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1.
用新的路径成功地合成了N,N -四(间联苯基)-4,4 -联苯二胺(m TBPBz).以m TBPBz作为正孔传送材料,探讨了它在有机电致发光器件中的应用.制作了结构为玻璃基板/ITO阳极(130nm)/m TBPBz(40nm)/Alq(60nm)/LiF(0.5nm)/Al阴极(100nm)的器件.结果显示:该有机电致发光器件的绿色发光来源于Alq层.10V时,它的最大亮度为9486cd/m2.证明了m TBPBz具有正孔传送性能,可作为电致发光材料使用.  相似文献   

2.
制备了一系列基于配合物Sm(DBM)3phen的电致发光器件. 研究了其光致发光(PL)和电致发光(EL)性质, 实验结果表明, Sm(DBM)3phen具有良好的电子注入和传输性能以及电致发光性能. 器件ITO/TPD(50 nm)/Sm(DBM)3phen(50 nm)/Alq3(30 nm)/LiF(1.0 nm)/Al的最大亮度和最大效率分别为150 cd/m2和0.72 cd/A, 器件表现为纯Sm3+离子的发光.  相似文献   

3.
刘坚  韦春 《无机化学学报》2012,28(2):398-404
合成了一种含有载流子传输基新的铱配合物(BPPBI)2Ir(ECTFBD)[HBPPBI:1-苯基-2-(4-联苯基)苯并咪唑,HECTFBD:1-(9-乙基-3-咔唑基)-4,4,4-三氟-1,3-丁二酮],其结构和组成经核磁共振氢谱和元素分析所证实。研究了这种铱配合物二氯甲烷溶液的光物理和电化学性质。制作了基于这种铱配合物的电致磷光器件。器件结构是ITO/MoO3(10 nm)/NPB(80 nm)/CBP:x%(BPPBI)2Ir(ECTFBD)(20 nm)/TPBi(45 nm)/LiF/Al[x%:质量百分比为4%和7%的掺杂浓度;NPB:N4,N4′-二(1-萘基)-N4,N4′-二苯基-4,4′-联苯二胺,CBP:4,4′-二(9-咔唑基)联苯,TPBi:1,3,5-三(2-(1-苯基)苯并咪唑基)苯]。这些器件显示出深黄色的发射。对于7%掺杂浓度器件,最大的电流效率和最大发光亮度分别是5.2 cd.A-1和8 690 cd.m-2。  相似文献   

4.
通过研究新型荧光染料N-对甲氧苯基咔唑-2-乙烯基-8-羟基喹啉锌(MoBCzHQZn)的电致发光(EL)特性, 发现MoBCzHQZn具有较强的发光特性和空穴传输特性, 利用此特性制备了非掺杂型的有机电致白光器件和掺杂型的有机电致黄光器件. 白光器件的结构为ITO/2T-NATA(20 nm)/MoBCzHQZn(25 nm)/NPBX(13 nm)/BCP(8nm)/Alq3(34 nm)/LiF(0.5 nm)/Al, 器件在15 V电压下实现了白光发射, 色坐标为(0.3719, 0.3275), 最大发光亮度为3414 cd·m-2, 在14 V 电压下的最大发光效率为1.69 cd·A-1、黄光器件的结构为ITO/2T-NATA(20 nm)/CBP:6%Ir(ppy)3:10%MoBCzHQZn(25 nm)/TPBi:6%Ir(ppy)3(47 nm)/LiF(0.5 nm)/Al, 器件在15 V电压下实现了黄绿光发射, 色坐标为(0.3590, 0.5787), 最大发光亮度为11073 cd·m-2, 在9 V电压下的最大发光效率为2.51 cd·A-1.  相似文献   

5.
用经典的方法合成了面式-三(2-(4-三氟甲基苯基)吡啶)合铱配合物(fac-Ir(tfmppy)3),并得到了其晶体结构。在CH2Cl2溶液中Ir(tfmppy)3的发射光谱显示出了峰值位于525 nm的π→π*跃迁吸收以及金属到配体电荷转移(MLCT)吸收,色坐标(CIE)为(0.31,0.62),量子效率计算为4.59%(以Ru(bpy)3]Cl2为参照)。以Ir(tfmppy)3为发光中心,制备并研究了有机电致发光器件:ITO/TAPC(60 nm)/Ir(tfmppy)3(x%)∶mCP(30 nm)/TPBi(60 nm)/LiF(1 nm)/Al(100 nm)。4%掺杂浓度的器件在4 197 cd·m-2的亮度下显示的最大电流效率为33.95 cd·A-1,在12.7 V时的最大亮度为43 612 cd·m-2,色坐标(CIE)为(0.31,0.61)。利用瞬态电致发光法(transient electroluminescence(TEL))、在1 300(V·cm-1)1/2的电场强度下Ir(tfmppy)3配合物的电子迁移率测定为4.24×10-6cm2·(V·s)-1。非常接近于常用的电子传输材料八羟基喹啉铝(Alq3)的电子迁移率。  相似文献   

