The diffusion of Pt in BST films on Pt/Ti/SiO2/Si substrate by sol-gel method

Barium strontium titanate (Ba_0.65Sr_0.35TiO₃) ferroelectric thin films have been prepared by sol-gel method on Pt/Ti/SiO₂/Si substrate. The X-ray diffraction (XRD) pattern indicated that the films were a polycrystalline perovskite structure and the atomic force microscope (AFM) image showed that the crystallite size and the root mean square roughness (RMS) were 90 nm and 3.6 nm, respectively. The X-ray photoelectron spectrum (XPS) images showed that Pt consisting in BST thin films was the metallic state, and the Auger electron spectroscopy (AES) analysed the Pt concentration in different depth profiles of BST thin films. The result displayed that the Pt diffusion in BST thin film is divided into two regions: near the BST/Pt interface, the diffusion type was volume diffusion, and far from the interface correspondingly, the diffusion type became grain boundary diffusion. In this paper, the previous researcher’s result was used to verify our conclusion.     

Review on the thickness measurement of ultrathin oxide films by mutual calibration method

Mutual calibration was suggested as a method to determine the absolute thickness of ultrathin oxide films. It was motivated from the large offset values in the reported thicknesses in the Consultative Committee for Amount of Substance (CCQM) pilot study P-38 for the thickness measurement of SiO₂ films on Si(100) and Si(111) substrates in 2004. Large offset values from 0.5 to 1.0 nm were reported in the thicknesses by ellipsometry, X-ray reflectometry (XRR), medium-energy ion scattering spectrometry (MEIS), Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA), and transmission electron microscopy (TEM). However, the offset value for the thicknesses by X-ray photoelectron spectroscopy (XPS) was close to zero (−0.013 nm). From these results, the mutual calibration method was reported for the thickness measurement of SiO₂ films on Si(100) by combination of TEM and XPS. The mutual calibration method has been applied for the thickness measurements of hetero oxide films such as Al₂O₃ and HfO₂. Recently, the effect of surface contamination was reported to be critical to the thickness measurement of HfO₂ films by XPS. On the other hand, MEIS was proved to be a powerful zero offset method which is not affected by the surface contamination. As a result, the reference thicknesses in the CCQM pilot study P-190 for the thickness measurement of HfO₂ films on Si(100) substrate were determined by mutual calibration method from the average XRR data and MEIS analysis. Conclusively, the thicknesses of ultrathin oxide films can be traceably certified by mutual calibration method and most thickness measurement methods can be calibrated from the certified thicknesses.     

The Effect of SiO2 Addition on the Grain Size and Photocatalytic Activity of TiO2 Thin Films

The uniform transparent TiO₂/SiO₂ nanometer composite thin films were prepared via sol-gel method on the soda lime glass substrates, and were characterized by X-ray photoelectron spectroscopy (XPS), FTIR spectroscopy, UV-VIS spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD) and BET surface areas. It was found that the addition of SiO₂ to TiO₂ thin films could suppress the grain growth of TiO₂ crystal and increase the hydroxyl content of the surface of TiO₂ films. The photocatalytic activity of the as-prepared TiO₂/SiO₂ composite thin films increases for SiO₂ content of less than 5 mol%.     

An X-ray photoelectron spectroscopic study of novel SiON glasses

Novel SiON glasses obtained by melting mixtures of crystalline α-SiO₂ and α-Si₃N₄ were investigated by means of X-ray photoelectron spectroscopy (XPS). The incorporation of nitrogen into the SiO₂ network was recently proved by ²⁹Si-MAS-NMR (magic-angle spinning nuclear magnetic resonance) and Si K-XANES (X-ray absorption near edge structure). The Si 2p XPS and the Si KLL XAES (X-ray excited Auger electron spectroscopy) studies of the SiON glasses confirm the formation of mixed structural units (SiO_xN_4-x) by the presence of an additional spectral component energetically located between SiO₂- and Si₃N₄-like signals. The N 1s and O 1s XPS spectra support the conclusion about the incorporation of nitrogen into the SiO₂ network.     

