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71.
通过引进基态关联和同位旋自由度的区分,推广了Brueckner-Hartree-Fock理论方法,并应用于同位旋非对称核物质,系统地研究了在整个同位素旋自由度范围内核物质的状态方程和单粒子特征及其内位旋效应。还研究了微量三体核力对同位旋非对称核物质性质及同位旋效应的影响,定量讨论了三体力效应与相对论性平均场理论及Dirac-Brueckner方法的联系,主要给出了同位旋相关的Breckner-Hartree-Fock方法的基本理论和计算公式。 相似文献
72.
73.
By taking into account all the irreducible representations and their components in the electron-phonon interaction (EPI) as well as all the levels and the admixtures of basic wavefunctions within d^3 electronic configuration,the values of all the parameters in the expressions of thermal shift (TS) and thermal broadening (TB) due to EPI for the ground level,R level and R line of MgO:Cr^3 have microscopically been evaluated;and then,TS and TB of R line and various contributions to them have uniformly been calculated.The results are in very good agreement with the experimental data.It is found that all the three terms of TS due to EPI are red shifts;the Raman term is the largest one,and the optical-branch term and neighbor-level term are important for TS;the contribution to TS from thermal expansion is blue shift,which is also important.The R-line TS of MgO:Cr^3 comes from the first-order term of EPI.The elastic Raman scattering of acoustic phonons plays a dominant role in R-line TB of MgO:Cr^3 .For both TS and TB,it is very important to take into account all the admixtures of basic wavefunctions within d^3 electronic configuration. 相似文献
74.
Analytical Solution for Single—Mode Time—Dependent Oscillator 总被引:1,自引:0,他引:1
Based on the general theory of time-dependent quantum transformation,we use the “time evolution operator” method to solve the single-mode time-dependent oscillator. 相似文献
75.
A unified model of magnetic extraction of spin energy from a black hole in discussed based on the theory of black hole magnetosphere.The magnetic extracting power is expressed by a unified formula,which is applicable to bloth the Blandford-Znajek (BZ) process and the magnetic coupling (MC) process.The strength and characteristics of the BZ power and the MC power are compared in detail.In addition,the impedance matching condition for the BZ power is extended to the more general case. 相似文献
76.
Influence of Ba^2+ and Pb^2+ Ions on the Raman Dominating Active Vibronic Mode in Strontium Nitrate Crystals 下载免费PDF全文
The compositions of Sr(NO3)2 crystals grown from an aqueous solution doped with Ba^2 and Pb^2 were characterized by the electron probe microanalysis technique.It was found that Ba^2 is enriched in {100} sectors and Pb^2 in {111} sectors.The Raman spectra of different parts of these crystals at room temperature in the ranges of 1038-1070cm^-1 and 650-1150cm^-1 were investigated.The results indicated that barium and lead shift the Raman dominating peaks to the lower frequency and broaden the full width at half maximum.Furthermore,barium probably degrades the properties of the Sr(NO3)2 Raman shifter while lead is anticipated to improve it. 相似文献
77.
The hydrogenation properties of Zr samples with and without an Ni overlayer under various plasma conditions were investigated by means of non-Rutherford backscattering and elastic recoil detection analysis.The theoretical maximum hydrogen capacity,66.7 at%,could be achieved at a hydrogen absolute pressure of-2Pa and a substrate temperature of-393K for a plasma irradiation of only 10min;this was significantly greater than that for gas hydrogenation under the same hydrogen pressure and substrate temperature.It was also found that the C and O contamination on the sample surface strongly influences the hydrogenation,and that the maximum equilibrium hydrogen content drops dramatically with the increasing total contamination.In addition,the influence of the Ni overlayer on the plasma hydrogenation is discussed. 相似文献
78.
Contactless electroreflectance has been employed at room temperature to study the Fermi level pinning at undoped-n^ GaAs surfaces covered by 1.6 and 1.8 monolayer (ML) InAs quantum dots (QDs).It is shown that the 1.8 ML InAs QD moves the Fermi level at GaAs surface to the valence band maximum by about 70 meV compared to bare GaAs,whereas 1.6 ML InAs on GaAs does not modify the Fermi level.It is confirmed that the modification of the 1.8 ML InAs deposition on the Fermi Level at GaAs surface is due to the QDs,which are surrounded by some oxidized InAs facets,rather than the wetting layer. 相似文献
79.
Due to interaction with the vacuum of the radiation field,near-degenerate lower levels in a Λ system have an additional coherence term,the spontaneously generated coherence (SGC) term.For such a system,we investigate the effect of the relative phase between two coherent fields on the inversionless gain in the presence of the SGC.We find that the inversionless gain,which stems from both SGC and dynamically induced coherence,can be modulated by the relative phase. 相似文献
80.
We study the nonlinear solitary wave solution under the transverse perturbations for a system of coupled nonlinear electrical transmission lines.In the continuum limit and suitably scaled coordinates,the voltage on the system is described by a modified Zakharov-Kuznetsov equation.The cut-off frequency of the growth rate for the solitary waves under transverse perturbations has been analytically obtained.It is in agreement with the cases P=1/2 and p=1 which have been studied previously. 相似文献