MX2型二维半导体载流子迁移率理论预测

为找到未来半导体晶体管合适的沟道材料,计算了14种MX_2(其中M=Mo,W,Sn,Hf,Zr和Pt,X=S,Se和Te)型二维半导体载流子有效质量、带隙以及电子和空穴迁移率。在计算过程中,为了快速对载流子迁移率进行估计,利用形变势的近似电声耦合矩阵元。计算时考虑长波光学声子和声学声子的散射,而在极化晶体中,考虑了极化散射。计算结果表面,WS_2,PtS_2以及PtSe_2具有最高的电子迁移率以及非零的带隙。其中,PtSe_2的电子在室温下的理论迁移率上限为4000 cm~2·V~(-1)·s~(-1),而W,Hf和Zr的二维化合物室温时的空穴迁移率较高,其中含W的化合物理论迁移率上限到2600 cm~2·V~(-1)·s~(-1)。该计算研究为实验合成高迁移率的二维材料提供指导,同时为实验获得高性能以二维材料作为沟道的场效应晶体管提供参考,加速二维材料的应用。     

第一性原理的形变势理论研究声学声子散射对电荷传输的影响

本文应用密度泛函理论和玻尔兹曼方程,在形变势理论的框架和驰豫时间近似下,研究了分子晶体中电子与声学声子散射对电荷传输的影响.针对蒽、萘、丁省和并五苯的计算表明,非局域化电子的传输过程主要受到来自于声学声子的散射.对于蒽晶体,与以前的Holstein-Peierls模型计算结果相比,发现纵向声学声子对空穴的散射强度是光学声子的3倍,所得到的空穴迁移率更接近超纯单晶样品的实验测量结果.同时,我们发现电子的本征迁移率比空穴还要大,应用前线轨道交叠分析可以合理地解释这一结果.     

基于3d元素掺杂的石墨二炔分子传感材料性能调控

二维碳材料因其独特的性质成为凝聚态物理、纳米电子学、生物医药等领域的前沿研究热点。石墨二炔具有天然的半导体特性及独特的大孔网状结构,在纳米电子器件和生物传感方面比石墨烯更具优势。本文使用第一性原理计算研究了单层石墨二炔的纳米带电子输运性质和及石墨二炔对小分子的吸附。我们考虑用掺杂3d金属原子的方法来增强对分子的吸附力。选择在石墨二炔表面吸附能较大的钪(Sc)、钛(Ti)原子,确定石墨二炔表面Sc、Ti单原子在室温下的稳定性,研究了Sc、Ti掺杂石墨二炔用于分子检测的潜在可能。从能带、载流子浓度等方面全面探讨了Sc、Ti掺杂石墨二炔对甲醛分子(HCHO)的响应。又进一步研究了石墨二炔与氨基酸分子间相互作用,发现色散力在相互作用中占主导地位。研究了吸附氨基酸对石墨二炔电子输运的影响,探讨石墨二炔在生物传感方面的潜在应用。     

石墨二炔及其电子转移增强特性

石墨二炔是由sp和sp~2杂化的碳原子构成的新的碳同素异形体。由于石墨二炔具有独特的拓扑结构和电子结构、较高的电荷迁移率及优异的电子传输性能,使其与其他材料相互作用,可表现出独特的电子转移增强特性。本文基于石墨二炔的电子转移增强特性,概述了石墨二炔及其电子转移增强特性的最新研究进展,包括金属氧化物/石墨二炔、金属纳米颗粒/石墨二炔、聚合物/石墨二炔以及染料分子/石墨二炔等多种石墨二炔基材料。本文从理论和实验研究两个方面详细阐述了石墨二炔的电子转移增强特性、石墨二炔与不同材料的相互作用以及相关的应用。希望该综述能对石墨炔化学的发展起到一定的积极作用。     

二维碳石墨炔的结构及其在能源领域的应用

从二维碳材料石墨炔(GDY)的分子和电子结构出发,重点论述石墨炔在能源存储和转换两个领域的应用,包括最新的理论和实验进展。石墨炔独特的三维孔隙结构,使得石墨炔在锂存储和氢气存储应用中具备天然的优势,既可以用作锂离子相关的储能器件,包括锂离子电池、锂离子电容器等;也可作为储氢材料,用于燃料电池等。通过掺杂的方法,还能进一步提高石墨炔储锂和储氢的性能。由于sp炔键和sp~2苯环的存在,使石墨炔具有多重共轭的电子结构,在具备狄拉克锥的同时,其带隙也可通过多种途径调控,使得石墨炔不仅可以作为非金属高活性催化剂替代贵金属在光催化等方面应用,还可以在太阳能电池的空穴传输层和电子传输层方面获得应用,展现了石墨炔在能源方面独特的应用价值。我们将从理论预测和实验研究两方面介绍该领域目前的研究现状和发展趋势。     

