Electrical characterization of nylon-6 composite nanofibers

The electrical characteristics of nylon-6 nanofibers incorporated with TiO₂ and Fe₃O₄ nanoparticles were investigated. The resultant nanofibers exhibited good incorporation of nanoparticles. The impregnated TiO₂ and Fe₃O₄ nanoparticles into the nylon-6 nanofibers were confirmed by high resolution transmission electron microscopy (HR-TEM) and energy dispersive X-ray (EDX) spectroscopy studies. The electrical conductivity of the nylon-6 incorporated with TiO₂ and Fe₃O₄ composite nanofibers were higher than that of the pristine nylon-6 nanofibers. The impregnation of TiO₂ and Fe₃O₄ nanoparticles significantly enhanced the electrical property of the composite nanofibers. These polymeric/nanoparticles composite nanofibers structure may open a new direction for future organic electronics.     

Improved Statistically Optimal Nearfield Acoustical Holography in subsonically moving fluid medium

Statistically Optimal Nearfield Acoustical Holography (SONAH) can be used to reconstruct three-dimensional sound fields by projecting two-dimensional data measured on a “small” aperture that partially covers a composite sound source in a “static” fluid medium. Here, an improved SONAH procedure is proposed that includes the mean flow effects of a moving fluid medium while the sound source and receivers are stationary. The backward projection performance of the proposed procedure is further improved by using a wavenumber filter to suppress subsonic noise components. Through numerical simulations at Mach 0.6, it is shown that the improved procedure can accurately reconstruct sound source locations and radiation patterns: e.g., the spatially averaged reconstruction errors of the conventional and improved SONAH procedures are 15.40 dB and 0.19 dB, respectively, for a monopole simulation and 21.60 dB and 0.19 dB for an infinite-size panel. The wavenumber filter further reduces spatial noise, e.g., decreasing the reconstruction error from 1.73 dB to 0.19 dB for the panel simulation. An existing data measured in a wind tunnel operating at Mach 0.12 is reused for the validation. The locations and radiation patterns of the two loudspeakers are successfully identified from the sound fields reconstructed by using the proposed SONAH procedure.     

Magnetized SPR sensor for enhanced functionality

It is known that a magnetic field changes the RI and the SPR angle of specific analytes. We have applied an external magnetic field to a surface plasmon resonance (SPR) sensor to exploit this phenomenon. A gold film is used for excitation of SPR in the sensor with a Kretschmann configuration. According to the concentration of 4-type analyte, we observed unique changes of the SPR angle due to the magnetic field, providing better classification of material type than a conventional SPR sensor.     

Surface–plasmon-coupled photoluminescence from CdS nanoparticles with Au films

The enhancement of surface–plasmon-coupled photoluminescence from CdS nanoparticles was examined for various thicknesses of sputtered Au films. The improved luminescence with thickness control of Au correlated well with the increased density of surface–plasmon states, which was modified by the plasmon-dispersion relation at the planar Au/PMMA interface. By annealing the Au films to form a rough surface morphology, the emission in the CdS nanoparticles was further enhanced by the improved excitation and coupling of the surface–plasmon modes.     

Optimal ablation of fluorine-doped tin oxide (FTO) thin film layers adopting a simple pulsed Nd:YAG laser with TEM00 mode

In material processing, a laser system with optimal laser parameters has been considered to be significant. Especially, the laser ablation technology is thought to be very important for fabricating a dye-sensitized solar cell (DSSC) module with good quality. Moreover, the TEM₀₀ mode laser beam is the most dominant factor to decide the incident photon to current conversion efficiency (IPCE) characteristics. In order to get the TEM₀₀ mode, a pin-hole is inserted within a simple pulsed Nd:YAG laser resonator. And the spatial field distribution is measured by using three pin-hole diameters of 1.6, 2.0 and 4.0 mm, respectively. At that moment, each case has the same laser beam energy by adjusting the discharge voltage and pulse per second (pps). From those results, it is known that the pin-hole size of 1.6 mm has the perfect TEM₀₀ mode. In addition, at the charging voltage of 1000 V, 10 pps, the feeding speed of 6.08 mm/s and the overlapping rate (OL) of 62%, the scanning electron microscope (SEM) photograph of fluorine-doped tin oxide (FTO) thin film layers shows the best ablation trace.     