Analysis of the electronic structure of Hf(Si0.5As0.5)As by X-ray photoelectron and photoemission spectroscopy

The ternary hafnium silicon arsenide, Hf(Si_xAs_1−x)As, has been synthesized with a phase width of 0.5?x?0.7. Single-crystal X-ray diffraction studies on Hf(Si_0.5As_0.5)As showed that it adopts the ZrSiS-type structure (Pearson symbol tP6, space group P4/nmm, Z=2, a=3.6410(5) Å, c=8.155(1) Å). Physical property measurements indicated that it is metallic and Pauli paramagnetic. The electronic structure of Hf(Si_0.5As_0.5)As was investigated by examining plate-shaped crystals with laboratory-based X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoemission spectroscopy (PES). The Si 2p and As 3d XPS binding energies were consistent with assignments of anionic Si¹⁻ and As^1-. However, the Hf charge could not be determined by analysis of the Hf 4f binding energy because of electron delocalization in the 5d band. To examine these charge assignments further, the valence band spectrum obtained by XPS and PES was interpreted with the aid of TB-LMTO band structure calculations. By collecting the PES spectra at different excitation energies to vary the photoionization cross-sections, the contributions from different elements to the valence band spectrum could be isolated. Fitting the XPS valence band spectrum to these elemental components resulted in charges that confirm that the formulation of the product is Hf²⁺[(Si_0.5As_0.5)As]²⁻.     

X-ray photoelectron spectroscopic and electrochemical impedance spectroscopic analysis of RuO2-Ta2O5 thick film pH sensors

The paper reports on investigation of the pH sensing mechanism of thick film RuO₂-Ta₂O₅ sensors by using X-ray photoelectron spectroscopy (XPS) and electrochemical impedance spectroscopy (EIS). Interdigitated conductimetric pH sensors were screen printed on alumina substrates. The microstructure and elemental composition of the films were examined by scanning electron microscopy and energy dispersive spectroscopy. The XPS studies revealed the presence of Ru ions at different oxidation states and the surface hydroxylation of the sensing layer increasing with increasing pH. The EIS analysis carried out in the frequency range 10 Hz–2 MHz showed that the electrical parameters of the sensitive electrodes in the low frequency range were distinctly dependent on pH. The charge transfer and ionic exchange occurring at metal oxide-solution interface were indicated as processes responsible for the sensing mechanism of thick film RuO₂-Ta₂O₅ pH sensors.     

The determination of local structural units in amorphous SiBN 3C by means of X-ray photoelectron and X-ray absorption spectroscopy

X-ray photoelectron spectroscopy (XPS) and X-ray absorption near edge structure (XANES) spectroscopy at the K-edge of Si, N, and B are presented as techniques suited to determine structural units in amorphous SiBN₃C. The measurements reported give evidence for the presence of tetrahedral (SiN₄)- and planar (BN₃)-groups. It is concluded that these structural elements dominate the atomic surroundings of B and Si, respectively. From the spectroscopic results we conclude that C is mainly bonded to N and is not present as a pure carbide.     

Thermoanalytical and spectroscopic studies of the synthesis of suppokted palladium catalyst in A H2/PdCl2/SiO2 parent system

A 5 wt% Pd/SiO₂ catalyst was synthesized by heating PdCl₂-impregnated SiO₂ in H₂ at 300°C for 2 h. It was found that the metal particle dispersion is improved when the reduction step is preceded by calcination at 300°C for 2h. Thermogravimetry of the impregnated support in air, N₂ and H₂ atmospheres was used to monitor the interactions occurring during the various preparative steps (i.e. drying, calcination and reduction) of the catalyst. The solid prduct of each preparative step was characterized by X-ray diffractometry and UV/Vis diffuse reflectance spectroscopy. The results indicate that following the drying step (at 110°C in air) the palladium occurs in two detectable forms: PdCl₂ particles and Si?O?Pdⁿ⁺ surface species. The calcination appears to transform the PdCl₂ particles into the latter surface species. The H₂-reduction eventually converts the surface species into finely-dispersed Pd° metal particles (average size=8–14 nm). No other reduction products, such as Pd_ySi_x, were detected.     

