Three-term polynomial progressions in subsets of finite fields

We prove that the group of diffeomorphisms of the interval [0, 1] contains surface groups whose action on (0, 1) has no global fix point and such that only countably many points of the interval (0, 1) have non-trivial stabiliser.     

Boron(iii) β-diketonate-based small molecules for functional non-fullerene polymer solar cells and organic resistive memory devices

A class of acceptor–donor–acceptor chromophoric small-molecule non-fullerene acceptors, 1–4, with difluoroboron(iii) β-diketonate (BF₂bdk) as the electron-accepting moiety has been developed. Through the variation of the central donor unit and the modification on the peripheral substituents of the terminal BF₂bdk acceptor unit, their photophysical and electrochemical properties have been systematically studied. Taking advantage of their low-lying lowest unoccupied molecular orbital energy levels (from −3.65 to −3.72 eV) and relatively high electron mobility (7.49 × 10⁻⁴ cm² V⁻¹ s⁻¹), these BF₂bdk-based compounds have been employed as non-fullerene acceptors in organic solar cells with maximum power conversion efficiencies of up to 4.31%. Moreover, bistable resistive memory characteristics with charge-trapping mechanisms have been demonstrated in these BF₂bdk-based compounds. This work not only demonstrates for the first time the use of a boron(iii) β-diketonate unit in constructing non-fullerene acceptors, but also provides more insights into designing organic materials with multi-functional properties.

Boron(iii) β-diketonates have been demonstrated to serve as multi-functional materials in NFA-based OPVs and organic resistive memories.     

A New Approach to Develop a Standardized Method for Simultaneous Analysis of Astragaloside IV and Formononetin in Radix Astragali by High-Performance Thin-Layer Chromatography

JPC – Journal of Planar Chromatography – Modern TLC - A new high-performance thin-layer chromatographic (HPTLC) method has been developed for the simultaneous estimation of...     

基于响应面法的直拉硅单晶生长工艺参数优化方法

在直拉法制备硅单晶的过程中,要得到优质的晶体必须建立合理的温度分布,而单晶炉内热场的分布与工艺参数的设定密切相关.其中以晶体转速、坩埚转速和拉速等三个工艺参数对热场分布的影响尤为显著.为了确定最佳热场分布下晶转、埚转及拉速的设定值,本文采用响应面算法通过方程拟合、回归分析等步骤求解这三个工艺参量与温度梯度之间的最佳函数模型,并在该模型下同时对这三个工艺参量进行优化分析,且通过仿真实验和拉晶实验表明该方法的有效性.