Spreading Code Design Using a Global Optimization Method

The performance of a code division multiple access system depends on the correlation properties of the employed spreading code. Low cross-correlation values between spreading sequences are desired to suppress multiple access interference and to improve bit error performance. An auto-correlation function with a distinct peak enables proper synchronization and suppresses intersymbol interference. However, these requirements contradict each other and a trade-off needs to be established. In this paper, a global two dimensional optimization method is proposed to minimize the out-of-phase average mean-square aperiodic auto-correlation with average mean-square aperiodic cross-correlation being allowed to lie within a fixed region. This approach is applied to design sets of complex spreading sequences. A design example is presented to illustrate the relation between various correlation characteristics. The correlations of the obtained sets are compared with correlations of other known sequences.     

Capacity Constrained Transit Assignment with Common Lines

This paper proposes the use of absorbing Markov chains to solve the capacity constrained transit network loading problem taking common lines into account. The approach handles congested transit networks, where some passengers will not be able to board because of the absence of sufficient space. The model also handles the common lines problem, where choice of route depends on frequency of arrivals. The mathematical formulation of the problem is presented together with a numerical example. This revised version was published online in July 2006 with corrections to the Cover Date.     

Convergence of multistep discretizations of DAEs

Standard ODE methods such as linear multistep methods encounter difficulties when applied to differential-algebraic equations (DAEs) of index greater than 1. In particular, previous results for index 2 DAEs have practically ruled out the use of all explicit methods and of implicit multistep methods other than backward difference formulas (BDFs) because of stability considerations. In this paper we embed known results for semi-explicit index 1 and 2 DAEs in a more comprehensive theory based on compound multistep and one-leg discretizations. This explains and characterizes the necessary requirements that a method must fulfill in order to be applicable to semi-explicit DAEs. Thus we conclude that the most useful discretizations are those that avoid discretization of the constraint. A freer use of e.g. explicit methods for the non-stiff differential part of the DAE is then possible.Dedicated to Germund Dahlquist on the occasion of his 70th birthdayThis author thanks the Centro de Estadística y Software Matemático de la Universidad Simón Bolivar (CESMa) for permitting her free use of its research facilities.Partial support by the Swedish Research Council for Engineering Sciences TFR under contract no. 222/91-405.     

Characterization of Metallo Bis(terpyridine) Diblock Polymers by Nonaqueous Capillary Zone Electrophoresis

A method of nonaqueous capillary zone electrophoresis (CZE) has been developed to characterize block (co)polymers of poly(ethylene oxide) and poly(styrene) containing metallo bis(terpyridine) complexes as bridging units. Specific CZE separation conditions had to be applied, with barium perchlorate dissolved in N-methylformamide (NMF) as background electrolyte and OV-1701-OH deactivated capillaries. For detection UV absorption was measured at a wavelength of 316 nm. Metallo diblock polymers with molecular weights up to 30,000 Da could be analyzed by the proposed nonaqueous CZE method. Experiments performed with polymeric compounds containing Fe, Ni or Ru as central metal ions showed that their electrophoretic mobilities were independent of the type of metal ion. Therefore, the data on the size of the polymeric compounds could be obtained using just one set of calibration standards. Polydispersities of the samples calculated from the experimental results were in correlation with the polydispersities of the polymers used in the synthesis of the metallo diblock polymers. Several polymeric samples contained metallo mono(terpyridine) complexes as impurities. These by-products could be separated from the main product. With symmetrical diblock polymers only one by-product was detected, while with an asymmetric diblock polymer two types of mono-complexes were found. The amount of the mono-complexes present as impurities was dependent on the type of central metal ion (Ni > Fe >> Ru).     

On α-I-continuous and α-I-open functions

Montgomery and Vaughan improved a theorem of Erd?s and Fuchs for an arbitrary sequence. Sárközy extended this theorem of Erd?s and Fuchs for two arbitrary sequences which are "near" in a certain sense. Using the idea of Jurkat (differentiation of the generating function), we will extend similarly the result of Montgomery and Vaughan for "sufficiently near" sequences.     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.