Analysis of light elements in superposed layers by Monte Carlo simulation of EELS spectra

A Monte Carlo code, previously set up to simulate electron energy loss spectra of carbon films on silicon at 100 kV, has been extended to the analysis, at 300 kV, of a Si/SiO₂/Si structure; the final goal is the determination of the oxygen concentration in SiO_x precipitates embedded in a Si matrix. The upgrading of the programme has required the introduction of relativistic kinematics and relativistic corrections to elastic and inelastic cross sections.The Si/SiO₂/Si samples have been prepared by CVD deposition of a 16 nm thick silicon film onto a silicon wafer covered with a 11 nm thick thermal oxide. The thickness of both films has been checked by transmission electron microscopy on cross sections. The EELS experiments have been performed on planar sections, in regions of different thickness; the EELS spectra have been acquired with a parallel 666 Gatan spectrometer, fitted to a Philips CM 30 TEM/STEM, operating at 300 kV. The stoichiometry of the SiO_x can be obtained by the ratioing of the areas under the OK and SiK edges, taking advantage of the possibility given by the Monte Carlo simulation to separate the background electrons from the one suffering the characteristic energy loss. The agreement between experiments and calculations in the case examined is satisfactory, so that the application of this procedure to SiO_x precipitates is promising.     

X-Ray Analysis of Multi-Films for Electrochromic Device Application

Multilayer films based on tungsten oxide (WO₃), ITO (indium tin oxide) and CdS were deposited mainly by reactive dc magnetron sputtering onto glass substrates for electrochromic application. The thin films were analyzed by means of XPS (X-ray photoelectron spectroscopy), GIXD (grazing incidence X-ray diffraction) and XRD (X-ray diffraction). XRD and XPS results confirmed that the films were WO₃, CdS and ITO, respectively. The surface and interface of the CdS/ITO bi-layered film was studied by GIXD in different incidence angles. Detailed results about the amorphous characterization of the films during room temperature growth and post annealing are given.     

Comparative composition analysis of SiOx and SiNx thin films by AES,EDX and RBS

The chemical composition of thin films in SiO_x and SiN_x systems (“SIPOS”) have been analyzed by comparative AES, EDX, and RBS of the same samples to assess the extent of possible errors introduced by the “weak points” of each method. These exist for EDX in the necessity of a thickness correction, for AES in a possible composition dependence of the sensitivity factors, and for RBS in the low sensitivity in detecting light elements. Linear correlations between the data obtained by RBS and EDX have been revealed over the whole range of x. Therefore, EDX can be calibrated by appropriate standards of pure SiO₂ or Si₃N₄ films. For AES analysis a calibration curve is needed. Using RBS data for calibration the content of the light components O and N might be slightly overestimated by this method.     

Assembly of Graphene Nanosheets and SiO2 Nanoparticles Towards Transparent,Antireflective, Conductive,and Superhydrophilic Multifunctional Hybrid Films

A new approach for the fabrication of transparent, antireflective, conductive and superhydrophilic multifunctional hybrid films through the layer‐by‐layer (LbL) assembly of reduced graphene oxide (RGO) nanosheets and SiO₂ nanoparticles is reported. The RGO nanosheets, SiO₂ nanoparticles and films were characterized by means of transmission electron microscopy, UV/Vis absorption spectrophotometry, Raman spectroscopy, atomic force microscopy, contact angle/interface system, and a four‐point probe. It was found that the graphene/SiO₂ hybrid films exhibited a significant increase in transmittance as compared with RGO films. The optical, electronic and wetting properties of hybrid films could be manipulated by rational design of the film structure and variation of the cycle number of the LbL assembly. The obtained transparent, conductive, and superhydrophilic graphene/SiO₂ hybrid films showed excellent antireflective, antistatic, and antifogging behaviors. The remarkable performance could be attributed to the combination of electrical conductivity of RGO nanosheets and superhydrophilic antireflective surface derived from SiO₂ nanoparticles.     

