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21.
Longitudinal-field muon-spin depolarization rates in high-purityGe and semiinsulatingGaAs are reported and compared to similar data for intrinsicSi. Depolarization onset temperatures provide a comparison of charge carrier concentrations leading to rapid charge exchange and a shift in the onset, for n-typeGaAs verifies anelectron process. The temperature dependence of the low-field rate constants imply more complicated dynamics inGe than observed earlier inSi. Features near 750K inGaAsTe appear consistent with dissociation of aMu-Te pair.This work was supported by the US National Science Foundation (DMR-8917639 [TLE, BH]), the Science and Engineering Research Council of the UK (EAD, AS, SFJC), the Robert A. Welch Foundation (D-1053 [RLL], and C-1048 [TLE]), and a NATO Collaborative Research Grant (RLL, SFJC, RCD, CS). We wish to thank D.A. Vanderwater of Hewlett Packard for providing theGaAsTe sample.  相似文献   
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The radio frequencySR technique developed at TRIUMF was used to measure the temperature dependence of the diamagnetic muon, Mu, and Mu* amplitudes in silicon between 10 K and 500 K. Six samples doped with phosphorus (n-type) and boron (p-type) in the concentration range 1011 to 1015 cm–3 were studied. In pure Si a very good fit over the whole temperature range is obtained from a model that includes the ionization of Mu* and Mu to a bond centered + followed at high temperature by charge exchange involving Mu.  相似文献   
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The electric quadrupole interaction of55Mn nuclei was studied in the weakly ferromagnetic system MnSi using muon level-crossing resonance (LCR) technique. The temperature dependence of the electric field gradient (EFG) shows a critical behavior near the ferromagnetic transition temperature, indicating that the EFG due to the conduction electron is strongly correlated with the magnetic susceptibility in the itinerant electron magnetism. The temperature dependence of EFG is in reasonable agreement with the self-consistent renormalization theory developed by Moriya and coworkers.We gratefully acknowledge helpful discussion with Dr. N. Nishida. We also wish to thank Keith Hoyle and Curtis Ballard for technical support.  相似文献   
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The dynamics described by a system of reaction-diffusion equations with a nonlinear potential exhibits complicated spatial patterns. These patterns emerge from preservation of homotopy classes of solutions with bounded energies. Chaotically arranged stable patterns exist because of realizability of all elements of a fundamental homotopy group of a fixed degree. This group corresponds to level sets of the potential. The estimates of homotopy complexity of attractors are obtained in terms of geometric characteristics of the potential and other data of the problem.

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Summary The Food and Drug Administration (FDA) has regulatory responsibility for radionuclides in foods and radiopharmaceuticals and must maintain an ongoing Quality Assurance Program. These Quality Control Programs involve the U.S. Environmental Protection Agency (EPA) [1, 2] and the National Institute of Standards and Technology (NIST) [3], who supply the necessary reference materials and standards to ensure that the measurements are accurate and reproduceable. Data from EPA (1987 to 1991) and from a NIST Blind Source study (1985 to 1991) show the results are accurate with an average variation from NIST values of 1.8% [4–10]. The use of standard materials with the same matrices as the samples being analyzed provides credibility to the measurements.  相似文献   
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For a stochastic matrix (Q ij T ) i,j=1 M withQ ij T exp(–U(ij)/T) at the off-diagonal positions, we develop an algorithm to evaluate the asymptotic convergence rate of all eigenvalues ofQ ij T asT 0 using Ventcel's optimal graphs. As an application we can compare the convergence rates of some random updating schemes used in image processing.This research was partially supported by the National Science Council, Taiwan and Air Force Office of Scientific Research Contract No. F49620 S5C 0144, and was completed while Tzuu-Shuh Chiang was visiting the Center for Stochastic Processes, Department of Statistics, University of North Carolina, Chapel Hill, NC 27599-3260, USA.  相似文献   
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