A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

A novel reverse-conducting insulated-gate bipolar transistor(RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.     

Short Tm3+-doped fiber lasers with watt-level output near 2 μm

High-power operation of diode-pumped fiber lasers at wavelength near 2μm are demonstrated with short length of heavily Tm3 -doped silica glass fibers. With 7-cm long fiber, a laser at near 2 μm is obtained with the threshold of 135 mW, maximum output power of 1.09 W, and slope efficiency of 9.6% with respect to the launched power from a laser diode at 790 nm. The output stability of this fiber laser is within 5%.The dependence of the performance of fiber lasers on the operation temperature and cavity configuration parameters is also investigated.     

Tm-Doped Fibre Laser Pumped Cr^2＋：ZnSe Poly-Crystal Laser

Demonstrations of cw lasing in Cr^2＋：ZnSe poly-crystal are reported. The laser consists of a 1.7-mm-thick Cr^2＋ ：ZnSe poly-crystal disc pumped by a Tin-silica double-clad fibre laser at 2050nm. Using a concave high- reflection mirror with a radius of curvature of 500mm as the rear mirror, the laser delivers up to 1030mW of radiation around 2.367μm.     

辉光等离子体辅助化学气相沉积低温合成金刚石薄膜的研究

采用辉光放电等离子体增强化学气相沉积 (GP CVD)技术在低温条件下合成了高品质的亚微米金刚石薄膜 ,并通过对合成过程的实时发射光谱诊断确定了 [CH4 H2 ]系统参与金刚石合成反应的主要荷能粒子。对合成过程的研究表明 :采用这种技术能使电子增强热丝化学气相沉积 (EACVD)合成高品质金刚石薄膜的温度从 85 0℃降至 (340± 5 )℃ ;薄膜低温合成中的主要荷能粒子为CH3 、CH ,CH+ 、H 等 ,其中过饱和原子氢保证了高品质金刚石薄膜的合成 ;根据光诊断和探针测量的结果推断近表面辉光放电可在基片表面形成电偶极层 ,该偶极层是进行超常态反应的必要环境 ,并在低温合成中起重要作用     

耗散量子隧道系统中的形变效应与热库维数的关系

本文利用微扰及变分法研究了耗散量子隧道系统中热库声子波函数的形变效应,发现形变与热库的维数有关。随着维数降低,一方面形变效应增大,另一方面形变效应对量子隧道系统的影响变得更为显著。 关键词：     

基于CMOS图像传感器的成像系统设计

以OV 5 116CMOS图像传感器为例 ,讨论了基于CMOS图像传感器的成像系统的电路设计方法及系统设计中应注意的问题 ;并通过对CMOS图像传感器外围电路的优化设计实现了成像系统的微型化和轻量化。     

天然紫杉烷类化合物的核磁共振氢谱特征

在系统分析天然紫杉烷类化合物核磁共振氢谱的基础上，对具有不同骨架类型的天然紫杉烷类二萜化合物的核磁共振氢谱的特征进行了总结, 提供了部分不同类型的紫杉烷类化合物的核磁共振氢谱图. 这些¹H NMR特征对于紫杉烷类化合物的结构确定非常有益.     

Evaluation of stage acoustics in Seoul Arts Center Concert Hall by measuring stage support

Stage acoustics is an important characteristic for concert halls, both for the acoustic quality on stage and for the audience. However, relatively little research has been conducted into the question. This study was based on the investigation of an actual concert hall stage, that of the Seoul Arts Center Concert Hall in Korea. The stage acoustics was evaluated in the actual hall, and with two models: a 1:25 scale model and a computer model. The study was based on the stage support parameter ST1 proposed by Gade as a measure of support for individual performers [Acustica 65, 193-203 (1989)]. The variation of support was measured on the empty stage of the actual hall and in the two models. The effect of musicians on stage, the effect of moving the orchestra, the effect of ceiling height and of stage-wall profile were also investigated. Conclusions are drawn both relating to the Seoul Concert Hall stage and stages in general.     

In situ observation of NaBi(WO4)2 dendrite growth and the study on microstructure of solidification

The dendrite growth process of transparent NaBi(WO4)2 with small prandtl and high melting point was studied by using the in-situ observation system. According to the dynamic images and detailed information, there are two kinds of restriction effect on the dendrite growth, the competition between arms and branches and the convection in the melt. The dendrite growth rate was time dependent, and the rate of arm growth reached the maximum 5.8 mm/s in the diffusive-advective region and rapidly decreased in the diffusive-convective region. The growth rate of branch had the same change trends as the arm's. Based on the EPMA-EDS data of solidification structure of quenched NaBi(WO4)2 melt, it was found that there were component differences from stoichiometric concentration in the melt near the interface during the growth process.     

长周期光纤光栅:原理、制备与应用

较全面介绍了长周期光纤光栅。对比Bragg光纤光栅说明了长周期光纤光栅的特点。对其耦合机理进行了分析 ,阐明了波长选择损耗特性。介绍了长周期光纤光栅的制备方法 ,大致分之为基于非形变的制备方法和基于形变的制备方法。详细阐述其在通信、传感领域的应用 ,尤其是新型应用 :带通滤波、光上下路复用、光纤光源、偏振器件、新型传感等。并针对长周期光纤光栅对温度、应力、外部折射率敏感的特性 ,探讨了调谐性以及温度稳定性的方案