XPS depth profiling investigations on La2Zr2O7 layers prepared by chemical solution deposition

La₂Zr₂O₇ (LZO) layers have been recently investigated as potential buffer layers for superconducting YBa₂Cu₃O_7–x coated conductors deposited on Ni tapes. Chemical solution deposition was used for LZO layer preparation. X-ray photoelectron spectroscopy (XPS) depth profiling is demonstrated to be an important method for layer characterization in addition to X-ray diffraction techniques. XPS measurements revealed layers that are homogeneous in depth, very smooth, and have no significant impurities. A slight difference to the nominal La:Zr stoichimetry is discussed in combination with structural defects that are suspected from spectral changes during ion sputtering.     

XPS chemical state analysis of sputter depth profiling measurements for annealed TiAl-SiO2 and TiAl-W layer stacks

For the application of surface acoustic wave sensors at high temperatures, both a high-temperature stable piezoelectric substrate and a suitable metallization for the electrodes are needed. Our current attempt is to use TiAl thin films as metallization because this material is also known to be high temperature stable. In this study, Ti/Al multilayers and Ti-Al alloy layers were prepared in combination with an SiO₂ cover layer or a W barrier layer at the interface to the substrate (thermally oxidized Si or Ca₃TaGa₃Si₂O₁₄) as an oxidation protection. To form the high-temperature stable γ-TiAl phase and to test the thermal stability of the layer systems, thermal treatments were done in vacuum at several temperatures. We used X-ray photoelectron spectroscopy (XPS) sputter depth-profiling to investigate the film composition and oxidation behavior. In this paper, we demonstrate how the semiautomatic peak fitting can help to extract beside the elemental information also the chemical information from the measured depth profiles.     

Nitrogen depth distribution, interface and structure analysis of SiNx layers produced by low-energy ion implantation

Thin silicon nitride (SiN _x ) layers with the stoichiometric N/Si ratio of 1.33 in the maximum of the concentration depth distributions of nitrogen were produced by implanting 10 keV¹⁵N ₂ ⁺ in 100 silicon at room temperature under high vacuum conditions. The depth distribution of the implanted isotope was measured by resonance nuclear reaction analysis (NRA), whereas the layer structure of the implanted region and the geometrical thickness of the layers were characterised by high resolution transmission electron microscopy (TEM). SiN _x layers with a thickness of about 30 nm were determined by NRA. Channeling Rutherford backscattering spectrometry was used to determine the disorder in the silicon substrate. Sharp interfaces of a few nanometers between the highly disordered implanted region and the crystalline structure of the substrate thickness were observed by TEM. The high thermal stability of SiN _x layers with N/Si ratios from under to over stoichiometric could be shown by electron beam rapid thermal annealing (1100 °C for 15 s, ramping up and down 5 °C/s) and NRA.     

XANES and XPS characterization of hard amorphous CSixNy thin films grown by RF nitrogen plasma assisted pulsed laser deposition

Amorphous carbon silicon nitride thin films were grown on (100) oriented silicon substrates by pulsed laser deposition (PLD) assisted by an RF nitrogen plasma source. Up to about 30 at. % nitrogen and up to 20 at. % silicon were found in the hard amorphous thin films by XPS in dependence on the composition of the mixed graphite / Si₃N₄ PLD target. The universal nanohardness was measured to be at maximum load force of 0.1 mN up to 23 GPa for thin CSi_xN_y films with reference value of 14 GPa for single crystalline silicon. X-ray photoelectron spectroscopy (XPS) of CSi_xN_y film surfaces showed a clear correlation of binding energy and intensity of fitted features of N 1s, C 1s, and Si 2p peaks to the composition of the graphite / Si₃N₄ target and to nitrogen flow through the plasma source, indicating soft changes of binding structure of the thin films due to variation of PLD parameters. Auger electron spectroscopy (AES) of Si KL₂₃L₂₃;¹D Auger transition gave a detailed view of bonding structure of Si in the CSi_xN_y films. The intensity of π* and σ* resonances at the carbon K-edge X-ray absorption near-edge structure (XANES) of the CSi_xN_y films measured at BESSY I corresponded to the nanohardness of the CSi_xN_y films, thus giving insight into chemical binding structure of superhard amorphous materials.     

