The Witt ring of a Brauer–Severi variety

For a Brauer–Severi variety X over a field k of characteristic not two, every symmetric bilinear space over X up to Witt equivalence is defined over k. Received: 2 February 1998     

Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser

A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N₂O and SiH₄, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO _x films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase.     

Luttinger liquid with asymmetric dispersion

We present an extension of the Tomonaga-Luttinger model in which left and right-moving particles have different Fermi velocities. We derive expressions for one-particle Green's functions, momentum-distributions, density of states, charge compressibility and conductivity as functions of both the velocity difference ε and the strength of the interaction β. This allows us to identify a novel restricted region in the parameter space in which the system keeps the main features of a Luttinger liquid but with an unusual behavior of the density of states and the static charge compressibility κ. In particular κ diverges on the boundary of the restricted region, indicating the occurrence of a phase transition. Received 20 May 2002 / Received in final form 23 August 2002 Published online 19 November 2002     

A branching process model for sand avalanches

An analytically solvable model for sand avalanches of noninteracting grains of sand, based on the Chapman-Kolmogorov equations, is presented. For a single avalanche, distributions of lifetimes, sizes of overflows and avalanches, and correlation functions are calculated. Some of these are exponentials, some are power laws. Spatially homogeneous distributions of avalanches are also studied. Computer simulations of avalanches of interacting grains of sand are compared to the solutions to the Chapman-Kolmogorov equations. We find that within the range of parameters explored in the simulation, the approximation of noninteracting grains of sand is a good one.     

Singular terms of helicity amplitudes at one loop in QCD and the soft limit of the cross sections of multi-parton processes

We describe a general method that enables us to obtain all the singular terms of helicity amplitudes of n-parton processes at one loop. The algorithm uses helicity amplitudes at tree level and simple color algebra. We illustrate the method by calculating the singular part of the one-loop helicity amplitudes of all 2 → 3 parton subprocesses. The results are used to derive the soft gluon limit of the cross sections of all 2 → 4 parton scattering subprocesses which provide a useful initial condition for the angular ordering approximation to coherent multiple soft gluon emission, incorporated in existing Monte Carlo simulation programs.     

Chopped CW laser-induced optogalvanic effect in a neon hollow cathode discharge

A detailed model for the optogalvanic effect in a neon hollow cathode discharge irradiated by a chopped CW dye laser is presented. A rate equation formalism is used to calculate the evolution of the first and second electronic configuration populations coupled by the laser and of the electric charges number density. Processes as ambipolar-like electrons loss, electronic collisional coupling of level populations and electron emission by the cathode due to VUV radiation from the 1s ₂ resonant level are taken into account and further discussed.The transients and steady-state magnitude of the optogalvanic signal are calculated, compared with experimental data and related to population changes. We predict sign changes of the optogalvanic signal when the laser is tuned over transitions originating from the resonant level with respect to transitions involving the metastables states. The optogalvanic signal is shown to be basically determined by the laser-induced variations of the excited-state populations while changes in the electron temperature, due to laser energy transfer by collisions between electrons and excited atoms, play a negligible role.     

The first ruthenium-alkyne-dihydride reported is now recognized as an intermediate in the homogeneous hydrogenation of diphenylacetylene: Crystal structure of (μ-H)2Ru3(CO)9(μ3-η2-∥-C2Ph2)

The title complex (complex1) was the first alkyne-substituted triruthenium dihydrido cluster to be reported and was characterized by spectroscopy as a triangular cluster with the alkyne parallel to a Ru-Ru edge. Recently, we have found that1 is a key intermediate in the homogeneous hydrogenation of diphenylacetylene catalyzed by tetrahedral Ru₄ and FeRu₃ clusters. Since the discovery of1, a great number of complexes with alkynes parallel to a cluster edge have been reported; at present this is the more common bonding mode for alkynes on trinuclear clusters. The structural features of1 allow a comparison with those of other ruthenium-containing derivatives and help to draw suggestions of the role of1 in hydrogenation catalysis.