Measurement of the W boson mass using electrons at large rapidities

We report a measurement of the W boson mass based on an integrated luminosity of 82 pb(-1) from p&pmacr; collisions at sqrt[s] = 1.8 TeV recorded in 1994-1995 by the D0 detector at the Fermilab Tevatron. We identify W bosons by their decays to enu, where the electron is detected in the forward calorimeters. We extract the mass by fitting the transverse mass and the electron and neutrino transverse momentum spectra of 11 089 W boson candidates. We measure M(W) = 80.691+/-0.227 GeV. By combining this measurement with our previously published central calorimeter results from data taken in 1992-1993 and 1994-1995, we obtain M(W) = 80.482+/-0.091 GeV.     

Small-angle muon and bottom-quark production in p&pmacr; collisions at radicals = 1.8 TeV

This Letter describes a measurement of the muon cross section originating from b-quark decay in the forward rapidity range 2.4<| y(&mgr;)|<3.2 in p&pmacr; collisions at sqrt[s] = 1.8 TeV. The data used in this analysis were collected by the D0 experiment at the Fermilab Tevatron. We find that next-to-leading-order QCD calculations underestimate b-quark production by a factor of 4 in the forward rapidity region.     

Nitrogen as carrier gas for the growth of ZnSe and ZnSe:N in plasma enhanced metalorganic vapor phase epitaxy

For the precursor combination dimethylzinc-triethylamine and ditertiarybutylselenide the use of nitrogen carrier gas was investigated for the metalorganic vapor phase epitaxy (MOVPE) of ZnSe and ZnSe:N. The nitrogen doping was carried out with a separate nitrogen flow which was activated by a dc-plasma. In the photoluminescence spectra of undoped layers grown at 340°C with a VI/II ratio of 0.18 only excitonic emissions, separated into free and donor bound excitons, can be observed. The background carrier concentration was of the order of 1 × 10¹⁶ cm⁻³. The growth rate of epilayers grown in nitrogen is reduced by about 75% in comparison to the value obtained by using hydrogen as carrier gas. The doping can be regulated by the dopant flow and by the total pressure in the reactor. With increasing flow of plasma activated nitrogen and a reduced total pressure, the PL spectra showed broadened DAP emission without excitonic emissions. The electrical and optical properties obtained with nitrogen carrier gas are comparable with the results obtained with hydrogen carrier gas. So far, no p-type conductivity was measured. Therefore, the problem of compensation of p-type conductivity of ZnSe : N doped by dc-plasma enhanced N₂ was not solved by the use of N₂ carrier gas.     

Dissociation of N2 on a Si(111)-7x7 Surface at Room Temperature

We demonstrate that the strong N₂ bond can be efficiently dissociated at low pressure and ambient temperature on a Si(111)-7x7 surface. The reaction was experimentally investigated by scanning tunnelling microscopy and X-ray photoemission spectroscopy. Experimental and density functional theory results suggest that relatively low thermal energy collision of N₂ with the surface can facilitate electron transfer from the Si(111)-7x7 surface to the π*-antibonding orbitals of N₂ that significantly weaken the N₂ bond. This activated N₂ triple bond dissociation on the surface leads to the formation of a Si₃N interface.