直径不超过4的树的割宽

§ 1　IntroductionThe cutwidth problem for graphs,as well as a class of optimal labeling and embed-ding problems,have significant applications in VLSI designs,network communicationsand other areas (see [2 ] ) .We shall follow the graph-theoretic terminology and notation of [1 ] .Let G=(V,E)be a simple graph with vertex set V,| V| =n,and edge set E.A labeling of G is a bijec-tion f:V→ { 1 ,2 ,...,n} ,which can by regarded as an embedding of G into a path Pn.Fora given labeling f of G,th…     

Crystal Structure of Adduct 2-Phenyl-imidazo [ 4,5-f ] 1,10-phenanthroline Methanol

The structure of the title adduct comprises a phenanthroline derivative 2-phenyl-imidazo[4,5-f]1,10-phenanthroline and a methanol.The composition of the crystalline adduct was characterized as C19H12N4.CH3OH.It belongs to orthorhombic system,space group Pna21 with a=1.3693(4)nm,b=2.2988(7)nm,c=0.51338(15)nm,V=1.6160(8)nm^3.Z=4,and final R1=0.0423.wR2=0.1012 .Crystal structure shows that all the 19 carbon atoms and 4 nitrogen atoms are coplanar.The bond length data indicated that a very extensive conjugation system was formed.This conjugation makes the compound being a potentially excellent energy transformer used for luminescent materials.     

Liminf results on the increments of an (N,d)-Gaussian process

We establish some liminf theorems on the increments of a (N,d)-Gaussian process with the usual Euclidean norm, via estimating upper bounds of large deviation probabilities on the suprema of the (N,d)-Gaussian process. This revised version was published online in June 2006 with corrections to the Cover Date.     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

Peritectic phase growth in directionally solidified Cu-70% Sn alloy

The growth mechanism of the peritectic η phase involving the peritectic reaction and peritectic transformation in Cu-70%Sn alloy was investigated under directional solidification. The results show that a major growth mechanism in thickening of the peritectic η-layer is not the peritectic reaction but the peritectic transformation. The transformation temperature and isothermal time play crucial roles in determining the volume fraction and the thickness of the peritectic η phase. With the increase of the temperature and isothermal time, the volume fraction of the peritectic η phase increases. The regressed data show that the relationship between the thickness of η phase (Δx) and the transformation temperature (T) meets the following equation In Δx=6.5−1673 1 / T. Additionally, there exists a relationship between the thickness of the η phase (Δx) and the isothermal time (t) at the 9 mm solidification distance below the peritectic reaction interface, Δx=0.72t ^1/2, which is consistent with the theoretical model. Supported by the National Science Foundation of China (Grant No. 50395102)     

Gauged harmonic maps,Born‐Infeld electromagnetism,and magnetic vortices

We study maps from a 2‐surface into the standard 2‐sphere coupled with Born‐Infeld geometric electromagnetism through an Abelian gauge field. Such a formalism extends the classical harmonic map model, known as the σ‐model, governing the spin vector orientation in a ferromagnet allows us to obtain the coexistence of vortices and antivortices characterized by opposite, self‐excited, magnetic flux lines. We show that the Born‐Infeld free parameter may be used to achieve arbitrarily high local concentration of magnetic flux lines that the total minimum energy is an additive function of these quantized flux lines realized as the numbers of vortices antivortices. In the case where the underlying surface, or the domain, is compact, we obtain a necessary sufficient condition for the existence of a unique solution representing a prescribed distribution of vortices antivortices. In the case where the domain is the full plane, we prove the existence of a unique solution representing an arbitrary distribution of vortices and antivortices. Furthermore, we also consider the Einstein gravitation induced by these vortices, known as cosmic strings, establish the existence of a solution representing a prescribed distribution of cosmic strings cosmic antistrings under a necessary sufficient condition that makes the underlying surface a complete surface with respect to the induced gravitational metric. © 2003 Wiley Periodicals, Inc.     

PURE STATE APPROACH TO $C(X)×_\alpha Z_n$

ＰＵＲＥ ＳＴＡＴＥ ＡＰＰＲＯＡＣＨ ＴＯ Ｃ（ｘ）_αＺ_nＬＩＢＩＮＧＲＥＮ；ＬＩＮＱＩＮＧ（ＩｎｓｔｉｔｕｔｅｏｆＭａｔｈｅｍａｔｉｃｓ，ＡｃａｄｅｍｉａＳｉｎｉｃａ，Ｂｅｉｊｉｎｇ１０００８０，Ｃｈｉｎａ．Ｐｒｏｊｅｃｔｓｕｐｐｏｒｔｅｄｂｙｔｈ?..     

高考预效度的混合估计

用传统的预测效度估计法估计高考预测效度，其估计值往往偏低。为此，本文应用回归分析中混合估计理论提出了高考预测效度的混合估计。这种估计是预测效度的无偏估计，并解决了预测效度估计值偏低的问题。     

CONVERGENCE ON RANDOMLY TRIMMED SUMS WITH A DEPENDENT SAMPLE

§１．ＩｎｔｒｏｄｕｃｔｉｏｎａｎｄＲｅｓｕｌｔｓＬｅｔ｛Ｘｎ，ｎ１｝ｂｅａｓｅｑｕｅｎｃｅｏｆｒａｎｄｏｍｖａｒｉａｂｌｅｓｗｉｔｈａｃｏｍｍｏｎｄｉｓｔｒｉｂｕｔｉｏｎｆｕｎｃｔｉｏｎＦ（ｘ）ａｎｄｌｅｔＸｎ１Ｘｎ２…Ｘｎｎｂｅｔｈｅｏｒ...     

Coboundaries of irreducible markov operators onC(K)

LetK be a compact Hausdorff space, and letT be an irreducible Markov operator onC(K). We show that ifgεC(K) satisfies sup _N ‖Σ _j ^=0N T ^j g‖<∞, then (and only then) there existsfεC(K) with (I − T)f=g. Generalizing the result to irreducible Markov operator representations of certain semi-groups, we obtain that bounded cocycles are (continuous) coboundaries. For minimal semi-group actions inC(K), no restriction on the semi-group is needed.