Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation

Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in continuous-wave mode at room temperature for a 4-?m -stripe-width laser. Continuous-wave single longitudinal mode operation was maintained at a high injection current level with a wavelength of 1287.3 nm at room temperature. Single longitudinal mode operation at 1317.2 nm was achieved at twice the threshold current at 100 °C. The band gap of InGaAsN in the quantum wells at different temperatures was calculated and compared to the measured temperature-dependent laser wavelength.     

Stability of tokamak plasmas with internal transport barriers against high n ideal magnetohydrodynamic ballooning mode

A ballooning mode equation for tokamak plasma, with the toroidicity and the Shafranov shift effects included, is derived for a shift circular flux tokamak configuration. Using this equation, the stability of the plasma configuration with an internal transport barrier （ITB） against the high n （the toroidal mode number） ideal magnetohydrodynamic （MHD） ballooning mode is analysed. It is shown that both the toroidicity and the Shaftanov shift effects are stabilizing. In the ITB region, these effects give rise to a low shear stable channel between the first and the second stability regions. Out of the ITB region towards the plasma edge, the stabilizing effect of the Shaftanov shift causes the unstable zone to be significantly narrowed.     

关于半无爪图点泛圈性的两个结果

给出了半无爪图(quasi-claw-freegraph)点泛圈性方面的两个结果,作为推论,可得到D.Oberly,D.Sumner,L.Clark等人的相关结果.     

超短脉冲激光光束在一维反射型体全息光栅中的衍射

基于Kogelnik的耦合波理论,研究了在色散效应的影响下,超短脉冲激光光束在反射型体全息光栅中衍射的性质.研究给出了衍射光及透射光在频谱域及时间域的振幅及强度分布、光栅的光谱宽度及衍射效率随光栅参量及入射条件的变化.数值研究的结果表明,在光栅记录介质色散效应的影响下,衍射光束的光谱宽度减小,脉冲展宽,衍射效率降低.通过适当的选取光栅参量及入射条件,可以控制衍射和透射光束的频谱和时间强度分布,得到满意的衍射和透射光束的带宽和波形,从而可以将其应用于脉冲整形等技术中.     

用拓扑指数S_i研究碳氢化合物的沸点(Ⅲ)

定义了拓扑指数Ｓｉ（ｉ＝１，２，３，４），并选取包含双、三键、环及苯环的碳氢化合物为研究对象，计算了这些化合物的拓扑指数Ｓｉ，同时用Ｓｉ相关了它们的沸点．结果较文献值有所改善．并从Ｓｉ中筛选出了Ｓ     

用激光感生荧光法测量亚稳态原子寿命

本文用激光感生荧光法(LIF)分析了Gd原子亚稳态能级215cm~(-1),533cm~(-1),999cm~(-1)在原子束中的速度分布。由原子束轴线上两不同点上的亚稳态原子速度分布的变化得到了亚稳态原子的寿命。理论分析和实验结果表明这是一种简单、灵敏并且有效的亚稳态原子寿命测量方法。     

Synthesis of grafted poly(p‐phenyleneethynylene) with energy donor–acceptor architecture via atom transfer radical polymerization: Towards nonaggregating and hole‐facilitating light‐emitting material

In this contribution, we demonstrate a new effective methodology for constructing highly efficient and durable poly(p‐phenyleneethynylene) (PPE) containing emissive material with nonaggregating and hole‐facilitating properties through the introduction of hole‐transporting blocks into the PPE system as the grafting coils as well as building the energy donor–acceptor architecture between the grafting coils and the PPE backbone. Poly(2‐(carbazol‐9‐yl)ethyl methacrylate) (PCzEMA), herein, is chosen as the hole‐transporting blocks, and incorporated into the PPE system as the grafting coils via atom transfer radical polymerization. The chemical structure of the resultant copolymer, PPE‐g‐PCzEMA, was characterized by NMR and gel permeation chromatography, showing that the desirable copolymer was obtained with the narrow polydispersity. The increased thermal stability of PPE‐g‐PCzEMA was confirmed by thermogravimetric analysis and differential scanning calorimetry along with its macroinitiator. The optoelectronic properties of this copolymer were studied in detail by ultraviolet‐visible absorption, photoluminescence emission and excitation spectra, and cyclic voltammogram (CV). The results indicate that PPE‐g‐PCzEMA exhibits the solid‐state luminescent property dominated by individual lumophores, and also the energy transfer process from the PCzEMA blocks to the PPE backbone with a relatively higher energy transfer efficiency in the solid‐state compared to that of the solution state. Additionally, the hole‐injection property is greatly facilitated due to the presence of PCzEMA, as confirmed by CV profiles. All these data indicate that PPE‐g‐PCzEMA is a good candidate for use in optoelectronic devices. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 3776–3787, 2007