Die Methoden zur direkten Messung des osmotischen Drucks

Ohne Zusammenfassung     

Bergman kernel asymptotics for generalized Fock spaces

Letm(t)dt be a positive measure onR ⁺. We investigate the relations among the growth ofm, the growth of its moment sequence {y_n}, the growth of its Bergman kernel functionk x=Σγ{_n/^-1}x ⁿ, and the growth of the kernel function associated to the measureK(t) ⁻¹m(t) dt. For a large class of measures, we find that these quantities satisfy asymptotic relations similar to the simple exact relations which hold in the model casem(t)=e ⁻¹. Supported in part by a grant from the National Science Foundation.     

Ion beam etching of high resolution structures in Ta2O5 for grating-assisted directional coupler applications

An investigation on thin Ta₂O₅ films patterning using argon ion beam etching (IBE) is presented. The etch rates are characterised by varying the angle of incidence of the beam onto the substrate. Ta₂O₅ gratings with a period of 2.2 μm (1.1 μm linewidth) and 0.25 μm thickness are fabricated using an angle of incidence of 0°. The resulting Ta₂O₅ grating cross sectional profiles are analysed using AFM and SEM imaging. A fabrication method is thus demonstrated which could be used to implement wavelength selective gratings in applications such as grating-assisted directional couplers (GADCs).     

Control of holding currents in amorphous threshold switches

It is usually assumed that the holding current of an amorphous semiconductor threshold switch is not strongly dependent on the circuit surrounding the switch. This paper shows that the holding current is in fact controlled by both the series resistance and the parallel capacitance, according to two simple inequalities. In order to obtain low holding currents a large series resistor and minimum parallel capacitance are required, and in this way a holding current of 10 μA has been observed. Data are also presented on the effects of device dimensions and temperature on the on-state I-V curves and holding current.     

Beauveria bassiana ATCC 7159 Containsan L-Specific a-Amino Acid Benzamidase

 Biotransformation of a series of racemic N-benzoyl α-amino acids by the fungus Beauveria bassiana ATCC 7159 results in isolation of the corresponding D-amino acid benzamides in high enantiomeric purity and yield.     

Growth of carbon nanotubes from waste blast furnace gases at atmospheric pressure

Carbon emissions from industrial sources are of major global concern, especially contributions from the steel manufacturing process which accounts for the majority of emissions. Typical blast furnace gases consist of CO₂ (20‐25%), CO (20‐25%), H₂ (3‐5%) and N₂ (40‐50%) and trace amounts of other gases. It is demonstrated that gas mixtures with these compositions can be used at atmospheric pressure to grow carbon nanotubes (CNTs) by chemical vapor deposition (CVD) on to steel substrates, which act as catalysts for CNT growth. Computational modelling was used to investigate the CNT growth conditions inside the CVD chamber. The results show that industrial waste pollutant gases can be used to manufacture materials with significant commercial value, in this case CNTs.     

Solution and structural characterization of iron(II) complexes with ortho-halogenated phenolates: insights into potential substrate binding modes in hydroquinone dioxygenases

The new ligand cis,cis-1,3,5-tris-(E)-(tolylideneimino)cyclohexane (TACH-o-tolyl) forms a 1:1 complex with iron(II). Addition of substituted phenolates forms 1:1:1 ligand:iron:phenolate complexes, which have been characterized both in the solid state and in solution. There is complete binding of the phenolate to the complex only when there are ortho-halogens on the phenolate. The tertiary complexes with ortho-halo-substituted phenolates exhibit short Fe-halogen distances, and the complex containing a non-coordinating but similarly sized ortho-methyl phenolate has a significantly different conformation and coordination geometry. Therefore, it is likely that the metal-halogen interaction stabilizes the complexes. The iron(II)-halogen interaction in these complexes may explain the substrate specificity of PcpA and LinE, enzymes that preferentially bind phenols and hydroquinones containing halogen substituents in ortho positions.     

Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition

The reaction of trimethyl aluminum on the group III rich reconstructions of InAs(0 0 1) and In(0.53)Ga(0.47)As(0?0?1) is observed with scanning tunneling microscopy/spectroscopy. At high coverage, a self-terminated ordered overlayer is observed that provides the monolayer nucleation density required for subnanometer thick transistor gate oxide scaling and removes the surface Fermi level pinning that is present on the clean InGaAs surface. Density functional theory simulations confirm that an adsorbate-induced reconstruction is the basis of the monolayer nucleation density and passivation.