Photon-number oscillations in correlated light

Equations are derived, and numerical calculations performed, for the photon distribution function in correlated and squeezed light. It is shown that the distribution function oscillates as a function of the correlation and squeezing coefficients. The connection with experiments on photon counting is discussed.Translated from Preprint No. 178 of the Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow, 1988.     

Deactivation and oxidative regeneration of last-generation catalysts for deep hydrofining of diesel fuel: Comparison of properties of fresh and deactivated IK-GO-1 catalysts

Deactivation of IK-GO-1 industrial catalyst was studied under model conditions on a laboratory installation. The chemical composition, morphology of active component particles, texture characteristics, and catalytic properties of the fresh and deactivated samples were compared. A catalyst sample whose deactivation under model conditions adequately simulates industrial deactivation and which is therefore suitable for developing industrial regeneration procedure was prepared.     

Sorption properties of AG-3 activated carbon in relation to oil products

Adsorption of oil products from water on AG-3 activated carbon was studied. The adsorption isotherm was constructed and the quantitative characteristics of the sorption process on carbon were determined.

     

Incomplete active polarimetry: Measurement of the block-diagonal scattering matrix

The problem of measurement of block-diagonal scattering matrix as being part of the so-called incomplete or partial Mueller polarimetry is addressed. It has been shown that non-zero elements of the scattering matrix with block-diagonal structure can be measured using only two elliptical polarizations of input light. Optimal pairs of these polarizations are derived. Utilization of the optimal input polarizations results in halving measurement time and decreasing measurement errors by 30%.     

Effect of deformation on the metal-semiconductor phase transition in vanadium dioxide thin films

It has been demonstrated that a small plastic deformation of aluminum substrates with vanadium dioxide thin films deposited on the substrate surfaces is accompanied by the appearance of elastic stresses in the films. Depending on the deformation technique, the elastic stresses can have different signs and the range of the metal-semiconductor phase transition in VO₂ shifts toward higher or lower temperatures as compared to the equilibrium phase temperature.     

Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates

A complex study of the structural and electrical properties of nanoheterostructures containing a metamorphic barrier with a high InAs content (37–100%) in the active region have been performed by the Van der Pauw and X-ray diffraction methods. All peaks observed in the rocking curves for the samples studied (throughout the entire structure) have been revealed and identified. It is shown that, having properly chosen the design of the metamorphic buffer and the compositional gradient in it, one can obtain mobilities and concentrations of the 2D electron gas in the In _x Ga_1−x As quantum well in the heterostructures formed on GaAs substrates that are comparable with the corresponding values for the nanoheterostructures grown on InP substrates. It is established that the mobility and concentration of 2D electron gas depend both on the metamorphic barrier design and on the structural quality of heterostructure as a whole.     

Structural and electrical properties of quantum wells with nanoscale InAs inserts in InyAl1 ? yAs/InxGa1 ? xAs heterostructures on InP substrates

A complex study of the effect ofintroduction of nanoscale InAs inserts of different thicknesses into an In_0.53Ga_0.47As quantum well on the electrical properties and structural features of In_0.50Al_0.50As/In_0.53Ga_0.47As/In_0.50Al_0.50As nanoheterostructures with bilateral δ-Si doping grown on InP substrates has been performed. The layers of nanoheterostructures with a weak lattice mismatch are found to be equally (cube-on-cube) oriented. The introduction of a nanoscale InAs insert leads to an increase in mobility. At an insert thickness of about 1.8 nm, the effect of increasing mobility is saturated due to structural deterioration. The segregation of the second (apparently, wurtzite) phase is revealed; this process, as well as the formation of other defects in the nanoheterostructure layers, is due to local strains caused by variations of the indium content in the layers.     

Free radicals in benzoyl peroxide/amine initiating system

In an ESR study of donor-acceptor pairs consisting of benzoyl peroxide and tetramethyl-p-phenylenediamine or 2,4,6-tri-tert-butylaniline, two radicals were detected — the cation radical of tetramethyl-p-phenylenediamine and the 2,4,6-tri-tert-butylaminyl radical. As in Russian original; this term is used throughout article, but is probably a misprint for tert-butylanilinyl — Translator. Branch of the M. V. Lomonosov Moscow State University in the city of Ul’yanovsk, 42L Tolstoy Street, Ul’yanovsk 432700, Russia. Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 33, No. 2, pp. 88–90, March–April, 1997.     

Ferromagnetic films with magnon bandgap periodic structures: Magnon crystals

A new type of photonic crystals is proposed. The new crystals have a forbidden gap in the microwave spectrum of magnetostatic spin waves, and, by analogy with photonic crystals, they are called magnon crystals. Specimens of such crystals were fabricated on the basis of yttrium iron garnet films. The surfaces of ferromagnetic films containing two-dimensional etched hole structures were studied by atomic force and magnetic force mag-netometry. The propagation of spin waves through the magnon crystals was investigated.