二维半导体材料与器件——从传统二维光电材料到石墨炔

近年来,二维半导体材料由于其独特的材料结构和电子输运特性得到了科学界的广泛关注,被应用于光电器件、催化和生物传感器等领域。本文系统概述了传统二维材料以及新兴二维材料石墨炔的发现和发展历程。重点聚焦在二维材料在光探测器领域中的应用,探讨了不同二维材料体系及器件结构对光探测器性能的影响;并详细介绍了新兴二维材料——石墨炔,及其合成和应用。展望了传统二维材料及石墨炔在光电转换器件的应用中所面临的机遇和挑战。     

二维半导体材料与器件——从传统二维光电材料到石墨炔

近年来,二维半导体材料由于其独特的材料结构和电子输运特性得到了科学界的广泛关注,被应用于光电器件、催化和生物传感器等领域。本文系统概述了传统二维材料以及新兴二维材料石墨炔的发现和发展历程。重点聚焦在二维材料在光探测器领域中的应用,探讨了不同二维材料体系及器件结构对光探测器性能的影响;并详细介绍了新兴二维材料——石墨炔,及其合成和应用。展望了传统二维材料及石墨炔在光电转换器件应用中所面临的机遇和挑战。     

第一性原理研究有机分子晶体中电声子耦合的压强效应

电声子耦合系数是决定有机分子体系电荷传导过程的最重要因素之一,研究电声子耦合对理解有机分子晶体中的本征电荷传输机制有重要的意义.从实验得到的晶体结构出发,使用密度泛函理论计算出电子结构和声子模式,再投影到紧束缚模型,通过数值拟合和有限差分,计算出各个声子模的电声子耦合系数,进一步还可以研究随压强变化的关系.以萘晶体为例,计算表明,声子频率随压强增加,但电声耦合强度随压强增大而减小,对迁移率起到促进作用.     

点缺陷石墨烯的电导（英文）

作为纳米材料中最有前途的的材料之一,石墨烯由于其超高的电导率、优异的热稳定性和机械强度受到了研究者的广泛关注。本文通过非平衡格林函数法结合密度泛函理论计算了石墨烯点缺陷(包括Stone-Waals,反Stone-Waals,单空位和双空位)及其浓度对石墨烯电输运性质的影响。石墨烯的电导在很大程度上依赖于点缺陷的类型及浓度。低浓度的Stone-Waals和反Stone-Waals缺陷不会显著地降低石墨烯的电输运,而双空位可使电导降低约50%左右。石墨烯中明显的电输运行为变化是由带缺陷石墨烯的能带结构决定的——由于点缺陷破坏了石墨烯蜂窝状晶格的对称性,会在费米能级附近引入局域态,进而导致狄拉克点处有能带劈裂。高缺陷浓度的双空位会在费米能级附近引入更多的平带以及在缺陷处更多的局域态,因此可能对载流子进行一定的散射,降低石墨烯的电导。此外,局部电荷密度表现出增强的局域性,阻碍了载流子的运动。石墨烯电导随着缺陷浓度和能带劈裂的增加呈指数下降。这些理论结果为研究真实单层石墨烯的电输运特性提供了重要的理解,并将有助于实验上控制石墨烯基器件的性能。     

新型光催化材料石墨炔-TiO2的第一性原理研究

采用基于色散矫正密度泛函理论的第一性原理方法,研究石墨炔和石墨烯对TiO2光催化性能提高的机理.通过研究发现在石墨炔-TiO2(101)复合物中,石墨炔和TiO2(101)间相互作用较强,TiO2(101)表面上的O原子和其top位的C原子形成离域性强的C—O共价键.电子密度,电子差分密度和Mulliken电荷的计算结果显示,石墨炔复合TiO2(101)晶面更有利于电子在界面间的转移,并减低电子-空穴的复合率.通过对电子结构的分析发现,在石墨炔-TiO2(101)复合物的带隙中引入了多条杂质能级,而石墨烯-TiO2(101)复合物的带隙中没有杂质能级的出现.杂质能级能够为光激发时电子的跃迁提供辅助平台作用,有利于光催化性能的提高.同时石墨炔-TiO2(101)复合物的价带位置比石墨烯-TiO2(101)复合物更低,说明其氧化能力更强,有利于其光催化性能的提高.     

