Fast Liquid Phase Epitaxial Growth for Perovskite Single Crystals

Semiconductors grown by the solution-processed method have shown low-cost,facile fabrication process and comparable performance.However,there are many reasons why it is difficult to achieve high quality films.For example,lattice constant mismatch is one of the problems when photovoltaic devices made of organ metallic perovskites.In this work,MAPbBr^{MA=CH3NH3^+}perovskites single crystals grown on the surface of MAPbBr2.5 CI0.5 perovskites single crystals via liquid epitaxial growth method is demonstrated.It is found that when the lattice constants of the two perovskite single crystals are matched,another crystal can be grown on the surface of one crystal by epitaxial growth.The whole epitaxy growth process does not require high heating temperature and long heating time.X-ray diffraction method is used to prove the lattice plane of the substrate and the epitaxial grown layer.A scanning electron microscope is used to measure the thickness of the epitaxial layer.Compared with perovskite-based photodetectors without epitaxial growth layer,perovskite-based photodetectors with epitaxial growth layer have lower dark current density and higher optical responsibility.     

Et2Zn-mediated stoichiometric C(sp)-H silylation of 1-alkynes and chlorosilanes

A first example of an Et₂Zn mediated silylation of 1-aklynes is reported. A series of functional groups are tolerated in this reaction. Mechanistic studies support Zn alkynilides as intermediates in the reaction. This reaction protocol provides a practical method for the preparation of alkynylsilanes and expands the application of organometallic zinc in organic synthesis.     

Temperature Dependence of the Refractive Indices of Doped K2SO4 Crystals

Journal of Applied Spectroscopy - The temperature dependence of the refractive indices of K2SO4 with copper impurity was investigated. It was found that introduction of the copper impurity leads to...     

Formation of a two-dimensional periodic structure of local melting regions on a silicon surface upon pulsed light irradiation

The first results regarding the formation of a two-dimensional periodic structure of local melting regions on a silicon surface upon pulsed light irradiation are presented. The conditions are established, and the mechanism of the formation of such structures is discussed. Zh. Tekh. Fiz. 67, 97–99 (December 1997)     

5-[5-R-furfurylidene]-2,2-dimethyl-1,3-dioxane-4,6-diones 5. Nucleophilic replacement of halogen in the furan ring

Halogen in positions 3 and 5 of the furan ring in ftirfurylidenedioxanediones is readily replaced by dithiocarbonate, dithiocarbatnate, dithiophosphate, thiocyanate, and azide anions, and by thiourea, and secondary and tertiary amines. The conformation of the initial halogen derivative is retained in the substitution products.Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 3, pp. 327–334, March, 1994.