Amorphous fluorescent organic emitters for efficient solution-processed pure red electroluminescence: synthesis, purification, morphology, solid-state photoluminescence, and device characterizations

New soluble and intrinsic amorphous red emitters 1 and 2 were obtained by Suzuki coupling. Due to the close molecular polarities, separation of target products from monocoupling impurities presents a challenge. The results showed highly pure 2 would be a potentially valuable fluorophore for solution-processed pure red electroluminescence in terms of visual sensitivity with respect to 1.     

Dithienobenzothiadiazole‐Based Conjugated Polymer: Processing Solvent‐Relied Interchain Aggregation and Device Performances in Field‐Effect Transistors and Polymer Solar Cells

DTfBT‐Th₃, a new conjugated polymer based on dithienobenzothiadiazole and terthiophene, possesses a bandgap of ≈1.86 eV and a HOMO level of −5.27 eV. Due to strong interchain aggregation, DTfBT‐Th₃ can not be well dissolved in chloro­benzene (CB) and o‐dichlorobenzene (DCB) at room temperature (RT), but the polymer can be processed from hot CB and DCB solutions of ≈100 °C. In CB, with a lower solvation ability, a certain polymer chain aggregation can be preserved, even in hot solution. DTfBT‐Th₃ displays a field‐effect hole mobility of 0.55 cm² V⁻¹ s⁻¹ when fabricated from hot CB solution, which is higher than that of the device processed from hot DCB (0.16 cm² V⁻¹ s⁻¹). In DTfBT‐Th₃‐based polymer solar cells, a good power conversion efficiency from 5.37% to 6.67% can be achieved with 150−300 nm thick active layers casted from hot CB solution, while the highest efficiency for hot DCB‐processed solar cells is only 5.07%. The results demonstrate that using a solvent with a lower solvation ability, as a “wet control” process, is beneficial to preserve strong interchain aggregation of a conjugated polymer during solution processing, showing great potential to improve its performances in optoelectronic devices.

     

High-performance, all-solution-processed organic nanowire transistor arrays with inkjet-printing patterned electrodes

Organic nanowire (NW) transistor arrays with a mobility of as high as 1.26 cm(2)·V(-1)·S(-1) are fabricated by combining the dip-coating process to align the NW into arrays with the inkjet printing process to pattern the source/drain electrodes. A narrow gap of ~20 μm has been obtained by modifying the inkjet process. The all-solution process is proven to be a low-cost, high-yield, simple approach to fabricating high-performance organic NW transistor arrays over a large area.