On-line DLTS investigations of vacancy related defects in low-temperature electron irradiated, boron-doped Si

Vacancy-related defects in Si are explored with deep level transient spectroscopy (DLTS). The measurements are performed on-line on irradiated p-type Si and a new trap with the signature (E_pa, _pa) = (0.18 eV, 6.5×10^-15 cm²) – only present at cryogenic temperatures – is studied. Furthermore, the bi-stable boron-vacancy complex is studied and its configuration at low temperatures is investigated and found to have the signature (E_pa, _pa) = (0.11 eV, 8.2×10^-15 cm²). PACS 71.55.Cn; 61.80.Fe; 61.82.Fk; 61.72.Ji     

O,N,N'-trialkylisoureas as mild activating reagents for N-acylsulfonamide anchors

[chemical reaction: see text]. Prior to detachment of compounds synthesized on sulfonamide based safety-catch linkers, the molecular anchor has to be activated. This is achieved by alkylation of the nitrogen atom of the N-acylsulfonamide using different established protocols. As an addition to the existing repertoire of activating reagents, we suggest the use of O,N,N'-trialkylisoureas. Besides the demonstration of the feasibility of these mild alkylating agents for this purpose, custom-tailored novel O,N,N'-trialkylisoureas prepared from electron-deficient alcohols are reported.     

Electrically forced coaxial nanojets for one-step hollow nanofiber design

The outer liquid of a two-liquid coaxial electrified jet is gelled before the onset of natural instabilities to yield hollow nanofibers. By using sol-gel chemistry, innocuous solvents such as glycerol and olive oil, and electrohydrodynamics, it is possible to make such structures in a rather straightforward manner.     

Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process

The lateral etch rate of AlGaAs in HF in the Epitaxial Lift-Off (ELO) process consists of two parts, an intrinsic and a radius-induced part. The intrinsic part is studied with a new approach in which multiple release layers are introduced in one sample. By letting an essential ELO process parameter vary over the different release layers, this parameter is examined, using only samples from one wafer. In this study, the influence of thickness, aluminium fraction, and doping concentration of the release layer on the lateral etch rate is investigated. For release layers with thicknesses below 10 nm, a positive correlation between thickness and intrinsic etch rate is found. Thicker release layers do not result in higher etch rates. Increasing aluminium fractions in the Al_xGa_1-xAs release layers result in higher etch rates. For aluminium fractions between 0.3 and 1, this effect covers almost six orders of magnitude. From the width of the V-shaped etch slits in samples that have been etched for 12 hours or more, the selectivity, i.e., the ratio of the etch rate of Al_xGa_1-xAs to GaAs, is determined. Selectivities between 4.3 and 8.6×10⁵ are found for x=0.3 and x=1, respectively. A variation in silicon doping is found to have no effect on the lateral etch rate, while increased zinc doping raises the etch rate significantly. PACS 81.05.Ea; 68.37.Hk; 81.15.Gh     

Preparation of a novel diphosphine-palladium macrocyclic complex possessing a molecular recognition site. Oxidative addition studies

A disphosphine-palladium(0) complex capable of recognising barbiturates has been prepared. Oxidative addition studies with a barbitiurate:aryl iodide conjugate provided new Pd(ii) complexes where the positioning of the Pd-bound aryl group is controlled by the molecular recognition event.     

Hesseltin A, a novel antiviral metabolite from Penicillium hesseltinei

[structure: see text] Hesseltin A 1, a novel compound of mixed polyketide-terpenoid origins was isolated from the filamentous fungus Penicillium hesseltinei. The structure and stereochemistry were determined from extensive one- and two-dimensional NMR and mass spectral data.