Notes on the Lightlike Hypersurfaces Along Spacelike Submanifolds

Ukrainian Mathematical Journal - In connection with the method of construction of lightlike hypersurfaces along spacelike submanifolds, we present a relation between the second fundamental form of...     

Optimization of microcrystalline silicon thin film solar cell isolation processing parameters using ultraviolet laser

This study used ultraviolet laser to perform the microcrystalline silicon thin film solar cell isolation scribing process, and applied the Taguchi method and an L₁₈ orthogonal array to plan the experiment. The isolation scribing materials included ZnO:Al, AZO transparent conductive film with a thickness of 200 nm, microcrystalline silicon thin film at 38% crystallinity and of thickness of 500 nm, and the aluminum back contact layer with a thickness of 300 nm. The main objective was to ensure the success of isolation scribing. After laser scribing isolation, using the minimum scribing line width, the flattest trough bottom, and the minimum processing edge surface bumps as the quality characteristics, this study performed main effect analysis and applied the ANOVA (analysis of variance) theory of the Taguchi method to identify the single quality optimal parameter. It then employed the hierarchical structure of the AHP (analytic hierarchy process) theory to establish the positive contrast matrix. After consistency verification, global weight calculation, and priority sequencing, the optimal multi-attribute parameters were obtained. Finally, the experimental results were verified by a Taguchi confirmation experiment and confidence interval calculation. The minimum scribing line width of AZO (200 nm) was 45.6 μm, the minimum scribing line width of the microcrystalline silicon (at 38% crystallinity) was 50.63 μm and the minimum line width of the aluminum thin film (300 nm) was 30.96 μm. The confirmation experiment results were within the 95% confidence interval, verifying that using ultraviolet laser in the isolation scribing process for microcrystalline silicon thin film solar cell has high reproducibility.     

Analysis on Patterns of Globally Coupled Phase Oscillators with Attractive and Repulsive Interactions

The Hong-Strogatz (HS) model of globally coupled phase oscillators with attractive and repulsive interactions reflects the fact that each individual (oscillator) has its own attitude (attractive or repulsive) to the same environment (mean field). Previous studies on HS model focused mainly on the stable states on Ott-Antonsen (OA) manifold. In this paper, the eigenvalues of the Jacobi matrix of each fixed point in HS model are explicitly derived, with the aim to understand the local dynamics around each fixed point. Phase transitions are described according to relative population and coupling strength. Besides, the dynamics off OA manifold is studied.     

Spectroscopic properties of Yb~(3+)-doped TeO_2–BaO–BaF_2–Nb_2O_5-based oxyfluoride tellurite glasses

A series of oxyfluoride glasses with the compositions of 75 mol% TeO2, 10 mol% Nb2O5,(15 mol%-x) BaO, x BaF2(x = 0 mol%, 5 mol%, 10 mol%, 15 mol%) doped with Yb2O3 were prepared by the melt-quenching method. Their emission cross-sections, fluorescence lifetimes, and gain properties were investigated by using the absorption spectra and the fluorescence decay curves. The results show that by substituting BaF2 for BaO, the emission cross-section decreases from 1.37 pm2 to 1.21 pm2, and the fluorescence lifetime increases from 0.71 ms to 0.96 ms. These properties indicate that this oxyfluoride tellurite glass may have potential uses as the Yb2O3-doped gain medium in a solid laser.     

Effect of hydrogen introduced by channelling implantation on the microstructures in silicon wafers

High-resolution transmission electron microscopy has been employed to study the platelet defects before annealing and the extended defects generated by annealing in the channelling-implanted silicon wafers. It has been found that there apparently appear platelet defects of quite great size and spacing at the maximum projected range of ions (R _max). Additionally, the cracks induced by annealing at 550 °C are generated around R _max instead of the average projected range of ions (R _p) as it is in the non-channelling-implanted samples. Moreover, after annealing at 1000 °C, cracks without branches and cavities arranging in a single array, different from the forked cracks and cavities arranged in several arrays in the non-channelling-implanted samples, are observed in the channelling-implanted silicon wafers. It is suggested that those special microstructure characteristics are ascribed to the channelling effect of implanted hydrogen ions.     

