首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   127篇
  免费   4篇
  国内免费   1篇
化学   77篇
晶体学   2篇
数学   35篇
物理学   18篇
  2022年   4篇
  2021年   1篇
  2020年   5篇
  2019年   3篇
  2018年   3篇
  2017年   1篇
  2016年   6篇
  2014年   1篇
  2013年   11篇
  2012年   6篇
  2011年   6篇
  2010年   4篇
  2009年   3篇
  2008年   10篇
  2007年   2篇
  2006年   3篇
  2005年   8篇
  2004年   5篇
  2003年   6篇
  2002年   7篇
  2001年   4篇
  2000年   3篇
  1999年   5篇
  1998年   2篇
  1997年   1篇
  1996年   2篇
  1995年   3篇
  1994年   1篇
  1993年   3篇
  1991年   1篇
  1989年   2篇
  1988年   3篇
  1986年   1篇
  1984年   1篇
  1981年   2篇
  1968年   1篇
  1967年   1篇
  1966年   1篇
排序方式: 共有132条查询结果,搜索用时 15 毫秒
131.
The Raman (3200‐30 cm−1) and/or infrared spectra (3500 to 400 cm−1) of gaseous, liquid and solid dimethylsilylisocyanate, (CH3)2 Si(H)NCO, have been recorded. The MP2(full) calculations, employing a variety of basis sets with and without diffusion functions, have been used to predict the structural parameters, conformational stability, vibrational fundamental wavenumbers, Raman activities, depolarization values and infrared intensities to support the vibrational assignment. The low wavenumber Raman spectrum of the gas with a significant number of Q‐branches for the SiNC(O) bend is consistent with an essentially linear SiNCO moiety. The ab initio calculations supported this conclusion as all possible orientations of the NCO moiety lead to nearly the same energy. This result is at variance with the conclusion from the electron diffraction study that the heavy atom skeleton was bent with an angle of 152(5)° with one stable cis conformer. It is believed that this reported angle difference from 180° is due to the shrinkage effect. The SiH distance of 1.486 Å has been obtained from the isolated SiH stretching wavenumber. From the adjustment of the ab initio MP2(full)/6‐311+G(d,p) predicted structural parameters, a proposed structure is reported, which is expected to give rotational constants within a few megahertz of the actual ones. These experimental and theoretical results are compared with the corresponding quantities of similar molecules. Copyright © 2009 John Wiley & Sons, Ltd.  相似文献   
132.
The infrared (3200 to 400 cm–1) spectra of gaseous and solid and Raman (3200 to 20 cm–1) spectra of liquid and solid ethyl chlorosilane-Si-d2, CH3CH2SiD2Cl, have been recorded. Both the gauche and trans conformers have been identified in the fluid phases, but only the gauche conformer remains in the solid phase. Variable temperature (–105 to –150°C) studies of the infrared spectra of CH3CH2SiH2Cl dissolved in liquid krypton have been carried out. From these data, the enthalpy difference has been determined to be 78±11 cm–1 (0.93±0.13 kJ/mol), with the gauche conformer the more stable form. Utilizing the frequencies of the silicon-hydrogen stretches, from the chlorosilane-Si-d isotopomer, Si—H bond distances of 1.481 and 1.480 Å have been obtained for the gauche conformer and 1.481 Å for the trans conformer. Complete vibrational assignments are proposed for both isotopomers which are consistent with the predicted frequencies utilizing the force constants from ab initio MP2/6-31G(d) calculations. Both the infrared intensities and the Raman activities and depolarization values have been obtained from the ab initio calculations. Complete equilibrium geometries have been determined by ab initio calculations employing the 6-31(d), 6-311++G(d,p), and 6-311+G(2d,2p) basis sets with full electron correlation by the Moller–Plesset (MP) perturbation method to second order. Continuing the previously reported rotational constants from five different isotopomers and the ab initio predicted structural parameters, adjusted r 0 parameters have been calculated, which are compared to the corresponding r s parameters. The results are discussed and the theoretical values are compared to the experimental values when appropriate.Taken in part from the dissertation of Y. E. Nashed, which will be submitted to the Department of Chemistry in partial fulfillment of the Ph.D. degree  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号