影响TiO2薄膜光催化降解亚甲基蓝的因素

 用中频交流反应磁控溅射技术制备了具有良好光催化性能的TiO2薄膜,考察了紫外光源、反应器和溶液浓度对亚甲基蓝溶液光催化降解特性的影响. 结果表明,紫外光源对TiO2薄膜光催化降解性能有较大的影响; 在计算光催化降解速率时应充分考虑光解和光氧化的影响. 低压汞灯TUV为光催化降解的较好选择. 动态反应系统可以有效避免光解,显著提高光催化反应速度. TiO2薄膜具有很好的光催化性能,且性能稳定.     

浅池型TiO2/ACF光催化降解水中苯酚的研究

为了提高光催化过程的降解速率，本文以涂覆法制得的二氧化钛/活性炭纤维（TiO2/ACF）为光催化剂，300 W(365 nm)高压汞灯为光源，研究了浅池型反应器中苯酚在TiO2/ACF上的光催化降解动力学；探讨了光强度、高压汞灯滤光以及光源种类对降解反应的影响，并对光氧化，光催化和吸附过程进行了比较。结果表明：光氧化对苯酚的降解无效果，光催化降解速率常数与吸附速率常数之比为3.35/1；光强越大，光催化降解速率越快；高压汞灯不滤光时光催化降解速率明显加快，但光催化反应仍遵循准一级反应动力学方程；波长为254 nm紫外杀菌灯的降解效果高于波长为365 nm高压汞灯滤光后的降解效果。     

几种典型有毒有机污染物的光催化降解研究

本文研究了氯代苯酚和苯胺类化合物的光催化降解,探讨了这些有机污染物分子的氯取代和化合物毒性与光催化降解之间的关系.研究表明,氯代苯酚和苯胺类化合物的光催化降解均符合表观一级反应动力学模型.有机物分子中氯取代基的引入加快了化合物的光催化降解,且反应速率随氯取代基个数的增多而增大.光催化降解的表观速率常数与正辛醇-水分配系数之间存在有较好的线性关系:logk=alogKow+b,该模型可以用于有机污染物的光催化降解性预测.     

液相沉积法制备光催化TiO2/SiO2复合薄膜及其表征

通过液相沉积法在较低的温度下制备了TiO₂/SiO₂复合薄膜,利用UV-Vis、XRD和SEM等表征手段对薄膜的透明性、物相和表面形貌进行了表征;并在紫外光照下,通过薄膜对罗丹明B水溶液的光催化降解实验,评价了沉积薄膜的光催化活性.实验结果表明,在室温下制备的液相沉积膜具有较好的光催化活性.     

TiO_2薄膜光催化降解亚甲基蓝(英文)

用常压气相沉积法镀膜制得的二氧化钛薄膜为催化剂,以紫外灯为光源,研究了亚甲基蓝的光催化降解。实验表明：镀膜时基片温度为２００℃;用铜线作为底物,在染料溶液中加Ｈ２Ｏ２,可提高光催化活性。     

液相沉积法制备光催化活性TiO2薄膜和纳米粉体

采用液相沉积法 ,在 3 5℃通过向六氟钛酸铵水溶液中添加硼酸和结晶诱导剂锐钛矿型TiO2 纳米晶 ,沉积出具有光催化活性的TiO2 薄膜和纳米粉体 .用XRD ,AFM ,阶梯仪 ,UV vis ,BET法对TiO2 薄膜和粉体的沉积条件、结构、厚度和性能进行了测定和表征 ,并用亚甲兰的降解 ,评价了TiO2 薄膜和纳米粉体的光催化活性 .结果表明 ,当反应物六氟钛酸铵与硼酸的摩尔比为 1∶2～ 1∶4时 ,沉积的粉体和薄膜含有锐钛矿相TiO2 ;经 3 0 0℃热处理的TiO2 薄膜和纳米粉体具有最高的光催化活性 ,它的光催化活性是未经热处理前的 5倍 .本文还解释了经 3 0 0℃热处理的薄膜和纳米粉体具有最高光催化活性的原因     

