Conformational Transmission in DNA

Abstract

This poster presents our recent results on DNA dimers in which a stable trigonal bipyramidal pentacoordinated phosphorus (P^v) structure forms the internucleoside linkage. Conformational analysis of the systems 1-4 with 300 and 500 ¹H NMR has shown that the P^v structure results in a distorted conformation of the backbone structuE (1).     

Atom lithography without laser cooling

Using direct-write atom lithography, Fe nanolines are deposited with a pitch of 186 nm, a full width at half maximum (FWHM) of 50 nm, and a height of up to 6 nm. These values are achieved by relying on geometrical collimation of the atomic beam, thus without using laser collimation techniques. This opens the way for applying direct-write atom lithography to a wide variety of elements.     

Current-temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium

Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively evaporated onto Ge (1 1 1) that was ICP etched at a rate of 60 Å per minute for three or ten minute intervals. Although plasma cleaning is known to introduce defects that were observed with DLTS, the diodes exhibited excellent current-voltage characteristics when cooled down to 80 K. Current-temperature (IT) scans that were recorded from 20 K up to 300 K after cooling under reverse bias showed no effect of recombination/generation (RG). On the other hand, IT scans that were recorded after cooling under zero or forward bias clearly exhibited RG effects in the 100-240 K temperature range. This effect was found to be completely reversible. In addition, ICP etching leads to superior devices when compared to devices manufactured by RF sputter deposition.