Cu_xCo_(1-x)/Al_2O_3/FeCrAl整体式催化剂上甲苯催化燃烧(英文)

以FeCrAl合金薄片为基底,Al2O3浆料为过渡胶体,不同摩尔比的Cu、Co为催化活性组分,制备了一系列CuxCo1-x/Al2O3/FeCrAl(x=0-1)新型整体式催化剂.采用X射线粉末衍射(XRD),扫描电子显微镜(SEM),X光电子能谱(XPS)和程序升温还原(TPR)等手段对催化剂的结构进行了表征.在微型固定床反应器上评价了催化剂的催化甲苯燃烧性能.研究结果表明:在所制备的整体式催化剂上,当Cu含量比较低时,形成了Cu-Co-O固溶体;当Cu含量比较高时,可以测得CuO的衍射峰.催化剂表面颗粒大小和形貌与Cu、Co摩尔比密切相关.在催化剂表面,Co以Co2+和Co3+价态存在,而Cu主要以Cu2+价态存在.催化剂中的Cu可以改善Co的氧化还原性,从而有利于催化剂活性的提高.在所制备的催化剂中,Cu0.5Co0.5/Al2O3/FeCrAl催化剂具有最好的活性,甲苯在374oC可以完全催化燃烧消除.     

Considerations of the intermediate oxides via XPS elemental quantitative analysis for the thickness measurements of ultrathin SiO2 on Si

The thicknesses of intermediate oxides at the interface between ultrathin SiO₂ and Si substrates have been measured via XPS elemental quantitative analysis for some SiO₂/Si(100) and SiO₂/Si(111) samples with the silicon oxide thickness less than 2 nm. The measurements involve XPS determination of the Si relative atomic ratio, calculation of Si atomic densities for the intermediate oxide, etc. and then the intermediate oxide thicknesses and the number of monolayers are obtained by referencing the thickness data from two international comparisons for these samples. The results show that the thickness of the intermediate oxides is in the range 0.14–0.16 nm with an average value of 0.15 nm. The number of monolayers for the intermediate oxides at the interface is less than one monolayer with an average value of 0.60. In the present work, there are a series of approximations. By making these approximations many parameters, including L and R₀, used in the conventional calculation method are removed to give a simpler equation, which is valid when the thicknesses of SiO₂ overlayer and the intermediate oxides are very small. This, therefore, appears to be a simple and quick method to obtain approximate oxide thicknesses of modest accuracy. The present work does not in any way replace or improve on Eqns ( 2 –6) cited in the text. Copyright © 2010 John Wiley & Sons, Ltd.     

Analysis of sputter deposited and evaporated tantalum oxide layers on SiO2 by SNMS, XPS, TDS and TRFA

Summary Tantalum oxide films with a thickness of 100 nm for the application in high power laser systems have been prepared on SiO₂-substrates by ion beam sputtering or electron beam evaporation. Comparative analysis of both groups of dielectric films has been performed with the separate bombardment mode of secondary neutral mass spectrometry SNMS, X-ray induced photoelectron spectroscopy XPS, thermal desorption spectroscopy TDS and total reflection X-ray fluorescence analysis TRFA.

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Analyse von aufgesputterten und aufgedampften Tantaloxid-Schichten auf SiO₂ mit Hilfe von SNMS, XPS, TDS und TRFA

     

Influence of YSZ buffer layer on the electric properties of compositionally graded (Ba,Sr)TiO<Subscript>3</Subscript> thin film

Compositionally graded Ba_1−x Sr _x TiO₃ (BST) (0 ≤ x ≤ 0.4) thin films were fabricated on Pt/Ti/SiO₂/Si and YSZ/Pt/Ti/SiO₂/Si substrates by a modified sol–gel technique. The YSZ buffer layer was prepared by RF magnetron sputtering. The microstructure of the graded BST films was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The results showed that all the films have uniform and crack-free surface with a perovskite structure. The graded BST film with an YSZ buffer layer has larger dielectric constant and lower dielectric loss. The leakage current density of the graded BST film with an YSZ buffer layer lowers two orders than the film without buffer layer. The improved electric properties of the graded films with an YSZ buffer layer was attributed to the YSZ buffer layer act as an excellent seeding layer to enhance the graded BST film growth.