液相沉积法制备光催化活性TiO2薄膜和纳米粉体

采用液相沉积法，在35℃通过向六氟钛酸铵水溶液中添加硼酸和结晶诱导剂锐 铁矿型TiO2纳米晶，沉积出具有光催化活性的Ti02薄膜和纳米粉体．用XRD，AFM， 阶梯仪,UV-vis，BET法对Ti02薄膜和粉体的沉积条件、结构、厚度和性能进行了测 定和表征，并用亚甲兰的降解，评价了TiO2薄膜和纳米粉体的光催化活性．结果表 明，当反应物六氟钛酸铵与硼酸的摩尔比为1：2—1：4时，沉积的粉体和薄膜含有 锐钛矿相Ti02；经300℃热处理的Ti02薄膜和纳米粉体具有最高的光催化活性，它 的光催化活性是未经热处理前的5倍．本文还解释了经300℃热处理的薄膜和纳米粉 体具有最高光催化活性的原因．     

Au/TiO2薄膜的制备及其光催化氧化对硝基苯酚的性能

 采用溶胶-凝胶法制备了掺杂Au的TiO2薄膜,考察了其光催化氧化对硝基苯酚的活性,并采用原子力显微镜、 X射线光电子能谱、热重-差示量热扫描和X射线衍射技术对薄膜进行了表征. 结果表明, Au/TiO2薄膜主要含有Ti, O, Au和C元素,其中Au主要以0价形式存在. 经高温焙烧后薄膜中的Au向表面聚集,随着焙烧温度的升高,薄膜表面逐渐变得粗糙,颗粒逐渐变大,薄膜的光催化活性下降. 与纯TiO2薄膜相比,掺杂Au的TiO2薄膜的光催化活性有所提高, 在673 K下焙烧的Au/TiO2薄膜的光催化活性较好,反应1 h后对硝基苯酚的降解率可以达到51.4%.     

苯酚及其光催化降解中间产物的HPLC法同时测定

研究了苯酚光催化降解过程中苯酚及３种中间体（对苯二酚、对苯二醌、邻苯二酚）含量的高效液相色谱测定方法,获得了同时测定４种物质的较佳液相色谱条件：流动相Ｖ（甲醇）：Ｖ（水）＝３０：７０,流速为０．８ｍｌ／ｍｉｎ,进样体积为２０ｕＬ,检测波长为２８０ｎｍ。用外标法进行了定量,相对标准偏差和回收率分别为０．３１％～１．１３％和９７．２％～１０１．７％,该法快速、简便、准确,适合于苯酚光催化降解过程中样品     

(Ni-Mo)/TiO2纳米薄膜光催化降解刚果红的性能与机理

用恒电流复合电沉积方法制备(Ni-Mo)/TiO2薄膜,以扫描电子显微镜(SEM)、X射线衍射(XRD)、拉曼(Raman)光谱和紫外-可见漫反射光谱(UV-VisDRS)对薄膜的表面形貌、晶相结构和光谱特性进行了表征,以刚果红为模拟污染物对薄膜的光催化性能进行了测定,并讨论了刚果红溶液的pH值对薄膜光催化活性的影响.采用循环伏安技术和向溶液中加入活性物种捕获剂的方法对薄膜光催化降解机理进行了探索.结果表明:(Ni-Mo)/TiO2薄膜是由粒径为50-100nmTiO2纳米粒子相和纳米晶Ni-Mo固溶体相构成的复合薄膜.薄膜具有较高的光催化活性,卤钨灯照射80min后,复合薄膜光催化刚果红的降解率是多孔TiO2(DegussaP25)/ITO(氧化铟锡)纳米薄膜的2.43倍.(Ni-Mo)/TiO2薄膜光催化活性的提高主要归因于薄膜层中有效形成的(Ni-Mo)/TiO2异质结和良好的电子通道,以及Ni-Mo纳米晶合金对溶解氧和激发电子还原反应的催化作用.分别给出了在紫外和可见光下薄膜光催化降解刚果红的反应机理.     