A Lagrangian heuristic algorithm for a public healthcare facility location problem

We consider a healthcare facility location problem in which there are two types of patients, low-income patients and middle- and high-income patients. The former can use only public facilities, while the latter can use both public facilities and private facilities. We focus on the problem of determining locations of public healthcare facilities to be established within a given budget and allocating the patients to the facilities for the objective of maximizing the number of served patients while considering preference of the patients for the public and private facilities. We present an integer programming formulation for the problem and develop a heuristic algorithm based on Lagrangian relaxation and subgradient optimization methods. Results of computational experiments on a number of problem instances show that the algorithm gives good solutions in a reasonable computation time and may be effectively used by the healthcare authorities of the government.     

Variable sampling interval Shewhart control charts for monitoring the multivariate coefficient of variation

In many industrial manufacturing processes, the ratio of the variance to the mean of a quantity of interest is an important characteristic to ensure the quality of the processes. This ratio is called the coefficient of variation (CV). A lot of control charts have been designed for monitoring the CV of univariate quantity in the literature. However, the CV control charts for multivariate quantity have not received much attention yet. In this paper, we investigate a variable sampling interval (VSI) Shewhart control chart for monitoring multivariate CV. The time between two consecutive samples is allowed to vary according to the previous value of the multivariate CV, which will help the chart to detect the process shifts faster. The comparison with the fixed sampling interval Shewhart chart is implemented to highlight the advantage of the VSI method. Finally, an illustrative example is demonstrated on real data.     

Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier

We investigate the effects of a thin AlAs layer with different position and thickness on the optical properties of InAs quantum dots (QDs) by using transmission electron microscopy and photoluminescence (PL). The energy level shift of InAs QD samples is observed by introducing the thin AlAs layer without any significant loss of the QD qualities. The emission peak from InAs QDs directly grown on the 4 monolayer (ML) AlAs layer is blueshifted from that of reference sample by 219 meV with a little increase in FWHM from 42–47 meV for ground state. In contrast, InAs QDs grown under the 4 ML AlAs layer have PL peak a little redshifted to lower energy by 17 meV. This result is related to the interdiffusion of Al atom at the InAs QDs caused by the annealing effect during growing of InAs QDs on AlAs layer.     

The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD

InAs quantum dots (QDs) were grown on InP substrates by metalorganic chemical vapor deposition. The width and height of the dots were 50 and 5.8 nm, respectively on the average and an areal density of 3.0×10¹⁰ cm⁻² was observed by atomic force microscopy before the capping process. The influences of GaAs, In_0.53Ga_0.47As, and InP capping layers (5–10 ML thickness) on the InAs/InP QDs were studied. Insertion of a thin GaAs capping layer on the QDs led to a blue shift of up to 146 meV of the photoluminescence (PL) peak and an InGaAs capping layer on the QDs led to a red shift of 64 meV relative to the case when a conventional InP capping layer was used. We were able to tune the emission wavelength of the InAs QDs from 1.43 to 1.89 μm by using the GaAs and InGaAs capping layers. In addition, the full-width at half-maximum of the PL peak decreased from 79 to 26 meV by inserting a 7.5 ML GaAs layer. It is believed that this technique is useful in tailoring the optical properties of the InAs QDs at mid-infrared regime.     

Surface structure of low-coveraged Cs on Si(0 0 1)-() system

Alkali metals (AM) on semiconductors have been investigated as a simple model system for the metal-semiconductor interfaces due to their simple electronic structures. Especially, cesium (Cs) on Si(0 0 1) surface has been studied with various experimental techniques. In this study, we investigated the atomic structure of initial Cs adsorption on Si(0 0 1)-(2×1) surface using coaxial impact collision ion scattering spectroscopy. When Cs atoms are adsorbed on Si(0 0 1)-(2×1) up to 0.2 ML at room temperature, the initial adsorption site is on-top T3 site with poor periodicity and the length of Si dimer is reserved as in the clean Si(0 0 1) surface. It is also found that Cs atoms adsorbed on Si(0 0 1) surface with a height of 2.83±0.05 Å from the second layer of Si(0 0 1) surface.