Influence of acceptor and donor adsorbates (CO,K, NH3) on Pt surface core-level shifts

4f core-level shifts have been measured for clean surfaces of Pt(111), Pt(331), and Pt(557). Surface peaks due to terrace sites are shifted toward lower binding energy (0.32 ± 0.05 eV) from the bulk peak, whereas peaks from step atoms are shifted by 0.58 ± 0.05 eV also to lower binding energy. The intensity ratios for the two sites differ considerably between the stepped Pt surfaces. Chemisorption of carbon monoxide on the Pt(331) surface is preferential to step sites, with a Pt 4f binding energy shift of ～ 1.29 eV toward higher binding energy. Chemisorption of potassium and ammonia also produces Pt 4f surface shifts which are at higher binding energy than the bulk peak. These experiments do not support the concept of electron donation by these adsorbates into metal d orbitals. The results are discussed in view of, and supported by, tight-binding LCAOMO calculations of potassium and ammonia interacting with a Pt(111) thin film.     

Photoemission studies of clean and oxygen-covered Pt 6(111) × (100)

Employing the enhanced sensitivity obtained by using synchrotron radiation near the Cooper minimum for the 5d valence electrons, we have located the oxygen 2p and 2s levels for oxygen chemisorbed on a Pt 6(111) × (100) crystal. We find the oxygen 2p level located ?6 eV with a FWHM of 3 eV and the 2s at ?21.6 eV. A factor of four difference in saturation coverage is measured between temperatures of 300 and 120 K, but the position and width of the 2p level is independent of temperature. We observe also the 1b₁ orbital of weakly adsorbed H₂O molecules, which has pure O 2p parentage; from the intensity of this orbital, we are able to suggest why it is difficult to observe the oxygen 2p signal at low photon energies. In addition, we note a strong preferential attenuation in the Pt states near E_f for the adsorbed H₂O in spite of the weak nature of the bond.     

Photoemission studies of the electronic structure of III–V semiconductor surfaces

The photoemission technique using synchroton radiation in the photon energy range 5–450 eV has been applied to the study of the electronic structure of some III–V semiconductor surfaces, prepared by cleavage in situ under ultrahigh vacuum conditions, ? 10^?11 Torr. For p-type GaAs(110), the Fermi level is pinned at the top of the valence band and thus no filled surface states extend into the band-gap. The situation is more complicated for n-type GaAs(110), where band bending easily can be introduced by extrinsic effects (impurities, cleavage quality, etc.) and push the Fermi level down to about midgap. Chemical shifts of inner core levels (3d for Ga and As) are used to obtain information on the bonding site of oxygen on the (110) surface. GaAs(110) can be exposed to atmospheric pressure of molecular oxygen without breaking the bonds between the surface atoms and the bulk. Oxygen is predominantly bonded to the As atoms on the surface. The oxidation behavior is strikingly different for GaSb(110) with formation of gallium and antimony oxides on the surface directly upon oxygen exposure. Heavier oxidation of GaAs(110) and breaking of the surface bonds will also be reported.     

Intrinsic surface binding energy shifts in Yb metal

We report on the four-peak structure observed in the region of 4f photoemission in Yb metal, using synchrotron radiation in the energy range 70–200 eV. We conclude, contrary to previous reports, that the doublet associated with surface emissions results from an intrinsic surface shift on clean regions of the surface. We also demonstrate that the observed structure is consistent with earlier XPS measurements, and we set an upper limit on the width of the bulk peaks.     

Systematisierung der Tieftemperaturmodifikationen homologer Thallium(I)-Salze aliphatischer Carbonsäuren durch ihre Mischbarkeitsbeziehungen

By studying the miscibility in 12 binary systems of the thalliumsoaps TlC₉ to TlC₁₈, TlC₂₀ and TlC₂₂ the low-temperature modifications were classified. The members with shorter hydrocarbon chains up to TlC₁₆ have the following phase sequence: phase II, phase I, neat-phase, isotropic liquid, whereas from TlC₁₇ the sequence is: phase II, neatphase, isotropic liquid. Modifications of the same type are indicated by identical symbols.     

Surface segregation and surface electronic interactions in PtCu

Photoemission and Auger electron spectroscopy on Pt_0.98Cu_0.02 show that the (110) face has over twice as much Cu surface segregation as the (111) face. The Cu 3d-derived surface “density of states” differ strikingly in peak shape and in width (by 0.5 eV). The centroids, compared with bulk Cu d states, are shifted by more than 0.3 eV towards the Fermi level. This is the first experimental correlation between surface segregation and surface bonding.     

Ad-atom interactions with III-V semiconductor surfaces

Photoemission techniques (core level, valence band and partial yield spectroscopies) using synchrotron radiation as the excitation source have been applied to study the changes in the surface electronic structure of the (110) cleavage face of III-V semiconductor surfaces as a function of different ad-atom coverages. In this paper we concentrate on Au overlayers on GaSb and in particular address the problem of the mechanism for Fermi level pinning and the formation of Schottky barrier heights. It appears that the Fermi level pinning is fully established at a small fraction of a monolayer coverage. Core level spectroscopy gives evidence for a strong metal-semiconductor interaction leading to decomposition of GaSb at the interface. The experimental results form the basis for proposing a new model for the Schottky barrier based on defect states at the interface.     

Convergence of a lattice model of the boltzmann equation

It is shown that the solutions of a (spatially) discrete model of the Boltzmann equation converge in a weak sense as the lattice spacing approaches zero. The method follows a compactness argument of Arkeryd.