二氧化钛纳米管阵列的构建及其光电催化性能

利用阳极氧化法制备了TiO2纳米管阵列, 研究了其光电化学性能, 并且应用该电极对偶氮染料催化降解进行了初步研究.     

不同导电基底对TiO2薄膜光致亲水性的影响

分别在导电铝合金片(Al)和具有阳极氧化铝层的非导电铝片(AAO/Al), 以及铟锡氧化物导电玻璃(ITO/glass)和普通非导电玻璃(glass)表面通过提拉法制备出TiO2/Al和TiO2/AAO/Al, 以及TiO2/ITO/glass和TiO2/glass两组TiO2薄膜样品, 通过测试紫外光照下水滴接触角的变化考察TiO2薄膜的光致亲水性. 结果表明, 相对于TiO2/Al2O3/Al, 基底导电的TiO2/Al表现出较好的光致亲水性能; 而相对于TiO2/glass, 基底导电的TiO2/ITO/glass表现出较差的光致亲水性能. 分析认为, Al和ITO两导电基底和TiO2薄膜间的不同电子转移方向影响TiO2薄膜的光致亲水性能, Al片提供电子给TiO2有助于提高以光生电子为主要初级活性物种的光致亲水性, 而ITO接受TiO2的光生电子, 导致光致亲水性的下降.     

Cu-TiO_2/ITO膜的制备、表征及其光电化学活性的研究

以甲酸作空穴捕获剂,采用直接光还原法将Cu2+沉积到TiO2膜表面制备纳米Cu TiO2/ITO膜.并分别应用紫外可见光漫反射、X 射线衍射、扫描电镜及光开路电压等实验表征.再以甲酸为模型化合物,研究Cu沉积和外加电场对TiO2光催化活性的协同增强作用.结果表明:沉积在TiO2膜表面的铜是以Cu(0)形式存在,Cu沉积对抑制光生电子 空穴的复合有明显的促进作用.于Cu TiO2/ITO膜电极施加适当正偏压,即能明显提高其催化活性.在本文实验条件下,以外加电场和Cu沉积相结合能使TiO2光催化降解甲酸的速率常数增加2.8倍.     

衬底温度对ZnO薄膜晶体结构和电学性质的影响研究

ZnO films were deposited on glass substrates by gas discharge reaction evaporation. The influences of substrate temperature on the surface morphology, crystal structure and electric properties of ZnO films were studied by scanning electron microscopy, atomic force microscopy, X-ray diffraction spectroscopy and complex impedance spectroscopy. The results show that the films with dense and amorphous structure and lower grain boundary resistance were deposited at room temperature. When the substrate temperature is higher than 50 ℃, the films with certain c-axis orientation can be deposited. With the increase of the substrate temperature, the preferential orientation of ZnO films along c-axis is augmented, the tensile stress along c-axis orientation decreases and the grain boundary resistance increases in a marked degree. When the substrate temperature is higher than 100 ℃, the increasing trend of the preferential orientation of ZnO films along c-axis slows down. ZnO films possess high preferential c-axis orientation and best crystalline quality at 180-200 ℃. These possess a smooth surface, symmetrical grain dimension (i.e. 30-40 nm), inerratic crystal shape, less tensile stress and 0.965 epitaxial degree along the c-axis direction. Here the grain boundary effect increases and the grain boundary resistance is evidently more than that of the films deposited at room temperature. The mechanism by which substrate temperature affects crystal structure and grain boundary properties were also discussed.     

