Fluorination of diamond — C4F9I and CF3I photochemistry on diamond (100)

The radiation-induced decomposition of C₄F₉I and CF₃I overlayers at 119 K on diamond (100) surfaces has been shown to be an efficient route to fluorination of the diamond surface. X-ray photoelectron spectroscopy has been used for photoactivation as well as for studying the photodecomposition of the fluoroalkyl iodide molecules, the attachment of the photofragments to the diamond surface, and the thermal decomposition of the fluoroalkyl ligands. Measured chemical shifts agree well with ab initio calculations of both C 1s and F 1s binding energies. It is found that chemisorbed CF₃ groups on diamond (100) decompose by 300 K whereas C₄F₉ groups decompose over the range 300 to 700 K and this reactivity difference is rationalized on steric grounds. Both of these thermal decomposition processes produce surface C---F bonds on the diamond. The surface C---F species thermally decompose over a wide temperature range extending up to 1500 K. Hydrogen passivation of the diamond surface is ineffective in preventing free radical attack from the photodissociated products of the fluoroalkyl iodides; I atoms produced photolytically abstract H from surface C---H bonds to yield hydrogen iodide at 119 K allowing diamond fluorination. The attachment of chemisorbed F species to the diamond (100) surface causes band bending as the surface states are occupied as a result of chemisorption. This results in a shift to higher binding energy of the diamond-related C 1s levels present in the surface and subsurface regions which are sampled by XPS on the diamond. The use of photoactivation of fluoroalkyl iodides for the fluorination of diamond surfaces provides a convenient route compared to other methods involving the action of atomic F, molecular F₂, XeF₂ and F-containing plasmas.     

Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ − SR method

The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×10¹³ cm⁻³) and antimony (Sb: 2×10¹⁸ cm⁻³) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center _μ A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998)     

Galactic anisotropy as signature of “top-down” mechanisms of ultrahigh-energy cosmic rays

We show that “top-down” mechanisms of ultrahigh-energy cosmic rays which involve heavy relic particle-like objects predict a Galactic anisotropy of the highest-energy cosmic rays at the level of minimum ∼ 20%. This anisotropy is large enough to be either observed or ruled out in the next generation of experiments. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 2, 99–103 (25 July 1998) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Random Homeomorphisms and Fourier Expansions

We prove that a random change of variable in general improves convergence properties of the Fourier expansions, and we give a precise quantitative estimate of the phenomenon. Submitted: December 1997, final version: May 1998     

Electronic molecule-like spectrum of quantum wells in crossed fields

We show that an electron confined to a single finite parabolic quantum well in crossed electric and magnetic fields can behave as a double quantum well system. The magnetic field is parallel to the heterostructure layers and the electric field is perpendicular to those. For a suitable choice of both fields and quantum well width, the electron can be confined to a double quantum well effective potential that is very similar to the electronic potential model for diatomic molecules. The double quantum well spectrum is calculated using a numerical algorithm based on semiclassical methods. A physical interpretation of this quantum system is given based on the analogy to the electrons bound to diatomic molecules.     

Space time-index plots for probing dynamical nonstationarity

We propose a simple method to efficiently probe dynamical nonstationarity in observed time series. In a space time-index plot, the density distributions as a function of normalized time-index are V-shaped due to nonstationarity. We show that this method is workable for short data sets and typical examples are illustrated.     

Optical properties of impurity atoms in pressurized superfluid helium

We report on the optical properties of alkali atoms (Cs and Rb) in the pressurized superfluid helium. We observed excitation and emission spectra at various pressures from the saturated vapor pressure to about 25 atm. The theoretical calculations on the basis of the atomic bubble model have also been worked out. The qualitative agreement between the theoretical and experimental results with respect to the peak shift, the linewidth, and their pressure dependence is achieved in the framework of the spherical atomic bubble model. TheD ₂ excitation spectra with the double peaks are interpreted qualitatively in terms of the Jahn-Teller effect, indicating the existence of the nontotally symmetrical density distribution of the surrounding helium atoms.     

Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser

A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N₂O and SiH₄, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO _x films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase.     

On nonspecular “total internal reflection” of powerful electromagnetic waves

It is shown that the nonstable character of nonlinear interaction of a system of waves similar to that resulting from double stimulated Brillouin scattering is retained upon the oblique incidence of a powerful electromagnetic wave on a layer of supercritical plasma. In this case we have nonlinear back reflection from a layer of supercritical plasma. The threshold intensity of the pump wave is greater than that in the case of subcritical plasma for TE polarization waves but can markedly decrease for waves polarized in the incidence plane. Instability is possible only for a layer of finite thickness.Radiophysical Research Institute, Nizhny Novgorod. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 38, Nos. 3–4, pp. 298–303, March–April, 1995.