Survey of plasmonic gaps tuned at sub-nanometer scale in self-assembled arrays

Frontiers of Physics - Recent progress in the observation of surface-enhanced Raman scattering (SERS) is reviewed to examine the possibility of finding a novel route for the effective...     

次可加测度压的一个注记

利用非紧集上拓扑压的定义,对任意一个不变测度和一族紧度量空间上的次可加势函数,引进了一个新的次可加测度压的定义.在某些假设下,对任意一个遍历测度,证明了新定义的次可加测度压等于用生成集定义的次可加测度压.进一步得到了一个逆变分原理,即次可加测度压等于在某个非紧集上的拓扑压.     

基于光纤中受激喇曼散射效应的全光多波长转换耦合器EI北大核心CSCD

基于光纤中受激喇曼散射效应,运用级联同种光纤设计出全光多波长转换耦合器,使转换输出的各路信号光功率相等.建立了全光多波长转换设计方案的理论模型,给出了设计原理框图以及实现方法,并以1路泵浦信号光、4路连续探测光为例,通过OptiSystem软件进行了仿真,仿真结果表明:所设计的全光多波长转换耦合器能同时对4路探测光实现波长转换,转换输出的信号光码型和输入泵浦信号光码型基本一致;转换效率和消光比随着探测光波长的增大而增大,最大值分别为-34dB和36.68dB;Q因子随着探测光波长的增大而减少,最大值为128.29;在级联光纤之后,4路输出信号光峰值功率和消光比基本相等,Q因子整体数值相对于全光多波长转换后有所下降,最大值为89.5455,验证了该方案的可行性.     

Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

Graphene on gallium nitride(GaN) will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graphene on GaN without an extra catalyst by chemical vapor deposition. Raman spectra indicate that the graphene films are uniform and about 5–6 layers in thickness. Meanwhile, the effects of growth temperatures on the growth of graphene films are systematically studied, of which 950℃ is found to be the optimum growth temperature. The sheet resistance of the grown graphene is 41.1Ω/square,which is close to the lowest sheet resistance of transferred graphene reported. The mechanism of graphene growth on GaN is proposed and discussed in detail. XRD spectra and photoluminescence spectra indicate that the quality of GaN epi-layers will not be affected after the growth of graphene.     

Two New Organic Supramolecular Complexes Based on 2,3,6,7-Tetrahydroxyl-9,10-dimethyl-9,10-dihydro-9,10-ethanoanthracene and 4,4′-Bipyridine or 4,4′-Bipyridinylethane

Two new organic supramolecular cocrystal complexes C18H18O4·C10H8N2(I) and C18H18O4·C12H10N2(II)(C18H18O4 = 2,3,6,7-tetrahydroxyl-9,10-dimethyl-9,10-dihydro-9,10-ethanoanthracene(LH4), C10H8N2 = 4,4'-bipyridine(bpy) and C12H10N2 = 4,4'-bipyridinylethane(bpe)) have been obtained by mixing LH4 with corresponding bpy or bpe ligand. The two complexes have been determined by X-ray crystal structure analysis, elemental analysis and IR analysis. Compound I crystallizes in the orthorhombic Pnma with a = 9.7078(4), b = 22.4974(10), c = 20.6272(9) V = 4505.0(3)3, Mr = 454.51, Dc. = 1.340 g·cm-3, μ = 0.09 mm-1, F(000) = 1920, Z = 8, R = 0.0503 and wR = 0.1360. Compound II crystallizes in monoclinic C2/c with a = 29.944(6), b = 9.820(2), c = 22.643(5) , V = 5048.4(18)3, Mr = 480.54, Dc. = 1.265 g cm–3, μ = 0.084 mm–1, F(000) = 2032, Z = 8, R = 0.0548 and wR = 0.1600. X-ray single-crystal structure analysis shows that two-dimensional(2D) layer supramolecular structures are formed through hydrogen bonds and π-π interactions in the two complexes. IR analysis also indicates that there are only associated hydroxyl groups in the two complexes.     