蓝宝石衬底上化学气相沉积法生长石墨烯

化学气相沉积(CVD)法是制备大面积、高质量石墨烯材料的主要方法之一,但存在衬底转移和碳固溶等问题,本文选用蓝宝石衬底弥补了传统CVD法的不足。利用CVD法在蓝宝石衬底上生长石墨烯材料,研究生长温度对石墨烯表面形貌和晶体质量的影响。原子力显微镜(AFM)、光学显微镜(OM)、拉曼光谱和霍尔测试表明,低温生长有利于保持材料表面的平整度,高温生长有利于提高材料的晶体质量。研究氢气和碳源对蓝宝石衬底表面刻蚀作用机理,发现氢气对蓝宝石衬底有刻蚀作用,而单纯的碳源不能对衬底产生刻蚀效果。在1200℃下,直径为50 mm的晶圆级衬底上获得平整度和质量相对较好的石墨烯材料,室温下载流子迁移超过1000 cm~2?V~(-1)?s~(-1)。     

HS+HO_2气相反应机理及主通道速率常数的理论研究

采用CCSD(T)/6-311++G(3df,2pd)//B3LYP/6-311+G(2df,2p)双水平计算方法构建了HO_2+HS反应体系的单、三重态反应势能面,并对该反应主通道的速率常数进行了研究。研究结果表明,标题反应经历了八条反应通道,其中三重态反应通道R1是标题反应主通道。此通道包含路径Path 1(R→~3IM1→~3TS1→P1(~3O_2+H_2S))和Path 1a(R→~3IM1a→~3TS1a→P1(~3O_2+H_2S))两条路径。利用经典过渡态理论(TST)与变分过渡态理论(CVT)并结合小曲率隧道效应模型(SCT),分别计算了主路径Path 1和Path 1a在200-800 K温度范围内的速率常数k~(TST)、k~(CVT)和k~(CVT/SCT),在此温度区间内路径Path 1和Path 1a具有负温度系数效应。速率常数计算结果显示,对主路径Path 1和Path 1a而言,变分效应在计算温度段内有一定影响,与此同时量子力学隧道效应在低温段有显著影响。路径Path 1和Path 1a的CVT/SCT速率常数的三参数表达式分别为k_1~(CVT/SCT)(200-800 K)=1.54×10~(-5)T~(-2.70)exp(1154/T)cm~3?molecule~(-1)?s~(-1)和k_(1a)~(CVT/SCT)(200-800 K)=5.82×10~(-8)T~(-1.84)exp(1388/T)cm~3?molecule~(-1)?s~(-1)。     

参杂缺陷石墨烯的高分子复合材料导热特性分子动力学模拟

Polymers are widely used advanced materials composed of macromolecular chains, which can be found in materials used in our daily life. Polymer materials have been employed in many energy and electronic applications such as energy harvesting devices, energy storage devices, light emitting and sensing devices, and flexible energy and electronic devices. The microscopic morphologies and electrical properties of the polymer materials can be tuned by molecular engineering, which could improve the device performances in terms of both the energy conversion efficiency and stability. Traditional polymers are usually considered to be thermal insulators owing to their amorphous molecular chains. Graphene-based polymeric materials have garnered significant attention due to the excellent thermal conductivity of graphene. Advanced polymeric composites with high thermal conductivity exhibit great potential in many applications. Therefore, research on the thermal transport behaviors in graphene-based nanocomposites becomes critical. Vacancy defects in graphene are commonly observed during its fabrication. In this work, the effects of vacancy defects in graphene on thermal transport properties of the graphene-polyethylene nanocomposite are comprehensively investigated using molecular dynamics (MD) simulation. Based on the non-equilibrium molecular dynamics (NEMD) method, the interfacial thermal conductance and the overall thermal conductance of the nanocomposite are taken into consideration simultaneously. It is found that vacancy defects in graphene facilitate the interfacial thermal conductance between graphene and polyethylene. By removing various proportions of carbon atoms in pristine graphene, the density of vacancy defects varies from 0% to 20% and the interfacial thermal conductance increases from 75.6 MW·m⁻²·K⁻¹ to 85.9 MW·m⁻²·K⁻¹. The distinct enhancement in the interfacial thermal transport is attributed to the enhanced thermal coupling between graphene and polyethylene. A higher number of broken sp² bonds in the defective graphene lead to a decrease in the structure rigidity with more low-frequency (< 15 THz) phonons. The improved overlap of vibrational density states between graphene and polyethylene at a low frequency results in better interfacial thermal conductance. Moreover, the increase in the interfacial thermal conductance induced by vacancy defects have a significant effect on the overall thermal conductance (from 40.8 MW·m⁻²·K⁻¹ to 45.6 MW·m⁻²·K⁻¹). In addition, when filled with the graphene layer, the local density of polyethylene increases on both sides of the graphene. The concentrated layers provide more aligned molecular arrangement, which result in better thermal conductance in polyethylene. Further, the higher local density of the polymer near the interface provides more atoms for interaction with the graphene, which leads to stronger effective interactions. The relative concentration is insensitive to the density of vacancy defects. The reported results on the thermal transport behavior of graphene-polyethylene composites provide reasonable guidance for using graphene as fillers to tune the thermal conduction of polymeric composites.     

