Properties of the πh 9/2 ⊗ νi 13/2 band in odd-odd 188Au

A new rotational band has been identified and assigned to ¹⁸⁸Au for the first time using the ¹⁷³Yb(¹⁹F,4nγ) reaction at the beam energies of 86 and 90 MeV. This band is proposed to be built on the πh _9/2 ⊗ νi _13/2 configuration by comparing the band properties with known bands in neighboring nuclei. The prolate-to-oblate shape transition through triaxial shape has been proposed to occur around ¹⁸⁸Au for the ηh _9/2 ⊗ νi _13/2 bands in odd-odd Au isotopes on the basis of total Routhian surface (TRS) calculations.

     

High-j proton alignments in 101Pd

High-spin states in ¹⁰¹Pd have been investigated by means of in-beam γ-ray spectroscopic techniques via the ⁷⁶Ge(²⁸Si, 3n) reaction at beam energies of 85 and 95 MeV. The previously known d _5/2 and 1/2^?[550] bands were extended to higher spins, and the unfavored signature branch of the 1/2^?[550] band was built. The band crossings observed experimentally are explained by the alignment of g _9/2 protons. The band properties in ¹⁰¹Pd are compared with those in the neighboring nuclei and are discussed within the framework of the cranked shell model (CSM).     

Disk-type Nd/Cr:YAG ceramic lasers pumped by arc-metal-halide-lamp

We observed the lasing of highly sensitized Nd/Cr:YAG ceramic disks that use artificial solar radiation pumping. The disk material can be used for high power multi-stage amplifiers pumped by lamplight or sunlight because of its scalability and ability to handle high power densities. A maximum output power of 86 mW was experimentally obtained, and this value correlated well with the calculated results. A small signal gain of 1.9 was obtained, and the estimated stored energy was 0.6 J/cm³, which is three or four times higher than that from a Nd:YAG medium.     

Electrical characteristics of Mg-doped GaN activated with Ni catalysts

Electrical characteristics of Mg-doped p-GaN activated with Ni catalytic layers have been investigated by means of temperature-dependent Hall effect measurements. It has been revealed that the Ni layer on GaN enhances activation of the acceptor in the whole annealing temperature range. This enhancement is remarkable especially at temperatures below 500 °C and can be attributed to the catalytic effect for the hydrogen desorption. We have found that the donor concentrations in the samples activated with the Ni catalysts are also higher than those activated without Ni. This is probably due to the catalytic effect of Ni for the nitrogen desorption. In addition, it has been found that the ionization energies of the Mg acceptors in GaN activated with the Ni layer are decreased from 170 to 118 meV as the acceptor concentration increases.     

Development of ion transportation, extraction and neutralization systems for atomic beam resonance method

A device that produces a low-energy and largely spin polarized RI beam based on the atomic beam resonance method (RIABR) has been developed. We have performed measurements of stopping and drifting an incoming RI ion beam in a gas chamber, extraction of the ions into a vacuum region, and neutralization of the extracted low-energy ion beam. The drift efficiency of RI ions in a gas and the extraction efficiency at a Laval-type glass nozzle were found to be 0.72±0.04 and 0.033, respectively. The result of the experiment for the neutralization is also discussed.