氰根桥联FeⅢ-CuⅡ一维配合物{[Fe(1-CH3im)(CN)4(μ-CN)Cu(cyclam)]·H2O}n的合成、结构及磁性研究

基于构筑单元K₂[Fe(1-CH₃im)(CN)₅] 和[Cu(cyclam)] (ClO₄)₂, 合成了一个氰根桥联Fe^Ⅲ-Cu^Ⅱ中性一维化合物{[Fe(1-CH₃im)(CN)₄(μ-CN)Cu(cyclam)] ·H₂O}_n(1-CH₃im=1-甲基咪唑;cyclam=1, 4, 8, 11-四氮杂环十四烷) (1), 并通过X-射线单晶分析表征其结构 特征。结果表明:化合物(1)是由氰根桥联的杂金属组成的聚合物, 其结构属于三斜晶系, P1空间群, a=0.832 56(17) nm, b= 0.899 38(18) nm, c=0.998 3(2) nm, α=111.94(3)°, β=95.06(3)°, γ=116.90(3)°, V=0.587 7(2) nm³, Z=1, D_c=1.554 g·cm^-3, μ=1.558 mm^-1, F(000)=286, R₁=0.051 9, wR₂=0.135 3。磁性研究表明:配合物1中Cu^Ⅱ和低自旋的Fe^Ⅲ离子之间存在弱的铁磁耦合作用。     

调制气流声源气声转换过程模型研究

为克服已有准稳态理论在高频低速条件下性能预测的偏差和在换能机理假设上的不足,同时为设计者提供预示声源结构与辐射特性之间关系的工具,提出了基于混合气动声学方法的辐射声场仿真模型,分析了典型工况下流场和声场特性,探讨了换能过程的频率相关性.内流场由瞬态可压缩雷诺时均方程描述,SST k-w湍流模型耦合增强壁面函数用于预测喉...     

二维范德瓦尔斯异质结构的制备与物性研究

二维范德瓦尔斯材料(可简称二维材料)已发展成为备受瞩目的材料大家族,而由其衍生的二维范德瓦尔斯异质结构的集成、性能及应用是现今凝聚态物理和材料科学领域的研究热点之一.二维范德瓦尔斯异质结构为探索丰富多彩的物理效应和新奇的物理现象,以及构建新型的自旋电子学器件提供了灵活而广阔的平台.本文从二维材料的转移技术着手,介绍二维范德瓦尔斯异质结构的构筑、性能及应用.首先,依据湿法转移和干法转移的分类,详细介绍二维范德瓦尔斯异质结构的制备技术,内容包括转移技术的通用设备、常用转移方法的具体操作步骤、三维操纵二维材料的方法、异质界面清洁.随后介绍二维范德瓦尔斯异质结构的性能和应用,重点介绍二维磁性范德瓦尔斯异质结构,并列举在二维范德瓦尔斯磁隧道结和摩尔超晶格领域的应用.因此,二维材料转移技术的发展和优化将进一步助力二维范德瓦尔斯异质结构在基础科学研究和实际应用上取得突破性的成果.     

大功率调制气流声源阵列的相干合成实验研究

完成了调制气流声源阵列的相干合成实验. 提出了利用主动相位控制方法实现调制气流声源阵列相干合成的思路, 介绍了基于随机并行梯度下降算法的声源阵列相干合成的原理. 对利用该算法实现声源阵列的相干合成进行了数值模拟, 完成了双调制气流声源阵列在远场的相干合成实验, 并给出算法参数的合理设置方案. 实验结果显示, 基频成分的相干合成效果明显, 算法收敛时测点处的声压级相比单源发射增加了4 dB, 接近于各单源功率谱中基频成分相干合成、其他频率成分非相干合成的结果; 结果表明实验中算法能够有效控制各调制气流声源辐射声波的相位, 取得了明显的相干合成效果. 关键词： 调制气流声源 相干合成 随机并行梯度下降 高阶谐波