D-Proline capped gold nanoclusters for turn-on detection of serum Raltitrexed

Using D-proline (D-Pro) as the reducing agent and capper, D-Pro@AuNCs was rapidly constructed. Its fluorescence could be quenched by AuNPs. Due to the electrostatic interaction between anticancer drug Raltitrexed (RTX) and AuNPs induced fluorescence "turn-on" principle, the resultant fluorescent probe exhibited good selectivity and sensitivity for detecting RTX in rat serums.     

Studies toward the total synthesis of clavulactone

Synthetic studies directed toward a total synthesis of clavulactone are reported. In light of the analysis made in our previous work, cyclopentane 4a (a key intermediate in the present work) was synthesized through a radical-mediated ring closure of a rationally designed substrate 25. Using HWE reactions, the lower and upper side-chains of 4a were converted into an allyl chloride and an allyl cyanohydrin, respectively. Subsequent treatment of the allyl chloride/cyanohydrin in a highly diluted THF solution with sodium bis(trimethylsiliyl)amide led to intramolecular alkylation and thus completed a major endeavor in synthesizing the dolabellane framework, construction of the eleven-membered ring. SmI(2)-mediated lactonization as a model reaction for the formation of the alpha,beta-unsaturated delta-lactone segment of clavulactone is also described.     

Direct observation of capillary condensation of a solid

We describe the direct condensation of a solid from vapor in an annular mica wedge. Neo-pentanol initially condenses as a liquid from 8 to 57 degrees C (the melting point T(m)), followed by nucleation of a solid from vapor for T<45 degrees C. Menthol (T(m) = 42 degrees C) gives only liquid condensates down to 12 degrees C. The adsorbed films of neo-pentanol, which unlike those of menthol show layering transitions, and the disordered crystalline phase of bulk neo-pentanol appear to facilitate condensation of the solid phase. There is evidence for a change in the nature of the solid neo-pentanol condensate with T.     

Fluctuation of Quantum Information Density in Curved Time-Space

A dynamical equation for quantum information density （QID） in curved spacetime is presented. The related fluctuation of QID with quantum Einstein equation is also discussed, which reveals the measuring of the dynamical mutual information condition using a Gaussian quantum channel.     

Tensile properties of structural I clathrate hydrates: Role of guest–host hydrogen bonding ability

Clathrate hydrates (CHs) are one of the most promising molecular structures in applications of gas capture and storage, and gas separations. Fundamental knowledge of mechanical characteristics of CHs is of crucial importance for assessing gas storage and separations at cold conditions, as well as understanding their stability and formation mechanisms. Here, the tensile mechanical properties of structural I CHs encapsulating a variety of guest species (CH₄, NH₃, H₂S, CH₂O, CH₃OH, and CH₃SH) that have different abilities to form hydrogen (H-) bonds with water molecule are explored by classical molecular dynamics (MD) simulations. All investigated CHs are structurally stable clathrate structures. Basic mechanical properties of CHs including tensile limit and Young’s modulus are dominated by the H-bonding ability of host–guest molecules and the guest molecular polarity. CHs containing small CH₄, CH₂O and H₂S guest molecules that possess weak H-bonding ability are mechanically robust clathrate structures and mechanically destabilized via brittle failure on the (1 0 1) plane. However, those entrapping CH₃SH, CH₃OH, and NH₃ that have strong H-bonding ability are mechanically weak molecular structures and mechanically destabilized through ductile failure as a result of gradual global dissociation of clathrate cages.     

Nearby source interpretation of differences among light and medium composition spectra in cosmic rays

Recently the AMS-02 reported the precise measurements of the energy spectra of medium-mass compositions (Neon, Magnesium, Silicon) of primary cosmic rays, which reveal different properties from those of light compositions (Helium, Carbon, Oxygen). Here we propose a nearby source scenario, together with the background source contribution, to explain the newly measured spectra of cosmic ray Ne, Mg, Si, and particularly their differences from that of He, C, O. Their differences at high energies can be naturally accounted for by the element abundance of the nearby source. Specifically, the abundance ratio of the nearby source to the background of the Ne, Mg, Si elements is lower by a factor of ∼ 1.7 than that of the He, C, O elements. Such a difference could be due to the abundance difference of the stellar evolution of the progenitor star or the acceleration process/environment, of the nearby source. This scenario can simultaneously explain the high-energy spectral softening features of cosmic ray spectra revealed recently by CREAM/NUCLEON/DAMPE, as well as the energy-dependent behaviors of the large-scale anisotropies. It is predicted that the dipole anisotropy amplitudes below PeV energies of the Ne, Mg, Si group are smaller than that of the He, C, O group, which can be tested with future measurements.     

Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass

The determination of band offsets is crucial in the optimization of Ga₂O₃-based devices, since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous interfaces. In this work, the band offsets of the Ga₂O₃/FTO heterojunction are studied using x-ray photoelectron spectroscopy (XPS) based on Kraut's method, which suggests a staggered type-Ⅱ alignment with a conduction band offset (ΔE_C) of 1.66 eV and a valence band offset (ΔE_V) of -2.41 eV. Furthermore, the electronic properties of the Ga₂O₃/FTO heterostructure are also measured, both in the dark and under ultraviolet (UV) illuminated conditions (254 nm UV light). Overall, this work can provide meaningful guidance for the design and construction of oxide hetero-structured devices based on wide-bandgap semiconducting Ga₂O₃.