Interaction Mechanisms Between Ar–O<Subscript>2</Subscript> Post-Discharge and Stearic Acid I: Behaviour of Thin Films

We study the interaction of thick films (~4 mm) of stearic acid (SA), a C₁₈ alkane skeleton with an acid function, with late Ar–O₂ post-discharge. Contrary to what is observed with thin films of SA (~2–3 μm) which are efficiently etched (part I), only functionalization is observed over the first 2 h of treatment with a plasma source operated in the continuous mode, whatever the temperature. The heat released by surface reactions affects non-linearly the temperature of the substrate. Pulsing the source at a frequency ranging from 0.1 to 1 kHz slows down the functionalization process but does not allow any etching of the material. On the contrary, the SA can be etched as thick films by pulsing the oxygen flow rate at a frequency below 50 mHz. By pulsing the reactive gas, the time averaged value of the [O]/[O₂] ratio is decreased, limiting the functionalization processes due to oxygen atoms, and the mean temperature is lowered, decreasing the diffusion length of O₂ (and/or possibly O₂*) species in the SA which are responsible for the scission of C–C bonds of radicals.