过氧硝酸乙酰酯分解反应的速率常数

在G3MP2B3结构优化和能量计算的基础上, 采用RRKM理论和疏松过渡态模型重新估算了过氧硝酸乙酰酯(PAN)的热分解反应PAN→CH₃C(O)OO+NO₂(R1)的反应速率常数, 得到与实验值吻合的结果.用同样的模型计算了PAN→CH₃C(O)O+NO₃(R2)的反应速率常数. 结果表明, 在相同的反应条件下, R1是主要的分解通道, R2是次要通道, R2的反应速率常数比R1的小两个数量级.     

High performance organic transistors and phototransistors based on diketopyrrolopyrrole-quaterthiophene copolymer thin films fabricated via low-concentration solution processing

Herein, highly crystalline diketopyrrolopyrrole-quaterthiophene copolymer thin films were achieved by a simple low-concentration solution processing with a little material waste, which exhibit efficient charge transport and optoelectronic properties for constructing high performance OFET and phototransistors.     

Novel n-channel organic semiconductor based on pyrene-phenazine fused monoimide and bisimides

Large-conjugated pyrene-phenazine monoimide and bisimides were synthesized. Their self-assembly behavior, electric properties, and colorimetric acid sensing performance were investigated.     

石墨烯电子器件的研究进展

石墨烯是一种sp²杂化的平面类蜂窝型二维结构材料,特殊的结构赋予其许多优良的性能,如导电、导热性能好,载流子迁移率高和透射性好等,使其在电子器件领域表现出巨大潜力。 本文从石墨烯在三维集成电路中的应用、石墨烯场效应晶体管、石墨烯有机发光二极管及化学传感器四方面综述了石墨烯电子器件的研究进展及现状。     

A homopolymer based on double B←N bridged bipyridine as electron acceptor for all-polymer solar cells

A homopolymer based on double B ← N bridged bipyridine was reported as a novel polymer electron acceptor. The resulting all-polymer solar cells show power conversion efficiencies of 2.44%–3.04%.     

Solution-grown aligned crystals of diketopyrrolopyrroles(DPP)-based small molecules:Rough surfaces and relatively low charge mobility

Field-effect transistors(FETs) of three diketopyrrolopyrroles(DPP)-based small molecules, 3,6-bis(5-phenylthiophene-2-yl)-2,5-bis(2-ethylhexyl)pyrrolopyrrole-1,4-dione(PDPPP), 3,6-bis(5-(4-fluorophenyl)thiophene-2-yl)-2,5-bis(2-ethylhexyl)pyrrolo pyrrole-1,4-dione(FPDPPPF) and 3,6-bis(5-(4-n-butylphenyl)thiophene-2-yl)-2,5-bis(2-ethylhexyl)pyrrolo pyrrole-1,4-dione(Bu PDPPPBu), have been studied in this work. Well aligned crystals of the three molecules were grown from para-xylene by droplet-pinned crystallization method. FETs based on these aligned crystals exhibit a hole mobility up to0.19 cm~2 V 1s 1and electron mobility up to 0.008 cm~2 V 1s 1. The achieved hole mobility is of the same order of magnitude as reported highest hole mobility for DPP-based small molecules, but it is much lower than that of the high-performance DPP-based polymers. The relative low mobility is mainly attributed to the rough crystal surfaces with steps and, thus, non-smooth charge transport channels at the interfaces between the crystals and the dielectrics. This work has implications for understanding the low charge mobility of DPP-based small molecules.     

Hexyl substitution of pentathienoacene toward a significant improvement in charge transport

The introduction of hexyl chains endows the semiconductor with two or three orders of magnitudes enhancement in carrier mobility or current on/off ratio respectively.