6.
通过用一种既具有空穴传输特性又具有发光特性的新型荧光染料N-乙基咔唑-2-乙烯基-8-羟基喹啉锌((E)-2-(2-(9-ethyl-9H-carbazol-3-yl)vinyl) quinolato-zinc, CzHQZn)作为受主, 制备了结构为ITO/2T-NATA (30 nm)/CBP: 6%Ir(ppy)3:wCzHQZn(20 nm)/Alq3(50 nm)/LiF/Al(ITO: indium-tin oxide, 2T-NATA: 4,4',4'-{N,N-(2-naphthyl)-N-phenylamino}-triphenylamine, CBP: 4,4-N,N'-dicarbazole-biphenyl, Ir(ppy)3: factris (2-phenylpyridine) iridium, Alq3: tris(8-quinolinolato) aluminum; w 是CzHQZn 的质量分数)的黄绿色有机电致发光器件(OLEDs). 研究了掺杂体系在不同掺杂浓度(w=5%、10%、12%、15%)时的电致发光(EL)特性. 结果表明, CzHQZn 掺杂浓度为10%的器件在11 V 电压下实现了黄绿光发射, 色坐标为(0.4045, 0.5113), 最大发光亮度为16110 cd·m-2; 而在7 V电压下的最大发光效率为2.19 cd·A-1, 最大外量子效率为0.775%.  相似文献   

7.
超薄层在白色有机电致发光器件中的应用   总被引:1,自引:0,他引:1  
以DCJTB为掺杂剂, 以BCP为空穴阻挡层, 研究了两种结构的有机电致发光器件ITO/NPB/BCP/Alq3:DCJTB/Alq3/Al(结构A)和ITO/NPB/BCP/Alq3/Alq3:DCJTB/Alq3/Al(结构B)的电致发光光谱. 实验结果显示, 在结构A器件的电致发光光谱中, 绿光的相对发光强度较弱,增加Alq3层的厚度对绿光的相对发光强度的影响也很小; 而在结构B器件的电致发光光谱中, BCP层与掺杂层(Alq3:DCJTB)之间的Alq3薄层对绿光的相对发光强度影响显著, 用很薄的Alq3层就可以得到强的绿光发射. 进一步改变器件结构, 利用有机超薄层就可以得到稳定的白光器件ITO/NPB(50 nm)/BCP(3 nm)/Alq3(3 nm)/Alq3:DCJTB(1%(w))(5 nm)/Alq3(7 nm)/Al. 随着电压的增加(14-18 V), 该器件的色坐标基本保持在(0.33, 0.37)处不动; 在432 mA·cm-2的电流密度下, 该器件的发光亮度可达11521 cd·m-2.  相似文献   

8.
合成了有机发光材料2-苯基-8-羟基喹啉锌Zn(Q-Ph)2, 通过1H NMR, UV-Vis及MS等手段对配合物进行了结构表征. 利用该材料与高效的红光染料DCJTB复合制备出全新结构的非掺杂型OLED器件, 其结构为ITO/NPB/DCJTB/Zn(Q-Ph)2/AlQ3/Al. 将DCJTB超薄层的厚度调节到0—2.0 nm范围内, OLED器件的发光色调经历了黄光、红光和橙光的转变, 并且探讨了DCJTB厚度对OLED发光机理以及发光复合区域的影响. 当DCJTB的厚度为0.5 nm时, 获得了稳定的红光发射, 该器件在5.5 V电压下启亮, 在25 V外加电压下发光亮度达到420 cd/m2, 对应的电流密度为250 mA/cm2.  相似文献   