Electrodeposition of selenium from 1-ethyl-3-methyl-imidazolium trifluromethylsulfonate

The electrodeposition of thin selenium (Se) films from 1-ethyl-3-methyl-imidazolium trifluromethylsulfonate at room and elevated temperatures on gold and on copper substrates was studied under open-air conditions. The effect of bath temperature on the composition and structure of the deposited films was examined using cyclic voltammetry, chemical analysis and X-ray diffraction analysis. The obtained results showed that on gold substrate and at room temperature, a reddish Se film grows mainly in amorphous, monoclinic, rhombohedral and hexagonal structure, while at temperatures ≥90 °C, a grayish film of hexagonal and rhombohedral structure is deposited. Photoelectron spectroscopy shows that both films consist of pure Se with only slight surface contaminations by remnants from the electrodeposition. Due to the differences in phase structure and the presence of the monoclinic phase, the reddish films showed higher light absorbance. The band gap of the reddish film is close to that of pure amorphous Se reported in literature. Deposition on copper substrate leads to formation of CuSe and CuSe₂ at room temperature and at 70 °C, respectively.     

Enhancing Electrochemical Reduction of CO_2 to Formate by Regulating the Support Morphology

Electroreduction of CO₂ to formic acid has attracted extensive attention,because it is a promising strategy to re-utilize CO₂ and reduce greenhouse gas emissions that may favor the mitigation of energy and environment issues.Although great efforts have been made to tune the structure and composition of catalysts aiming to improve CO₂ conversion efficiency,seldom studies have been focused on the support regulation.In this work,ordered,porous TiO₂ nanotube arrays have been used as model support to study the impact of pore structure for CO₂ electrochemical reduction.It has been revealed that Pd supported on TiO₂ nanotube arrays substrate exhibits enhanced performance towards CO₂ reduction,showing a higher formate Faradaic efficiency of 20%over than Pd supported on TiO₂ film substrate.This study will shed new light on the design and synthesis of efficient catalysts by tuning the morphology of support for CO₂ conversion.     

高折射率高透明性半脂环聚酰亚胺的合成与性能

采用脂环二酐单体2,3,5-三羧基环戊烷基乙酸二酐(TCAAH)分别与两种含硫芳香族二胺单体,4,4′-双(4-氨基苯硫基)二苯硫醚(3SDA)与2,7-双(4-氨基苯硫基)噻蒽(APTT)通过两步法制备了两种半脂环聚酰亚胺(PI).制备的PI薄膜在可见光波长范围内(400~700 nm)具有优良的透明性,400 nm处的透过率超过85%.此外,该系列薄膜还具有良好的耐热稳定性,氮气中的起始热分解温度超过480℃,玻璃化转变温度超过250℃.PI薄膜在632.8 nm处的折射率大于1.68,双折射小于0.006.为了进一步提高PI薄膜的折射率,初步考察了PI前体溶液聚酰胺酸(PAA)与高折射率无机TiO2纳米粒子的复合工艺.结果表明,PI-TiO2薄膜同样具有良好的透明性,632.8 nm处的折射率达到1.76.     

X-ray absorption of nitrogen-doped amorphous carbon films for determining sp2/sp3 bonding concentrations

A method of analyzing X-ray absorption spectra of nitrogen-doped amorphous carbon (a-C) samples was developed to determine their sp² bonding concentrations. The films under consideration are simultaneously deposited onto polytetrafluoroethylene (PTFE) polymer or silicon wafer substrates by hot wire plasma sputtering of graphite. sp² bonding concentrations of a-C films deposited on PTFE increase from 74% to 93% with growing nitrogen doping. Silicon substrate films yield the same general trend, but show that the near surface electronic structure of a-C films depends on the substrate.     

Investigation of surface topography, morphology and structure of amorphous carbon films by AFM and TEM

Morphology and structure of amorphous carbon films deposited with a pulsed arc source (LASER-ARC) have been studied using microscopical methods (SEM, TEM and AFM), electron diffraction and spectroscopical investigation (EELS). The parameters of the arc source and the deposition conditions (substrate temperature) influence morphology and structure of deposited amorphous carbon films. Especially the incorporation and growth of particles, embedded in the film have been investigated. By particle analysis using an optical microscope a majority of particles that is smaller than 500 nm has been determined. The morphology has been also demonstrated similar by AFM and TEM images. Their number and size of particles is strongly influenced by the deposition temperature. The structure of amorphous film is characterized by the EELS-spectra, but the particle structure was not detectable.