Photoelectric characteristics of silicon P–N junction with nanopillar texture:Analysis of X-ray photoelectron spectroscopy

Silicon nanopillars are fabricated by inductively coupled plasma(ICP) dry etching with the cesium chloride(CsCl)islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus(P) diffusion by liquid dopant source(POCl3) at 870℃ to form P–N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy(XPS) is used to measure the Si 2p core levels of P–N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P–N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light.The energy shift of the Si 2p core level is-0.27 eV for the planar P–N junction and-0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.     

维吾尔文屏幕取词关键技术及其实现方法

研究了维吾尔文的书写特点．实现维文动态翻译技术的难点、根据维吾尔文的特征．创建了不等宽度不等长代码处理技术，屏幕取词．全屏翻译的关键技术来实现了维吾尔文动态翻译，井给出了实现其关键模块功能的程序流程图．     

489B束线低能分支的性能改进

分析了北京同步辐射实验室489B原束线低能分支的构造及弊病，在不影响束线高能分支性能及总体机械结构的基础上提出了改进方案，详细介绍了该设计方案和光束线调试工作及出光后束线的性能测试工作，该测试结果完全符合束线的设计，该束线在同步辐射专用光实验中充分发挥了改进后的优势，取得了令人满意的结果。     

4B9B束线低能分支的性能改进

分析了北京同步辐射实验室4B9B原束线低能分支的构造及弊病,在不影响束线高能分支性能及总体机械结构的基础上提出了改进方案.详细介绍了该设计方案和光束线调试工作及出光后束线的性能测试工作,该测试结果完全符合束线的设计.该束线在同步辐射专用光实验中充分发挥了改进后的优势,取得了令人满意的结果     

Temperature effect on the electronic structure of Nb:SrTiO3 (100) surface

The effect of temperature on the electronic structure of Nb-doped SrTiO_3(100) surface is investigated by highresolution synchrotron radiation photoemission spectroscopy.According to the x-ray photoemission spectroscopy(XPS)results,at an annealing temperature of less than 700 ℃,the adsorbed carbon and hydroxyl on the STO surface could be removed,to expose the fresh intrinsic surface with a constant ratio of Ti/O.It is obvious that the STO would be doped by Ca~+ impurities of bulks and O vacancies in the surface after annealing at 920 ℃ for one hour.     

铅(Ⅱ)印迹聚合物制备及其对铅(Ⅱ)的选择性吸附研究

以Pb2+为模板离子,顺丁烯二酸(MA)为功能单体,苯乙烯(St)为骨架单体,过硫酸钾(KPS)为引发剂,乙二醇二甲基丙烯酸酯(EGDMA)为交联剂制备了Pb2+印迹聚合物(IIP);用UV,FTIR,SEM对聚合物进行了表征,用火焰原子吸收光谱分析了IIP对Pb2+的选择性吸附;结果表明,聚合过程中发生了印迹作用,在室温下,溶液pH为5.4,吸附时间为60 min时,IIP对Pb2+的饱和吸附量可达到50.5 mg/g,吸附率达到90%;与相应非印迹聚合物(NIP)相比,IIP对Pb2+的吸附量增大并具有选择性,Pb2+与电荷相同及离子半径相近的Cd2+,Mn2+,Ni2+共存时,相对选择性系数分别为4.53,15.7,6.16;以HNO3(1+32)溶液作为解吸剂进行洗脱,解吸率可达99%;聚合物可作为吸附剂应用于环境水样中痕量Pb2+的分离富集。     

苯硫酚盐基溶液的可充镁电池电解液

将4-甲基苯硫酚、4-异丙基苯硫酚和4-甲氧基苯硫酚(RSH)分别与格氏试剂C2H5MgCl/THF(四氢呋喃)反应制得的苯硫酚氯化镁(RSMgCl)(分别标记为MBMC、IPBMC和MOBMC)/THF和进一步与Lewis酸AlCl3反应制得的(RSMgCl)n-AlCl3/THF(n=1,1.5,2)苯硫酚盐基溶液用作可充镁电池电解液,采用循环伏安和恒电流充放电测试研究了电解液的镁沉积-溶出性能和氧化分解电位.结果表明,苯硫酚上的基团种类和RSMgCl与AlCl3的比例对其电化学性能有影响.其中,0.5 mol·L-1(IPBMC)1.5-AlCl3/THF溶液具有最佳的电化学性能,其氧化分解电位适宜(2.4 V(vs Mg/Mg2+)),镁沉积-溶出循环效率稳定,过电位低,电导率较高(2.48 mS·cm-1),与正极材料Mo6S8兼容性良好,且具有一定的空气稳定性,配制方便,有希望应用于实际的可充镁电池体系中.     

尺寸可控Zn1.4Ga1.97-2xO4∶1.5%Cr，xIn近红外发光长余辉纳米颗粒的制备及其光学性质

采用一步水热法,通过In³⁺的掺杂,获得了尺寸可控的近红外(NIR)发光ZGO∶1.5%Cr,xIn(Zn_1.4Ga_1.97-2xO₄∶1.5%Cr,xIn,x=0%、0.1%、0.2%、0.3%、0.4%、0.5%)长余辉纳米颗粒(PLNPs),考察了In³⁺掺杂量对ZGO∶1.5%Cr,xIn PLNPs尺寸大小、余辉发光性能以及晶体结构的影响。In³⁺的掺杂不仅能有效控制ZGO∶1.5%Cr,xIn PLNPs尺寸,还可以增强发光和余辉时间。结果表明,当In³⁺掺杂量为0.2%时,ZGO∶1.5%Cr,0.2%In PLNPs平均粒径为13.79 nm,分布最为均匀,粒径最小,NIR发光最强,余辉时间超过5 d,可通过LED灯再激发。In³⁺的掺杂对ZGO∶1.5%Cr,xIn PLNPs的晶体结构无影响,均为纯相的尖晶石结构。     

Self—assembly and photoelectric properties of cerium compleses with 3,4,9,10—perylenetetracarboxylic acid on nanocrystalline TiO2 films

Self-assembled(SA)films (PMP,M=Ce^3 or Ce^4 )of 3,4,9,10-perylenetetracarboxylic acid(PTA)on nanocrystalline TiO2 films with Ce^3 or Ce^4 as a bridge were fabricated and characterized with UV-Vis,IR,and XPS synchrotron radiation photoelectron spectroscopy (SRPES) which gave the HOMO energy levels for the SA films.It was shown that thin-layer sndwich-type solar cells based on these SA films possess good properties for photoelectric conversion.While PTA-loaded TiO2 electrode(P) generated 26.9?f incident monochromatic phototo-to-electron conversion efficiency (IPCE),PMP-sensitized TiO2 electrodes yielded 55.8?and 39.1?for Ce^4 and Ce^3 respectively.PMP films can be considered as a kind of complexes whose HOMO energy levels were proved to eb higher than that of film P,which is one of the major reasons for the increase in IPCE form film P to film PMP.     

利用LMBE生长BaTiO3薄膜及其原位光电子能谱测量

利用激光分子束外延系统, 在STO:Nb衬底制备了高质量的BaTiO3单晶薄膜, 并在 北京同步辐射站4B9B对其进行了原位的光电子能谱的测量. XPS测量表明, 所生长的薄膜没有Ti离子变价. 实验中测得的价带谱与用ab initio方法计算的结果一致.