Chilling resistances of isolates of Pythium ultimum var. ultimum from the Arctic and Temperate Zones

Chilling resistances in moss pathogenic fungi, Pythium ultimum var. ultimum, from Longyearbyen, Svalbard (78 degree N, 15 degree E), located in the Arctic Zone and in the same isolates from Temperate Zone, were determined. Both strains had similar optimum growth temperatures. However, the strains from Svalbard could grow and survive at 0 - 5 degrees C. In addition, chilling treatment induced irregular mycelial morphology in the Arctic isolates. On the other hand, the isolates from Japan did not grow at temperatures below 5C and were destroyed after chilling stress (0 degree C for 3 days or at 4 degrees C for 1 week). The results suggested that isolates from Svalbard highly adapted to the severe spring condition in Polar environments.     

Local chemical state change in Co–O resistance random access memory

Kelvin probe force microscopy (KFM) and conductive atomic force microscopy (C‐AFM) together with micro X‐ray photoelectron spectroscopy (XPS) were performed for the stacking structure comprising of the transition metal oxide Co–O and metal electrode, which exhibits large reproducible resistance switching. The application of the external voltage by the C‐AFM cantilever decreases the resistance of Co–O, which well accords with the non‐polar forming process observed in the Pt/Co–O/Pt trilayer, known as the candidate of resistance random access memory (ReRAM). Furthermore, the KFM and micro XPS experimentally revealed that the local reductive reaction of Co–O possibly nucleates the defect related energy levels which dominates the current conduction in the low resistance state. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A versatile route to silylsubstituted ketones by rhodium catalyzed isomerization of silylated allyl alcohols

The rhodium catalyzed isomerization of α-, β-, and γ-silylated allyl alcohols has been successfully applied to the selective synthesis of acylsilane, α-silyl ketones, and β-silyl ketones, respectively.     

Meeting announcement

Diffusion and solution behavior of methanol vapor in two diblock copolymers, poly(2-vinylpyridine)—block—polyisoprene [P(2VPbI)] and poly(2-vinylpyridine)—block—polystyrene [P(2VPbS)], was studied by the weighing method at 25°C. The domain structure of films of both copolymers showed an alternating lamellar arrangement. Methanol is a good solvent for P2VP, but a nonsolvent for PI and PS. Methanol dissolved exclusively in the P2VP phase of the copolymers. For both copolymer systems, absorption and desorption processes of non-Fickian type were observed as characterized by a thickness anomaly. However, the magnitude of the deviations from purely Fickian behavior was small, and the integral diffusion coefficient, D?, was obtainable with reasonable accuracy. At low and medium concentrations, D? for P(2VPbI) was greater, by about one order of magnitude, than that for P2VP, while D? for P(2VPbS) was lower than that for P2VP. A similar trend was observed in plots of the permeability coefficient against the vapor pressure of methanol. The results indicate that the rubbery PI phase may facilitate the transport of penetrant molecules in the P(2VPbI) film. On the other hand, the glassy PS phase in the P(2VPbS) film merely interferes with the transport of methanol molecules.     

Observation of the Fano-Kondo antiresonance in a quantum wire with a side-coupled quantum dot

We have observed the Fano-Kondo antiresonance in a quantum wire with a side-coupled quantum dot. In a weak coupling regime, dips due to the Fano effect appeared. As the coupling strength increased, conductance in the regions between the dips decreased alternately. From the temperature dependence and the response to the magnetic field, we conclude that the conductance reduction is due to the Fano-Kondo antiresonance. At a Kondo valley with the Fano parameter q approximately 0, the phase shift is locked to pi/2 against the gate voltage when the system is close to the unitary limit in agreement with theoretical predictions by Gerland et al. [Phys. Rev. Lett. 84, 3710 (2000)].     

Observation of "partial coherence" in an Aharonov-Bohm interferometer with a quantum dot

We report experiments on the interference through spin states of electrons in a quantum dot (QD) embedded in an Aharonov-Bohm (AB) interferometer. We have picked up a spin-pair state, for which the environmental conditions are ideally similar. The AB amplitude is traced in a range of gate voltage that covers the pair. The behavior of the asymmetry in the amplitude around the two Coulomb peaks agrees with the theoretical prediction that the spin-flip process in a QD is related to the quantum dephasing of electrons. These results constitute evidence of "partial coherence" due to an entanglement of spins in the QD and in the interferometer.