9.
使用星形六苯芴类新材料1,2,3,4,5,6-hexakis(9,9-diethyl-9H-fluoren-2-yl)benzene (HKEthFLYPh)分别制备了三种不同结构的有机电致发光器件. 在结构为indium-tin oxide (ITO)/NPB (40 nm)/HKEthFLYPh (10 nm)/Alq3(50 nm)/Mg:Ag (200 nm)的器件中, 获得了两个电致发光谱峰分别位于435 和530 nm处的明亮白光. HKEth-FLYPh是能量传输层; N,N’-bis-(1-naphthyl)-N,N’-diphenyl-(1,1’-biphenyl)-4,4’-diamine (NPB)是空穴传输层和蓝色发光层; tris(8-hydroxyquinoline)aluminum (Alq3)是电子传输层和绿色发光层. 结果表明, 当驱动电压为15 V时, 器件的最大亮度达到8523 cd·m-2; 在5.5 V时, 器件达到最大流明效率为1.0 lm·W-1. 在电压为9 V时, CIE色坐标为(0.29, 0.34). 此外, 通过改变HKEthFLYPh层的厚度, 发现蓝色发射的相对强度随着HKEthFLYPh层厚度的增加而增强.  相似文献   

10.
将Alq3[tris(8-hydroxyquinoline)aluminium]和Eu(TTA)3phen(TTA=thenoyltrifluoroacetone,phen=1,10-phenanthroline)共掺杂进入主体材料CBP(4,4′-N,N′-dicarbazole-biphenyl)中,我们制作并研究了一系列电致发光器件。经过优化Alq3的掺杂浓度,在不改变色纯度的情况下,器件的效率滚降被大幅降低并获得了近乎加倍的最大亮度。发光层中的Alq3分子不仅促进了电子的注入和传输,还延缓了空穴的传输。借助电致发光光谱,我们证实Alq3分子作为阶梯加速空穴从CBP分子到Eu(TTA)3phen分子的迁移,从而促进了电子和空穴在Eu(TTA)3phen分子上的平衡。因此,我们认为器件的效率滚降受到抑制的原因有两点:一是复合区间的加宽,二是Eu(TTA)3phen分子上空穴和电子的分布更加平衡。  相似文献   

11.
Organic light-emitting devices(OLEDs) with the structure of indium-tin-oxide(ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine(NPB)/2,9-dimenthyl-4,7-diphenyl-1,10-phenanthroline(BCP)/tris(8-hydroxyquinoline)aluminum(Alq3)/Mg:Ag or that of ITO/NPB/1,2,3,4,5,6-hexakis(9,9-diethyl-9H-fluoren-2-yl)benzene(HKEthFLYPh)/Alq3/Mg:Ag were studied.White light emission was achieved with the two devices when the thicknesses of BCP and HKEthFLYPh were 1.5 nm(device B) and 5 nm(device II),respectively...  相似文献   

12.
Yu J  Zhou L  Zhang H  Zheng Y  Li H  Deng R  Peng Z  Li Z 《Inorganic chemistry》2005,44(5):1611-1618
The syntheses, structures, and electroluminescent properties are described for two new lanthanide complexes Ln(HFNH)3phen [HFNH = 4,4,5,5,6,6,6-heptafluoro-1-(2-naphthyl)hexane-1,3-dione; phen = 1,10-phenanthroline; Ln = Eu3+ (1), Sm3+ (2)]. Both complexes exhibit bright photoluminescence at room temperature (RT) due to the characteristic emission of Eu3+ and Sm3+ ion. Several devices using the two complexes as emitters were fabricated. The performances of these devices are among the best reported for devices using europium complex and samarium complex as emitters. The device based on 1 with the structure ITO/TPD (50 nm)/1:CBP (10%, 40 nm)/BCP (20 nm)/AlQ (30 nm)/LiF (1 nm)/Al (200 nm) exhibits the maximum brightness of 957 cd/m2, current efficiency of 4.14 cd/A, and power efficiency of 2.28 lm/W with a pure red Eu3+ ion emission. Especially, at the high brightness of 200 cd/m2, the device of 1 still has a high current efficiency of 2.15 cd/A. The device of 2 with a three-layer structure of ITO/TPD (50 nm)/2 (50 nm)/BCP (20 nm)/LiF (1 nm)/Al (200 nm) gives the maximum brightness of 42 cd/m2, current efficiency of 0.18 cd/A. By the comparison of the electroluminescent properties of devices based on Eu(TTA3phen (TTA = 2-thenoyltrifluoroacteonate) and 1, we conclude that the polyfluoration on the alkyl group of the ligand and the introduction of the long conjugate naphthyl group into the ligand improve the efficiency of 1-doped devices, especially at high current densities.  相似文献   

