10-Gbit/s optical receiver using ICs with low-capacitance HBT technology

A 10-Gbit/s optical receiver is developed using low-capacitance HBT IC technology. The HBT allows a cutoff frequency of 45 GHz and a maximum oscillation frequency of 70 GHz. The receiver contains an automatic gain-control amplifier IC with a gain of 16 dB, a bandwidth of 10.7 GHz, and a decision-circuit IC with an ambiguity of 66 mVp-p at a data rate of 10 Gbit/s. The sensitivity of this receiver is -26.5 dBm at a bit error rate of 10^-9. Transmission over a 140-km fiber was achieved successfully.     

Hetergeneous-nucleation synthesis of monodisperse ε-cobalt nanoparticles using palladium seeds

Monodisperse bimetallic Pd–Co nanoparticles were prepared via a thermal decomposition of cobalt carbonyl using palladium seeds at the Pd/Co molar ratios 0.5%, 1%, and 5%. The heterogeneously nucleated nanoparticles without any size-selective precipitation are sufficiently uniform to self-assemble into ordered arrays. The as-synthesized nanoparticles are each a single crystal with a complex cubic structure called ε-Co. The presence of Pd seeds seems to improve the stability of Co nanoparticles against oxidation based on the results from time-dependent magnetization measurement.     

Enantioseparation of Dencichine and D-Isomer on L-Cysteine Derivative Phase by Ligand-exchange Chromatography

Dencichine (β-N-oxalyl-L-α, β-diaminopropionic acid, L-ODAP), a nonprotein amino acid, is a haemostatic agent present in important Chinese medicinal herbs such as Panax notoginseng, as well as other Panax species1. It was first isolated from the seeds …     

Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions

The effect of spin relaxation on tunnel magnetoresistance (TMR) in a ferromagnet/superconductor/ferromagnet (FM/SC/FM) double tunnel junction is theoretically studied. The spin accumulation in SC is determined by balancing of the spin-injection rate and the spin-relaxation rate. In the superconducting state, the spin-relaxation time τ_s becomes longer with decreasing temperature, resulting in a rapid increase of TMR. The TMR of FM/SC/FM junctions provides a useful probe to extract information about spin-relaxation in superconductors.     

Photocatalytic Synthesis of Oxygenates from Gaseous CO2 and CH4 over Semiconductor

Photoinduced synthesis of CO2 and CH4 was investigated using a batch reaction system on several photoactive materials supported on silicon dioxide. Single semiconductor showed higher selectivity to C1 compounds. The production of C2-C3 oxygenates took place preferentially on composite semiconductor photocatalysts. In particular, it was found that acetone was the primary product over Cu/CdS-TiO2/SiO2.     

Preparation,thermal properties,and flame retardance of epoxy–silica hybrid resins

A novel epoxy system was developed through the in situ curing of bisphenol A type epoxy and 4,4′‐diaminodiphenylmethane with the sol–gel reaction of a phosphorus‐containing trimethoxysilane (DOPO–GPTMS), which was prepared from the reaction of 9,10‐dihydro‐9‐oxa‐10‐phosphaphenanthrene‐10‐oxide (DOPO) with 3‐glycidoxypropyltrimethoxysilane (GPTMS). The preparation of DOPO–GPTMS was confirmed with Fourier transform infrared, ¹H and ³¹P NMR, and elemental analysis. The resulting organic–inorganic hybrid epoxy resins exhibited a high glass‐transition temperature (167 °C), good thermal stability over 320 °C, and a high limited oxygen index of 28.5. The synergism of phosphorus and silicon on flame retardance was observed. Moreover, the kinetics of the thermal oxidative degradation of the hybrid epoxy resins were studied. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 2354–2367, 2003     

Extremely large binding energy of biexcitons in an organic-inorganic quantum-well material (C4H9NH3)2PbBr4

We have confirmed biexciton formation in an organic-inorganic hybrid quantum-well material (C₄H₉NH₃)₂PbBr₄ by photoluminescence and two-photon absorption measurements. The biexciton has extremely large binding energy, 60 meV, which to our knowledge is the largest value ever reported for a semiconductor. By analyzing the spectrum of biexciton luminescence, the biexciton gas temperature was found to be much higher than the bath temperature due to a higher local temperature arising from the large biexciton binding energy.