), Vol. 14, Algebra, 2004.     

Effect of genesis on the properties and hydrogen reducibility of NiO-ZnO mixed oxides

The physico-chemical properties and reactivity tested by hydrogen reduction have been studied for two series of NiO-ZnO mixed oxides of various composition. The solid nickel oxide or zinc oxide in interaction with the solution of nitrate of the second component were used as the precursors in each series. The differences in some physico-chemical parameters of the samples in both series were correlated with their reduction behaviour, followed both in iso- and non-isothermal regime. Moreower, the influence of various factors modifying the reactivity of mixed oxides was also investigated and the results were compared with those obtained from earlier studied analogous systems of quite different origin.This revised version was published online in November 2005 with corrections to the Cover Date.