润滑油对压缩机壳体噪声辐射影响的数值分析

考虑了润滑油的存在对冰箱压缩机壳体噪声辐射的影响，运用流固耦合有限元方法，计算了不同润滑油量下壳体的耦合模态，以及壳体在单点激励下的远场辐射。数值分析结果发现：润滑油的存在对壳体的第5阶和第10阶固有频率影响比较大，随着油面高度的增加，第5阶和第10阶固有频率呈下降趋势；润滑油对壳体噪声辐射影响的主要频率范围在1000Hz-2000Hz，并且在此频率范围内，随着油面高度的升高，峰值频率向高频移动并且峰值逐渐增大。最后通过实验初步验证了该结诊的正确性．为冰箱压缩机的设计提供了参考依据。     

散射大气对脉冲紫外光传输时间特性研究

介绍基于椭球坐标系的单次散射近似模型基础上,定量分析脉冲紫外光在散射大气中传输特性,具体讨论了传输距离及能见度等因素对脉冲紫外光传输特性的影响。最后开展了脉冲紫外光展宽初步实验研究,其实验结果与单次近似结果符合较好,从而指导了紫外光信息传输系统的设计工作。     

Efficient Nanosecond Dual-Signal Optical Parametric Generator with a Periodically Phase Reversed PPMgLN

We report an efficient nanosecond optical parametric generator （OPG） with a periodically-phase-reversed periodically poled MgO：LINbO3 （ppr-PPMgLN）, which produces two pairs of signal and idler waves. The OPG is pumped by a 1.064μm Q-switched Nd：YVO4 laser. When the repetition rate is set at 10kHz, the maximum average total output power of 570mW is achieved, including 410mW of dual-signal radiations and 160mW of dual-idler radiations. The total conversion efficiency is 32.5%. The tunable dual-signal wavelengths in the range of 1.474-1.518μm and 1.490-1.539μm and the dual-idler of 3.826-3.558 μm and 3. 726-3.451 μm are obtained by changing the crystal temperature from 30℃ to 200℃.     

拉曼放大辅助波长可选择的全光开关

使用3-dB耦合器组成M-Z干涉仪,在M-Z干涉仪的一臂加入高非线性光纤(HNLF)组成的反向拉曼放大器,改变放大器的泵浦波长及强度,可实现波长可选择的全光开关。其功能可用于波分复用(WDM)系统,对不同波长的上、下载选择有很大的应用意义。理论分析了实现这一功能的可行性和参数选择,考虑拉曼放大并伴有交叉相位调制(XPM)引起信号光的相移,推导分析了在引入放大的同时又引入相移,怎样选择放大和相位匹配问题,来实现波长可选择的光开关的要求。     

极性晶体中极化子效应对界面强耦合激子性质的影响

在Huybrechts关于强耦合极化子的模型基础上,采用LLP变分法研究了极性晶体中激子与IO声子强耦合、与LO声子弱耦合体系的基态能量,推导出了激子的自陷能和诱生势的表达式,并以AgCl/AgBr晶体为例进行了数值计算,结果表明,激子的自陷能不仅与激子的坐标z有关,而且电子-空穴间距离ρ对激子自陷能的影响也十分显著;激子的诱生势不仅与电子-空穴间距离ρ有关,而且激子距离晶体界面的位置z对诱生势的影响也十分显著.     

Saturation of Photoassociation in Cs Magneto-optical Trap

An ultrahigh resolution photoassociation spectrum of caesium atoms in a magneto-optical trap is presented. Hyperfine structure of the excited state molecule is obtained by using the lock-in method based on modulated cold atoms in this spectrum. Amplitude of resonant lines related to the rotational levels increases with photoassociation laser intensity, and saturation effect of photoassociation of cold atoms is observed in our experiment. The saturation intensity of photoassociation is deduced by fitting the experimental data to asaturation model based on scattering theory. Differences among saturation intensities of different rotational progressions in the υ=55 vibrational state of the caesium molecular long-range 0_g^- state have been found.     

Polarization State Evolution in Fibre Polarization Transformer Influenced by Phase Difference

In accordance with the intrinsic structure of controllably-spun birefringent-fibre-based fibre polarization transformer （FPT）, the Jones vector is calculated from point to point along the polarization transforming fibre by the cascade differential phase retarder model. It is the first time using this concise method to examine the phasedifference effect on the evolution of state of polarization （SOP） inside this special fibre component. Both the extinction ratio and orientation angle of SOP are calculated to give out a whole evolution history from linear polarization light at the slow spun end into circular polarization light at the fast spun end, and vice versa. The influence of phase-difference is discussed on the polarization transforming performance and further referential conclusion is provided for design and test of the FPT component.     

Theoretical Analysis of Current Crowding Effect in Metal/AIGaN/GaN Schottky Diodes and Its Reduction by Using Polysilicon in Anode

There exists a current crowding effect in the anode of AIGaN/GaN heterojunction Schottky diodes, causing local overheating when working at high power density, and undermining their performance. The seriousness of this effect is illustrated by theoretical analysis. A method of reducing this effect is proposed by depositing a polysilicon layer on the Schottky barrier metal. The effectiveness of this method is provided through computer simulation. Power consumption of the polysilicon layer is also calculated and compared to that of the Schottky junction to ensure the applicability of this method.     

Effect of Ⅲ/Ⅴ Ratio of HT-AIN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy

We investigate the effect of A/N ratio of the high temperature （HT） AIN buffer layer on polarity selection and electrical quality of GaN films grown by radio frequency molecular beam epitaxy. The results show that low Al/N ratio results in N-polarity GaN films and intermediate Al/N ratio leads to mixed-polarity GaN films with poor electrical quality. GaN films tend to grow with Ga polarity on Al-rich AIN buffer layers. GaN films with different polarities are confirmed by in-situ reflection high-energy electron diffraction during the growth process. Wet chemical etching, together with atomic force microscopy, also proves the polarity assignments. The optimum value for room-temperature Hall mobility of the Ga-polarity GaN film is 703cm^2/V.s, which is superior to the N-polarity and mixed-polarity GaN films.