磁镜装置中ECR等离子体硬X射线强度观测

本文描述用硬X射线针孔成象法测量简单磁镜装置中ECR等离子体辐射特性的方法及其结果。这种非破坏性的成象法,直接显示了热电子等离子体的空间分布,一次放电可成一帧清晰的象,且由此可得出二维的等发射强度线。大量结果表明电子环是非轴对称的,并非为一个整环,而是在微波注入口的对面有一个缺口。当微波功率改变时,环也在改变。     

Least‐squares mixed finite element methods for the incompressible Navier‐Stokes equations

Least‐squares mixed finite element schemes are formulated to solve the evolutionary Navier‐Stokes equations and the convergence is analyzed. We recast the Navier‐Stokes equations as a first‐order system by introducing a vorticity flux variable, and show that a least‐squares principle based on L² norms applied to this system yields optimal discretization error estimates. © 2002 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 18: 441–453, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/num.10015     

铁磁材料磁化曲线的智能观测系统

利用单片机系统控制物理实验过程，智能地测绘起始磁化曲线和磁滞回线，从而使学生们看到完整的磁化过程，对铁磁物质的磁滞现象有个充分的认识。     

On time-like surfaces of positive constant Gaussian curvature and imaginary principal curvatures

We establish the Bäcklund transformation for the construction of time-like surfaces with positive Gaussian curvature and imaginary principal curvatures. The construction can be realized by algebraic algorithm via Darboux transformations.     

(Si,Er)双注入热氧化硅的光致发光

采用强流金属蒸汽真空弧（MEVVA）离子源注入机，先将Si大束流注入热氧化SiO2/单晶硅，直接形成镶嵌在SiO2中的纳米晶Si，再小束流注入Er。Er离子在掺杂层中的浓度可达10^21cm^-3量级，大大地提高了作为孤立发光中心的Er^3 浓度。在77K和室温下，观察到了Er^3 的1.54цm特征发射。     

电磁波在大气层人造等离子体中的衰减特性

利用洛沦兹模型来研究大气层人造非均匀等离子体的电磁响应特性,讨论了电磁波频率、等离子体密度及电子碰撞频率对电磁波衰减特性的影响.结果表明,电磁波在长波长区域及等离子体密度大时,其能量衰减越快.当等离子体密度高时,电子温度越低,大气层高度越高,电磁波的能量衰减越快. 关键词： 电磁波 大气等离子体 能量衰减     

有机薄膜光盘的微区结构

通过光学显微镜（ＯＭ）扫描电镜（ＳＥＭ）和扫描隧道显微镜（ＳＴＭ）观察了光记录有机薄膜的微区结构，从微区结构的形貌可以看出光记录后酞菁薄膜上产生了鼓泡，通过这些观察方法的比较发现扫描隧道显微镜可以提供更加详细，精确的三维参数，薄膜的微区结构研究对于分析光盘的性能，了解记录机理具有重要意义。     

Fabrication of silicon nanowires

2 at 750 °C and 850 °C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowire following oxidation at 750 °C still keeps its pentagon shape even if it has been oxidized for 19 h. However, the oxidized samples at 850 °C become circular in shape. The oxidation-temperature dependence of the sample shapes is discussed. Our results should be useful in generating silicon nanowires coated with SiO₂ in microelectronic technology with careful selection of the SiO₂ growth temperatures. Received: 26 September 1997/Accepted: 8 December 1997     

Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors

Using homo-junction structure and relative thin linear graded In_xGa_1−xAs as the buffer layer, extended wavelength InGaAs PIN photodetectors with cut-off wavelength of 2.2 and 2.5 μm at room temperature have been grown by using GSMBE, and their performance over a wide temperature range have been extensively investigated. For those 2.2 or 2.5 μm detectors with 100 μm diameter, the typical dark current (V_R = 10 mV) and R₀A are 57 nA/10.3 Ω cm² or 67 nA/12.7 Ω cm² at 290 K, and 84 pA/4.70 kΩ cm² or 161 pA/3.12 kΩ cm² at 210 K respectively. The thermal activation energies of the dark current are 0.447 eV or 0.404 eV for 2.2 or 2.5 μm detectors respectively.