Competition between band and hopping carrier transport in Ge : Mn thin films

Regularities of hole transport and its correlation with percolation magnetism caused by localized carriers simultaneously involved in the formation of the magnetic and electrical properties of Ge: Mn thin films are investigated. It is established that at temperatures of T > 22 K the activationless band carrier transport occurs in the Ge: Mn samples (2 at % Mn). At low temperatures, the hopping mechanism with a variable hopping length works.     

Synthesis, structures, and conductivities of salts (BEDT-TTF)[9,9′(12′)-I2-3,3′-Co(1,2-C2B9H10)2] and (TTF)[9,9′,12,12′-I4-3,3′-Co(1,2-C2B9H9)2]

The radical cation salts of tetrathiafulvalene (TTF) and bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) with iodo derivatives of cobalt bis(dicarbollide), (TTF)[9,9′,12,12′-I₄-3,3′-Co(1,2-C₂B₉H₉)₂] and (BEDT-TTF)[9,9′(12′)-I₂-3,3′-Co(1,2-C₂B₉H₁₀)₂], respectively, were synthesized and their crystal structures were determined. The introduction of iodine atoms into the lower rim of the dicarbollide ligands, unlike the substitution at the upper rim, leads to insignificant changes in the crystal structure and the conductivity of the radical cation salts compared to the analogous salts based on unsubstituted cobalt bis(dicarbollide).     

Large magnetic anisotropy of chromium(III) ions in a bis(ethylenedithio)tetrathiafulvalenium salt of chromium bis(dicarbollide), (ET)<Subscript>2</Subscript>[3,3′-Cr(1,2-C<Subscript>2</Subscript>B<Subscript>9</Subscript>H<Subscript>11</Subscript>)<Subscript>2</Subscript>]

The synthesis of a radical-cation salt based on a derivative of tetrathiafulvalene, (ET)₂[3,3′-Cr(1,2-C₂B₉H₁₁)₂] (ET?=?bis(ethylenedithio)tetrathiafulvalenium), was accomplished by electrochemical anodic oxidation of ET in the presence of (Me₄N)[3,3´-Cr(1,2-C₂B₉H₁₁)₂] in the galvanostatic regime. An electric conductivity σ (293 K)?=?7 × 10^?3 Ohm^?1 cm^?1 with semiconductor activation energy E_a???0.1 eV in the range of 127–300 K was observed. The crystal structure of (ET)₂[3,3′-Cr(1,2-C₂B₉H₁₁)₂] was determined by X-ray diffraction at 173 K, revealing the presence of structural tetramers in radical-cation stacks. The magnetic properties of the complex were investigated in the temperature range 1.8–300 K using magnetometry and EPR, showing that the magnetic structure of (ET)₂[3,3′-Cr(1,2-C₂B₉H₁₁)₂] consists of two independent magnetic subsystems. Cation radicals form a rectangular magnetic lattice in the ab-plane with significant antiferromagnetic exchange interactions. The chromium bis(dicarbollide) anions are characterized by unusually strong positive zero-field splitting of the Cr(III) ions, which was confirmed by ab initio calculations.     

A complex of buckminsterfullerene with sulfur,C60·2S8: synthesis and crystal structure

The C₆₀·2S₈ complex was prepared by reaction of buckminsterfullerene C₆₀ with sulfur in trichloroethylene and its single-crystal X-ray structure was studied at room temperature. Crystals of this compound are monoclinic, space groupC 2/c, a=20.90(1),b=21.10(1),c=10.537(9) Å, =111.29(7)°,Z=4,d _calc=1.89 g·cm^–3. The crystal structure of the C₆₀·2S₈ complex consists of packed fullerene molecules that form hexagonal channels along thec axis with eight-membered crown-shaped S₈ cyclic molecules inside the channels. The distances between the centers of neighboring fullerene molecules are 10.036(7), 10.636(7), and 10.537(9) Å. Each C₆₀ molecule is linked to eight S₈ molecules with ten shortened intermolecular contacts C...S 3.41(1)–3.52(2) Å. The average values of the C=C and C-C bond lengths are 1.32(3) and 1.47(3) Å, which attest to a significant degree of localization of electron density in the c₆₀ molecule.Translated from Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 2, pp. 262–266, February, 1994.     

Investigation of the electrical resistance of single-walled carbon nanotube films in the temperature range 4.2–290 K

Electrical resistance of films made of the source material and purified HiPCO and Arc single-walled carbon nanotubes (SWCNTs) with a thickness of 20−40 μm is 2.4 to 45 Ω (electrical conductivity of 0.42 × 10³ to 5.03 × 10³ S/m) at room temperature. The films have been formed by vacuum microfiltration of SWCNT suspensions in toluene and characterized by Raman and X-ray photoelectron spectroscopy and scanning electron microscopy. The conductivity of the films at room temperature depends on the type and degree of purity of the material of nanotubes. The resistance of the films decreases with the increasing temperature over the range of 4.2–290 K, and the rate of the step-down decreases with increasing purity of the material of the nanotubes. The conductivity of the films is semiconducting in character, and the electron transport is consistent with three-dimensional hopping conductivity.