Direct electrochemistry of uric acid at chemically assembled carboxylated single-walled carbon nanotubes netlike electrode

Carboxylated single-walled carbon nanotubes (SWCNT) chemically assembled on gold substrate was employed as netlike electrode to investigate the charge-transfer process and electrode process kinetics using uric acid as an example. The electrochemical behavior of uric acid in carboxylated SWCNT system was investigated using cyclic voltammetry, chronoamperometry, and single potential time-based techniques. The properties of raw SWCNT electrode were also studied for comparison purpose. Uric acid has better electrochemical behavior whereas ascorbic acid has no effective reaction on the carboxylated SWCNT electrode. Cyclic voltammograms indicate that the assembled carboxylated SWCNT increases more active sites on electrode surface and slows down the electron transfer between the gold electrode and uric acid in solution. The charge-transfer coefficient (alpha) for uric acid and the rate constant (k) for the catalytic reaction were calculated as 0.52 and 0.43 s(-1), respectively. The diffusion coefficient of 0.5 mM uric acid was 7.5 x 10(-6) cm2 x s(-1). The results indicate that electrode process in the carboxylated SWCNT electrode system is governed by the surface adsorption-controlled electrochemical process.     

Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures

We have developed low temperature formation methods of SiO₂/Si and SiO₂/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO₃ aqueous solutions at 120 °C), an ultrathin (i.e., 1.3-1.4 nm) SiO₂ layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 °C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 °C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO₂ gap-state density, and (iii) high band discontinuity energy at the SiO₂/Si interface arising from the high atomic density of the NAOS SiO₂ layer.For the formation of a relatively thick (i.e., ≥10 nm) SiO₂ layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in ∼40 wt% HNO₃ and azeotropic HNO₃ aqueous solutions, respectively. In this case, the SiO₂ formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO₂ layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO₂ layer is slightly higher than that for thermal oxide. When PMA at 250 °C in hydrogen is performed on the two-step NAOS SiO₂ layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 °C.A relatively thick (i.e., ≥10 nm) SiO₂ layer can also be formed on SiC at 120 °C by use of the two-step NAOS method. With no treatment before the NAOS method, the leakage current density is very high, but by heat treatment at 400 °C in pure hydrogen, the leakage current density is decreased by approximately seven orders of magnitude. The hydrogen treatment greatly smoothens the SiC surface, and the subsequent NAOS method results in the formation of an atomically smooth SiO₂/SiC interface and a uniform thickness SiO₂.     

Selective adsorption and alignment behaviors of double- and multiwalled carbon nanotubes on bare Au and SiO2 surfaces

We present the study of selective adsorption and alignment behaviors of double- and multiwalled carbon nanotubes (dwCNTs and mwCNTs) on self-assembled monolayer (SAM) patterns, bare Au, and SiO2 surfaces. dwCNTs and mwCNTs exhibited stronger affinity to polar SAMs, bare Au, and SiO2 surfaces than to nonpolar SAM surfaces. Furthermore, we found the adsorption probability of smaller carbon nanotubes (CNTs) was higher than that of larger CNTs. As proof of concept, we successfully assembled and aligned dwCNTs and mwCNTs on Au and SiO2 substrates without relying on external forces and demonstrated wafer-scale fabrication of back-gate transistors based on dwCNTs with a high yield.     

Scaling behavior of the first arrival time of a random-walking magnetic domain

We report a universal scaling behavior of the first arrival time of a traveling magnetic domain wall into a finite space-time observation window of a magneto-optical microscope enabling direct visualization of a Barkhausen avalanche in real time. The first arrival time of the traveling magnetic domain wall exhibits a nontrivial fluctuation and its statistical distribution is described by universal power-law scaling with scaling exponents of 1.34+/-0.07 for CoCr and CoCrPt films, despite their quite different domain evolution patterns. Numerical simulation of the first arrival time with an assumption that the magnetic domain wall traveled as a random walker well matches our experimentally observed scaling behavior, providing an experimental support for the random-walking model of traveling magnetic domain walls.     

Direct observation of dispersive Kondo resonance peaks in a heavy-fermion system

Ce 4d-4f resonant angle-resolved photoemission spectroscopy was carried out to study the electronic structure of strongly correlated Ce 4f electrons in a quasi-two-dimensional nonmagnetic heavy-fermion system CeCoGe1.2Si0.8. For the first time, dispersive coherent peaks of an f state crossing the Fermi level, the so-called Kondo resonance, are directly observed together with the hybridized conduction band. Moreover, the experimental band dispersion is quantitatively in good agreement with a simple hybridization-band picture based on the periodic Anderson model. The obtained physical quantities, i.e., coherent temperature, Kondo temperature, and mass enhancement, are comparable to the results of thermodynamic measurements. These results manifest an itinerant nature of Ce 4f electrons in heavy-fermion systems and clarify their microscopic hybridization mechanism.     

A Directly Patternable,Click‐Active Polymer Film via Initiated Chemical Vapor Deposition

Click‐active surfaces patterned at 200 nm resolution are demonstrated using the dual functional polymeric film, poly(propargyl methacrylate) (PPMA). The commercially available monomer of propargyl methacrylate (PMA) is polymerized in a single step by initiated chemical vapor deposition (iCVD). FT‐IR and X‐ray photoelectron spectroscopy confirm retention of the click‐active acetylene functional group in the bulk and surface of the iCVD film, respectively. Treating substrates with silane coupling agents prior to deposition results in grafting of iCVD PPMA polymers onto various inorganic surfaces. This grafting technique provides the chemical and mechanical stability required for the PPMA layer to survive the subsequent wet chemical steps used for click functionalization. Successful attachment of an azido‐functionalized coumarin dye is demonstrated. Moreover, the PPMA film displays direct positive‐tone sensitivity to e‐beam irradiation, which enables e‐beam patterning without the use of a resist layer. Direct e‐beam exposure of the multifunctional PPMA iCVD layer results in a 200 nm pattern to which quantum dot nanoparticles are selectively conjugated on the substrates by click chemistry.

     

Characteristics of polypropylene biocomposites: effect of chemical treatment to produce cellulose microparticle

Cellulose - In this study, cellulose microparticle were prepared by sulfuric acid hydrolysis, glyoxal crosslinking and acetylation followed by air classifying mill, and their properties including...