大脉冲电流下钨铜电极水和空气中的烧蚀特性

针对水中、空气中脉冲放电条件下金属电极烧蚀速率及烧蚀机理差异,对脉冲大电流作用下水中、空气中钨铜电极的烧蚀特性进行了对比研究。在保证放电电流波形一致性的前提下,通过采用高精度天平测量并获取了水中、空气中钨铜电极的阴、阳极烧蚀速率及总烧蚀速率,并对电极表面进行了二次电子观察和背散射电子观察分析。结果表明,大脉冲电流作用下,水中钨铜电极烧蚀较空气中更为严重,钨铜电极的烧蚀主要是金属蒸发引起的汽相侵蚀。由于水介质较空气具有不可压缩性,水中放电电弧集中,电极表面电弧斑点处电流密度和电流作用时间较空气中更为严重,同时由于水中脉冲放电时发生的高温物理化学反应,是造成水中电极烧蚀要高于空气中的根本原因。     

Modal interaction activations and nonlinear dynamic response of shallow arch with both ends vertically elastically constrained for two-to-one internal resonance

This study investigates the two-to-one internal resonance of the shallow arch with both ends elastically constraining, and the primary resonance case is considered. The full-basis Galerkin method and the multi-scale method are applied to obtain the modulation equations. It is shown that the natural frequencies of the first two modes cross/avoid to each other when the stiffness of elastic supports at two ends is the same/different. Moreover, the nonlinear modal interactions between these two modes may not/may be activated. The force/frequency-response curves are employed to explore the nonlinear response of the elastically supported shallow arch. The saddle-node bifurcation points and Hopf bifurcation points are observed in these cases. Moreover, the dynamic solutions, i.e., the periodic solution, quasi-periodic solution and chaotic solution are discussed. The numerical simulations are used to illustrate the route to chaos via period-doubling bifurcation.     

具有固有频率涨落的记忆阻尼线性系统的随机共振

研究了在内噪声、外噪声(固有频率涨落噪声)及周期激励信号共同作用下具有指数型记忆阻尼的广义Langevin方程的共振行为.首先将其转化为等价的三维马尔可夫线性系统,再利用Shapiro-Loginov公式和Laplace变换导出系统响应一阶矩和稳态响应振幅的解析表达式.研究发现,当系统参数满足Routh-Hurwitz稳定条件时,稳态响应振幅随周期激励信号频率、记忆阻尼及外噪声参数的变化存在"真正"随机共振、传统随机共振和广义随机共振,且随机共振随着系统记忆时间的增加而减弱.数值模拟计算结果表明系统响应功率谱与理论结果相符.     

掺杂对CH样品Rayleigh-Taylor不稳定性增长的影响

在神光II激光装置上进行了辐射驱动不同掺杂样品的单模Rayleigh-Taylor(RT)不稳定性实验.结果显示:与纯碳氢(CH)样品相比,掺Br的CH样品的扰动更早、更快地进入非线性区,产生二次谐波,并且掺Br比例越高,CH样品扰动进入非线性区的时间越早,相同时刻扰动的二次谐波的幅度越高.这是因为密度梯度效应抑制了二次谐波的产生,掺Br比例越高,密度梯度标长越小;同时密度梯度效应还抑制三次谐波对基模增长的负反馈,造成基模具有更大的线性增长,导致线性饱和幅值大于经典值0.1λ.     

使用α粒子轰击天然镱靶制备~(178m2)Hf同质异能素及样品γ能谱分析

178m2Hf是一种长半衰期(T1/2=31 a)、高自旋态(Iπ=16+)的Hf同质异能素.利用四川大学CS-30回旋加速器产生的30 MeV,100μA的α束流轰击天然Yb靶,通过176Yb(α,2n)反应制备178m2Hf.采用高纯Ge探测器测量未提纯样品和放化分离后的样品的γ能谱,选取178m2Hf的426,495和574 keV三个特征峰,使用高斯双峰拟合方法解谱,确定了未提纯样品中178m2Hf的含量达到1012量级,提纯后的样品中178m2Hf含量为1011量级.还对靶中其他放射性杂质核素(175Hf,172Lu,172Hf,177Lu,173Lu)的含量进行了分析.