稀土配合物Eu(asprin)_3phen发光特性的研究

将稀土配合物Eu(asprin)_3phen掺杂到导电聚合物PVK中,制成结构分别为ITO/PVK:RE配合物/LiF/AI(1),ITO/PVK:RE配合物/PBD/LiF/AI(2)的电致发光(EL)器件。发现二者的电致发光谱存在着较大的差别:在器件(1)中,来自Eu~(3 )的位于594nm(~5D_0→~7F_1)和614nm(~5D_0→~7F_2)处的发光强度大致相当,而在器件(2)中,EL主要来自Eu~(3 )位于614nm的发光,594nm处的发光很弱,与薄膜状态下的光致发光谱(PL)一致。并针对此现象进行了初步讨论。     

利用模式的对称性研究光子晶体光纤的色散

由光子晶体光纤的对称性可以得到模式分布的对称性，根据模式的对称性选择适当的展开函数，可以使计算量大大减少。计算了六角结构光子晶体光纤的色散特性，得到了波长在1．55pm处色散为零时，光子晶体光纤的结构参量所满足的方程。     

A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption

We have demonstrated a passively Q-switched operation of Nd:GdVO₄ laser in which a GaAs crystal is used as the saturable absorber for the first time as far as we know. A maximum average output power of 1.64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion efficiency and peak power were 13.7% and 116.8 W, respectively. The maximum peak energy obtained in the experiment by 50% transmission couple was 19 μJ.     

Division and <Emphasis Type="Italic">k</Emphasis>-th root theorems for <Emphasis Type="Italic">Q</Emphasis>-manifolds

We prove that a locally compact ANR-space X is a Q-manifold if and only if it has the Disjoint Disk Property (DDP), all points of X are homological Z _∞-points and X has the countable-dimensional approximation property (cd-AP), which means that each map f: K → X of a compact polyhedron can be approximated by a map with the countable-dimensional image. As an application we prove that a space X with DDP and cd-AP is a Q-manifold if some finite power of X is a Q-manifold. If some finite power of a space X with cd-AP is a Q-manifold, then X ² and X × [0, 1] are Q-manifolds as well. We construct a countable family χ of spaces with DDP and cd-AP such that no space X ∈ χ is homeomorphic to the Hilbert cube Q whereas the product X × Y of any different spaces X, Y ∈ χ is homeomorphic to Q. We also show that no uncountable family χ with such properties exists. This work was supported by the Slovenian-Ukrainian (Grant No. SLO-UKR 04-06/07)     

Ga1-xInxAs/InAsyP1-y/InP异质结的MOCVD生长及表征

Ga1-xInxAs(x>0.53)材料是未来长距离低损耗光纤通信的理想光源材料和探测器材料之一.我们采用水平常压MOCVD系统,在InP衬底上成功地生长了Ga1-xInxAs(x>0.53)/InAsyP1-y/Inp异质结材料.其中InAs1-yPy为组份阶梯变化的多层结构.由样品的(400)面X光衍射结果测定了各层组份.由二次离子质谱(SIMS)得到了样品剖面组份变化结果,证明InAs1-yPy层组份为阶梯状变化的.通过对光致发光结果和X光衍射结果比较,可以看到,InAsyP1-y层通过位错和弹性畸变二种方式来释放或积累Ga1-xInxAs与InP间的失配应力,从而减少了Ga1-xInxAs中的失配位错.有效地改善了Ga1-xInxAs的质量.已获得了x高达0.94表面光亮的Ga1-xInxAs/InAs1-yPy/InP异质结材料.     

Millimeter wave beams diffracted from reflecting gratings

According to the angular-spectrum method, a radiation beam of an antenna horn in the Fresnal region is decomposed into the plane waves with the fast Fourier transform algorithm and the waves diffracted from a reflection grating are superposed as a diffracted beam. Compared with the reflected beam from the same size mirror, the radiation half width of the diffracted beam from a grating is narrower and its lateral shape is shift. These performances have been experimentally verified at Ka-band by: (1). The relative diffraction efficiencies in the first order with two triangular gratings which is put along propagating direction of a beam produced by a conical lens-horn. (2). H-plane lateral width with power—3dB lapsed of the focus beam from a grating and a mirror in a grating spectrometer for millimeter waves (25–100 GHz).     

烃类烟粒红外复折射率的测定与应用

测定了室温下烃类(乙炔、乙烷)烟粒的红外复折射率,并讨论了所获数据在测量烟浓度与烟粒大小分类、计算光谱吸收系数及在特定浓度与温度下评估烟雾辐射率方面的应用。     

基于RBC模型的动态随机一般均衡的数值解

以一般均衡为框架,引入随机变量的动态随机一般均衡系统,由于模型的庞大和函数形式的复杂,往往不能给出明确的数值解.本文给出几种操作性强的、有效的寻求一般化模型数值解的方法,并通过介绍模型参数确定的办法,使得理论的模型有了现实的含义.