Kinetic behaviour of aluminum naphthenate/benzene system in process of gelation and degradation

The kinetic behaviour of aluminum naphthenate/benzene system in the process of gelation and degradation was systematically studied. The results obtained from the kinetic experiments indicated that the gelation stage was in accordance with a kinetic model of an auto-catalytic first-order reaction, and the degradation stage was a simple first-order reaction. The rate constants in these two stages at various temperaturs were measured. And the determined apparent activation energies for the gelation stage and for the degradation stage are 27.5±2.0 and 37.7±2.3 kJ/mol, respectively.     

Periodic solutions for a quasilinear non-autonomous second-order system

In this paper, a quasilinear second-order system with periodic boundary conditions is studied. By the least action principle and classical theorems of variational calculus, existence results of periodic solutions are obtained.     

Christoffel functions and mean convergence for Lagrange interpolation for exponential weights

For exponential weights, a necessary condition of weighted mean convergence for Lagrange interpolation is given.     

周期性分层介质高反射区范围的分析与估计

对于具有周期单元的分层介质材料高反射区的波长范围，提供一种简明的估计分析方法.基于Floquet定理，分析了有限周期单元分层介质的光子带隙特性，给出分层介质的高反射区波长范围.讨论了分层介质高反射区和周期单元禁带之间的关系.计算表明，高反射区和周期单元禁带的中心波长彼此一致.并且，随着分层介质周期单元数的增多，高反射区的深度和带宽就越接近于周期单元禁带的深度和宽度.最后，讨论周期分层介质的光子带隙特性与入射角及其与极化的变化关系. 关键词： 分层介质 带隙特性 周期单元 高反射区     

新超导体MgCNi3的虚晶掺杂研究

用全势线性缀加平面波方法,考虑局域自旋密度近似研究虚晶掺杂MgCNi3的超导电性和磁性.计算了自旋极化能带结构、体弹性模量和它对压力的导数、原子磁矩 m 及其变化率.计算结果表明,对于电子掺杂的Mg1-xAlxCNi3(0≤x≤0.5), 超导电性和磁涨落随掺杂量的增加逐渐减小.空穴掺杂的Mg1-xNaxCNi3,在x＝0.12处出现铁磁相变,超导电性消失.在MgCNi3少量空穴掺杂区域(0≤x<0.12),表现为超导与磁涨落共存的不稳定状态.     

排列形状及阵列数目对纳米导线阵列场发射性能的影响

为了进一步研究纳米导线阵列的排列形状以及阵列数目对其场发射行为的影响，利用镜像悬浮球模型对正方形以及六边形排列的纳米导线阵列的场发射行为进行计算与模拟，近似的得到纳米导线阵列的场发射增强因子满足如下的变化趋势：β=h/ρ(1/1+W)+1/2(1/1+W)²+3,其中h为纳米导线的高度，ρ为纳米导线的半径，W是以R为自变量的函数，R为纳米导线阵列的间距.结果显示纳米导线阵列的排列形状对其场发射性能的影响较小，而阵列间距则是影响场发射性能的关键因素：当R<R₀时，场发射增强因子随着阵列间距的减小而急剧减小；当R>R₀时，场发射增强因子基本不变，其中R₀为导线阵列场发射的最佳间距.进一步研究表明改变纳米导线阵列的数目基本不会改变阵列的场发射性能随间距的变化趋势，但是随着阵列数目的增加，R₀会有一定程度的减小，场发射增强因子也会降低. 关键词： 纳米导线 场发射 增强因子 阵列数目     

The Generalized West Decomposition of Operators and Other Compact Perturbation Problems

This paper introduces the concept of the generalized Riesz operators and the concept of the generalized West decomposition of a general operator which generalizes the definition of the West decomposition of Riesz operators, and proves that the following three statements are equivalent on a general Banach space： （a） Every generalized Riesz operator has the generalized West decomposition; （b） Every operator makes strong Stampfli theorem true; Every operator has Apostol＇s compact correction.     

Crystal field analysis of the magnetization curves of R2Fe17 and R2Fe17H3 (R=Tb,Ho,Er)

In this paper the values of the crystalline-electric-field parameters A_nm for R₂Fe₁₇ and R₂Fe₁₇H₃ (R=Tb,Ho,Er) are evaluated by fitting calculations to the magnetization curves measured on the single crystal at several temperatures. The fitted A_nm for R₂Fe₁₇ are strikingly different from those for the corresponding R₂Fe₁₇H₃. The energy gaps between the lowest four energy levels for Ho ions in Ho₂Fe₁₇₂ can be reproduced by using the fitted A_nm and exchange field 2μ_BH_ex, which estimated from the fit of the temperature dependence of the spontaneous magnetization combined with inelastic neutron scattering experiment.