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971.
Photomasks are the backbone of microfabrication industries. Currently they are fabricated by a lithographic process, which is very expensive and time consuming since it is a multi-step process. These issues can be addressed by fabricating photomasks by direct femtosecond laser writing, which is a single-step process and comparatively cheaper and faster than lithography. In this paper we discuss our investigations on the effect of two types of laser writing techniques, namely front- and rear-side laser writing, with regard to the feature size and the edge quality of a feature. It is proved conclusively that for the patterning of masks, front-side laser writing is a better technique than rear-side laser writing with regard to smaller feature size and better edge quality. Moreover the energy required for front-side laser writing is considerably lower than that for rear-side laser writing. Received: 22 May 2001 / Accepted: 14 September 2001 / Published online: 17 October 2001  相似文献   
972.
Numerical experiments showed that the number-of-bonds distribution of particles that form a fairly large molten argon-like cluster was bimodal. This result was interpreted as a consequence of the formation of two “phases, ” namely, particles inside the cluster and a monolayer of particles lying above the others. Particle chains were shown to be formed near the surface of the cluster. Splitting off of separate particles from them was the most probable mechanism of vaporization. Model concepts that described the dependences observed in numerical experiments were developed.  相似文献   
973.
974.
The disintegration of bromhexin tablets was monitored by magnetic resonance imaging. The fast imaging method FLASH with spoiling gradients was used to obtain images of the tablets in short time intervals. The rate of the disintegration depends on the preparation method, kind and percentage of the carrier (polyethylene glycol, lactose). Solid dispersion with slow evaporation of solvent yields materials with decreased dissolution rate. Increasing molecular mass of polyethylene glycol and its percentage content also hampers disintegration.  相似文献   
975.
Nuclei in the neutron-rich Ni region have been studied by γ-ray spectroscopy. Gamma-rays emitted from isomers, with T 1/2 > 1 ns, produced in heavy-ion deep-inelastic collisions were measured with an isomer-scope. The nuclear structure of the doubly magic 68Ni and its neighbor 69,71Cu is discussed on the basis of the shell model. Future experiments for more neutron-rich Ni nuclei are also viewed. Received: 1 May 2001 / Accepted: 4 December 2001  相似文献   
976.
Understanding of the basic nature of arc root fluctuation is still one of the unsolved problems in thermal arc plasma physics. It has direct impact on myriads of thermal plasma applications being implemented at present. Recently, chaotic nature of arc root behavior has been reported through the analysis of voltages, acoustic and optical signals which are generated from a hollow copper electrode arc plasma torch. In this paper we present details of computations involved in the estimation process of various dynamic properties and show how they reflect chaotic behavior of arc root in the system.  相似文献   
977.
An effective residual interaction between particles and holes for shell model calculations around 208Pb, derived from the interaction between free nucleons, is compared with the measured properties of proton-hole neutron states in 208Tl and the interaction between proton holes is adjusted to newly measured level energies in 206Hg. These interaction elements are particularly relevant for neutron-rich nuclei. The adjustment of two mixing elements reproduces the known γ-decay data in 208Tl. Received: 2 April 2002 / Accepted: 2 May 2002  相似文献   
978.
The element distributions and the magnetic ordering behaviour of compounds RNi10Si2 (R = Tb, Dy, Ho, Er, Tm) have been studied by neutron powder diffraction down to temperatures of 1.6 K. The compounds crystallize in an ordered variant of the ThMn12 structure type in the tetragonal space group P4/nmm. An ordered 1:1 distribution of Ni and Si on sites 4d and 4e, respectively, corresponds to a modulation vector [0, 0, 1] with respect to the space group I4/mmm of the ThMn12 structure. TbNi10Si2 orders antiferromagnetically below T N = 4.5 K with a magnetic propagation vector of [0, 0, 1/2]. The magnetic Tb moments, 8.97(2) /Tb atom at 1.6 K, are aligned along the c-axis. The Ni sites in TbNi10Si2 do not carry any ordered magnetic moments. The compounds with R = Dy, Ho, Er, and Tm are paramagnetic down to 1.6 K and 3.0 K, respectively. Received 10 July 2002 / Received in final form 12 September 2002 Published online 29 October 2002  相似文献   
979.
In the periodic orbit quantization of physical systems, usually only the leading-order ? contribution to the density of states is considered. Therefore, by construction, the eigenvalues following from semiclassical trace formulae generally agree with the exact quantum ones only to lowest order of ?. In different theoretical work the trace formulae have been extended to higher orders of ?. The problem remains, however, how to actually calculate eigenvalues from the extended trace formulae since, even with ? corrections included, the periodic orbit sums still do not converge in the physical domain. For lowest-order semiclassical trace formulae the convergence problem can be elegantly, and universally, circumvented by application of the technique of harmonic inversion. In this paper we show how, for general scaling chaotic systems, also higher-order ? corrections to the Gutzwiller formula can be included in the harmonic inversion scheme, and demonstrate that corrected semiclassical eigenvalues can be calculated despite the convergence problem. The method is applied to the open three-disk scattering system, as a prototype of a chaotic system. Received 10 September 2001 and Received in final form 3 January 2002  相似文献   
980.
Experimental proofs of asymmetric trapping of atoms at the growth step in vapor-phase epitaxy of gallium arsenide in the GaAs–AsCl3–H2 system are given. The data obtained confirm the important role of the surface diffusion mass transfer in the growth of epitaxial GaAs layers on vicinals in the neighborhood of (111)A. The effective diffusion length is estimated.  相似文献   
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