13.
多芳胺取代均三嗪的合成及其光电性能的研究   总被引:1,自引:0,他引:1  
王光荣  曾和平 《有机化学》2009,29(7):1115-1121
设计合成了一个新的带有三支链的均三嗪衍生物分子: 2,4,6-三[4-(N,N-二对甲苯基)-苯胺乙基]均三嗪(TBTN); 用1H NMR, 13C NMR, IR, MS (MALDI-TOF)和元素分析确认了化合物的结构. 研究了该化合物的紫外吸收光谱、荧光光谱、电致发光光谱等性能, 用TBTN组装发光器件, 实验结果显示TBTN为发光层时, 该器件能发出稳定白光. 器件结构为ITO/2-TNATA (30 nm)/NPB (20 nm)/TBTN (30 nm)/Alq3 (30 nm)/LiF (0.5 nm)/Al, 在电压为15 V获得最大亮度是1523 cd/m2, 在驱动电压范围内CIE(国际照明委员会)坐标稳定并在白色等能区内.  相似文献   

14.
Molecular glass material (4-(5-(4-(diphenylamino)phenyl)-2-oxadiazolyl)phenyl)triphenylsilane (Ph(3)Si(PhTPAOXD)) was used as the blue light-emitting material in the fabrication of high-performance organic light-emitting diodes (OLEDs). In the optimization of performance, five types of OLEDs were constructed from Ph(3)Si(PhTPAOXD): device I, ITO/NPB/Ph(3)Si(PhTPAOXD)/Alq(3)/Mg:Ag, where NPB and Alq(3) are 1,4-bis(1-naphylphenylamino)biphenyl and tris(8-hydroxyquinoline)aluminum, respectively; device II, ITO/NPB/Ph(3)Si(PhTPAOXD)/TPBI/Mg:Ag, where TPBI is 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene; device III, ITO/Ph(2)Si(Ph(NPA)(2))(2)/Ph(3)Si(PhTPAOXD)/TPBI/Mg:Ag, where Ph(2)Si(Ph(NPA)(2))(2) is bis(3,5-bis(1-naphylphenylamino)phenyl)-diphenylsilane, a newly synthesized tetraphenylsilane-containing triarylamine as hole-transporting material; device IV, ITO/Ph(2)Si(Ph(NPA)(2))(2)/NPB/Ph(3)Si(PhTPAOXD)/TPBI/Mg:Ag; device V, ITO/CuPc/NPB /Ph(3)Si(PhTPAOXD)/Alq(3)/LiF/Al, where CuPc is Cu(II) phthalocyanine. Device performances, including blue color purity, electroluminescence (EL) intensity, current density, and efficiency, vary drastically by changing the device thickness (100-600 A of the light-emitting layer) and materials for hole-transporting layer (NPB and/or Ph(2)Si(Ph(NPA)(2))(2)) or electron-transporting material (Alq(3) or TPBI). One of the superior OLEDs is device IV, showing maximum EL near 19 000 cd/m(2) with relatively low current density of 674 mA/cm(2) (or near 3000 cd/m(2) at 100 mA/cm(2)) and high external quantum efficiency of 2.4% (1.1 lm/W or 3.1 cd/A). The device possesses good blue color purity with EL emission maximum (lambda(max)(EL)) at 460 nm, corresponding to (0.16, 0.18) of blue color chromaticity on CIE coordinates. In addition, the device is reasonably stable and sustains heating over 100 degrees C with no loss of luminance on the basis of the annealing data for device V. Formation of the exciplex at the interface of NPB and Ph(3)Si(PhTPAOXD) layers is verified by EL and photoluminescence (PL) spectra studies on the devices with a combination of different charge transporting materials. The EL due to the exciplex (lambda(max)(EL) at 490-510 nm) can be properly avoided by using a 200 A layer of Ph(3)Si(PhTPAOXD) in device I, which limits the charge-recombination zone away from the interface area.  相似文献   

15.
Organic electroluminescent devices (OELDs) have attracted much attention for several years because of their potential application in large area, multi-colored flat panel displays1-5. The green organic EL display using Alq3 as emitter was commercialized in 19976. However, red-emitting OELD with excellent properties has not been well developed. In order to realize practical full-color OELDs, it is considered very important to develop red and blue emitting materials with excellent propert…  相似文献   

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