Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser

A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N₂O and SiH₄, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO _x films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase.     

Synthesis of 3-hydrazino-6-tert-butyl-1,2,4-triazolo[3,4-c]-1,2,4-triazin-5-one

3-Hydrazino-6-tert-butyl-1,2,4-triazolo[3,4,c]-1,2,4-triazin-5-one was synthesized by the reaction of a substituted 4-(N,N-dimethylcarbamoyl)-3-thioxo-1,2,4-triazine with hydrazine. The spectral characteristics and the proposed reaction mechanism are discussed.The Sumy State University, Sumy 244007. Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 9, pp. 1258–1260, September, 1994. Original article submitted September 14, 1994.     

Diffusing particles with electrostatic repulsion

Summary. We study a diffusion model of an interacting particles system with general drift and diffusion coefficients, and electrostatic inter-particles repulsion. More precisely, the finite particle system is shown to be well defined thanks to recent results on multivalued stochastic differential equations (see [2]), and then we consider the behaviour of this system when the number of particles goes to infinity (through the empirical measure process). In the particular case of affine drift and constant diffusion coefficient, we prove that a limiting measure-valued process exists and is the unique solution of a deterministic PDE. Our treatment of the convergence problem (as ) is partly similar to that of T. Chan [3] and L.C.G. Rogers - Z. Shi [5], except we consider here a more general case allowing collisions between particles, which leads to a second-order limiting PDE. Received: 5 August 1996 / In revised form: 17 October 1996     

Strain of an anisotropic monolith during the excavation of minerals

We solve the problem of the normal and transverse shear in an anisotropic monolith during the excavation of a stratum of solid mineral. It is shown that the stress perturbation field in the rock is due to the whole extent of the excavated portion of the stratum. We study way in which the friction that arises between the interacting rock of the roof and the floor influences the strain and stress fields as the front of the excavation evolves, and also the influence of the extent of the excavated portion of the rock stratum on the magnitude of the accumulated tangential displacements. Three figures. Translated fromTeoreticheskaya i Prikladnaya Mekhanika, No. 25, 1995, pp. 62–69.     

Photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity

We report new results on the diffraction properties of photoinduced gratings in InGaAs/InGaAsP MQW structures. The original feature of this device is that the QWs are enclosed in an asymmetric Fabry–Perot microcavity in order to increase the diffraction efficiency. We observe oscillations in the diffraction efficiency due to resonant effects in the microcavity. The experimental spectra are compared with theory. Diffraction efficiency at 1.55 μm attains a maximum value of 2.7% at a write beam fluence of 260 μ J cm⁻², and then decreases at higher fluences. We explain this phenomenon by an absorption saturation at high excitation.