类锂离子O%5＋的电子碰撞电离

此文采用扭曲库仑波函数描述碰撞电子，用Ｒ─矩阵密耦波函数处理被电离电子与剩余离子构成的系统初末态，在库仑玻恩各级近似下计算了类锂离子Ｏ５＋的电子碰撞电离截面及相应速率系数，这是文献中首次使用密耦方法，在考虑通道相互作用情形下得到的结果。     

基于平行活动围道模型的高分辨率遥感影像城区主干道路段提取

为了提取并表示高分辨率遥感影像中的主干道路段,提出了一种多分辨框架下的平行活动围道模型的算法.该算法在活动围道模型原理的基础上,重新定义各能量项:采用抛物线做为道路段的先验模型,增加了平行性能量,并采用多分辨框架下的梯度做为外部能量.该模型的优化过程实现了道路的定位,得到的结果是平行抛物线的参数,实现了道路的矢量表示.实验结果表明,能有效提取高分辨率遥感影像中的主干道路段.     

CsI（TI）晶体中反冲Cs和I核Quenching Factor的测量

许多实验对用CsI(Tl)闪烁晶体作为探测器来寻找和探测暗物质的可行性进行了研究。本工作利用8MeV单能中子轰击CsI(Tl)晶体探测器来研究Cs核和I核的Quenching Factor。在数据处理中，运用脉冲形状甄别（PSD）方法来分辨反冲核信号和本底信号。实验结果表明，在7keV到132keV的能区中，Quenching Factor随着反冲核能量的减少而增加。在探测暗物质的实验中，这一性质对于CsI(Tl)晶体探测器获得较低的能量阈值是很有利的。     

声光可调谐波波器多波长同时滤波的特性

集成光声光可调谐滤波器（AOFT）有很多优点，特别是它可以同时滤出多个滤长，因此在波分复用（WDM）光纤通信网络中有重要应用。针对其这种特性，运用耦合模理论，导出了同时存在两束声波时的严格的耦合模方程，在此基础上，得到滤波特性的数值解，分析了多波长同时运用时，滤波器的主峰强度，中心波长和3dB带宽随时间的波动，同时也分析了当信道间隔较小时滤波特性失真严重，噪声较高的原因，在分析了共线型声光可调谐滤波器多波长同时运用所存在缺点的基础上，提出利用准共线模转换器来改善声光可调谐滤波器多波长同时运用的性能。     

Modification of a YBa2Cu3O7—δ Thin Film Using an Atomic Force Microscope

A YBa2Cu3O7-δ thin film is modified by a probe electric field of an atomic force microscope to form a ridge with the width of only a grain cell.The modification varies with the operation parameters of the bias voltage,the moving velocity of the probe and the ambient humidity.Energy dispersive spectroscopy analysis shows only oxygen deficiency in the modified YBCO thin film.As a result,the suppressed superconductivity was found in the junction crossing the ridge.     

Asymptotic Analysis of a Modified Lorenz System

We investigate the dynamical behaviour of a modified Lorenz system.Some basic dynamical properties,such as bifurcations,routes to chaos,periodic windows,and some Poincare mappings of this system are studied,either analytically or numerically.Also,the compound structure of the butterfly-shaped attractor is explored.     

Carrier Transport Behaviour of Molecular Doped Poly（N—Vinylcabozole）in Polymer Light—Emitting Diodes

Single-layer polymer light-emitting diodes are prepared from blends of poly(N-vinylcarbozole)(PVK) doped with tris(8-hydroxy-quinoline)aluminium(Alq3) of 2wt%(sample a)and 0.2wt%(sample b).The onset of PVK transient electroluminescence(EL) is delayed with respect to that of Alq3 in sample a under pulsed excitation,while the EL onsets of Alq3 and PVK in sample b are simultaneous.The total carrier mobility of the Alq3-rich regions in sample a is larger than that of the PVK-rich regions.However,the total carrier mobility is homogeneous in sample b.the phase image of atomic force microscopy and photoluminescence spectra of samples a and b indicate that the separated phase of samples a and b exists in the PVK-rich and Alq3-rich regions.The variance of the doping concentration and separated phase in blends results in the different carrier transport mobility of Alq3-rich and PVK-rich regions.     

用数码相机实现未琅禾费衍射测量细丝直径

介绍利用激光获得丝夫琅禾费衍射图样，并采用数码相机实现计算机辅助非接触自动测量细丝直径的方法，以及将其用于设计性实验的尝试。     

Si1Sb2Te3 phase change material for chalcogenide random access memory

This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.