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1.
Thermoelectric properties of polycrystalline La1−xSrxCoO3, where Sr2+ is substituted in La3+ site in perovskite-type LaCoO3, have been investigated. Sr-doping increases the electrical conductivity (σ) of La1−xSrxCoO3, and also decreases the Seebeck coefficient (S) for 0.01?x?0.40. A Hall coefficient measurement reveals that the increase in electrical conductivity arises from increases in both carrier concentration and the Hall mobility. The decrease in the Seebeck coefficient is caused by a decrease in carrier effective mass as well as increase in carrier concentration. The highest power factor (σS2) is 3.7×10−4 W m−1 K−2 at 250 K for x=0.10. The thermal conductivity (κ) is about 2 W m−1 K−1 at 300 K for 0?x?0.04, and increases for x?0.05 because of an increase in heat transport by conductive carrier. The thermoelectric properties of La1−xSrxCoO3 are improved by Sr-doping, and the figure of merit (Z=σS2 κ−1) reaches 1.6×10−4 K−1 for x=0.06 at 300 K (ZT=0.048). For heavily Sr-doped samples, the thermoelectric properties diminish mainly because of the decrease in the Seebeck coefficient and the increase in thermal conductivity.  相似文献   

2.
The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT=S2σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and K is the thermal conductivity. ZT can be increased by increasing S, increasing σ, or decreasing K. We have prepared the thermoelectric generator device of SiO2/SiO2+Ge multilayer superlattice films using the ion beam assisted deposition (IBAD). The 5 MeV Si ion bombardments have been performed using the AAMU Pelletron ion beam accelerator at five different fluences to make quantum structures (nanodots and/or nanoclusters) in the multilayer superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after MeV Si ions bombardments at the different fluences we have measured the cross-plane Seebeck coefficient, the cross-plane electrical conductivity, and the cross-plane thermal conductivity, Raman spectra to get some information about the sample structure and bond structures among the used elements in the superlattice thin film systems.  相似文献   

3.
Single crystals of SrAl2Si2 were synthesized by reaction of the elements in an aluminum flux at 1000 °C. SrAl2Si2 is isostructural to CaAl2Si2 and crystallizes in the hexagonal space group P-3m1 (90 K, a=4.1834 (2), c=7.4104 (2) Å, Z=1, R1=0.0156, wR2=0.0308). Thermal analysis shows that the compound melts at ∼1020 °C. Low-temperature resistivity on single crystals along the c-axis shows metallic behavior with room temperature resistivity value of ∼7.5 mΩ cm. High-temperature Seebeck, resistivity, and thermal conductivity measurements were made on hot-pressed pellets. The Seebeck coefficient shows negative values in entire temperature range decreasing from ∼−78 μV K−1 at room temperature to −34 μV K−1 at 1173 K. Seebeck coefficients are negative indicating n-type behavior; however, the temperature dependence is consistent with contribution from minority p-type carriers as well. The lattice contribution to the thermal conductivity is higher than for clathrate structures containing Al and Si, approximately 50 mW cm−1 K, and contributes to the overall low zT for this compound.  相似文献   

4.
The comprehensive study of conductivity σ, Hall coefficient RH and Seebeck coefficient S has been carried out on high-quality single crystals of CeB6 in a wide range of temperatures 1.8-300 K. An anomalous behavior of all transport characteristics (σ, RH, S) was found for the first time in the vicinity of T*≈80 K. The strong decrease of conductivity σ as well as the unusual asymptotic behavior of Seebeck coefficient S(T)∼−ln T observed below T* allowed us to conclude in favor of crossover between different regimes of charge transport in CeB6. The pronounced change of Hall mobility μH, which diminishes from the maximum value of 20 cm2/(V s) at T* to the values of ∼6 cm2/(V s) at T∼10 K, seems to be attributed to the strong enhancement of charge carriers scattering due to fast spin fluctuations on Ce-sites. The low-temperature anomalies of the charge transport characteristics are compared with the predictions of the Kondo-lattice model.  相似文献   

5.
Titanium-doped single crystals (cTi=0-2×1020 atoms cm−3) were prepared from the elements Sb, Ti, and Te of 5 N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 3-300 K. It was observed that with an increasing Ti content in the samples the electrical resistivity, the Hall coefficient and the Seebeck coefficient increase. This means that the incorporation of Ti atoms into the Sb2Te3 crystal structure results in a decrease in the concentration of holes in the doped crystals. For the explanation of the observed effect a model of defects in the crystals is proposed. The data of the lattice thermal conductivity were fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons.  相似文献   

6.
Thermoelectric properties of some metal borides   总被引:1,自引:0,他引:1  
Polycrystalline AlMgB14 and some hexaborides (CaB6, SrB6, YbB6, SmB6, and CeB6) were synthesized to examine their thermoelectric properties. Single phase of orthorhombic AlMgB14, which contains B12 icosahedral clusters as building blocks, was obtained at sintering temperatures between 1573 and 1823 K. Seebeck coefficient (α) and electrical conductivity (σ) of the phase were about 500 μV/K and 10−1 1/Ω m at room temperature, respectively. These values are comparable to those of metal-doped β-rhombohedral boron. On the other hand, metal hexaborides with divalent cation possessed large negative α ranging from −100 to −270 μV/K at 1073 K. Calculated power factors of CaB6 and SrB6 exceeded 10−3 W/K2 m within the entire range of temperature measured. As a result, they can be thought as promising candidates for n-type thermoelectric material.  相似文献   

7.
Hydrothermally synthesized AgPbmSbSem+2 (m=10, 12, 16, 18) nanoparticles with diameters of 20-50 nm were compacted by pressureless sintering. The Seebeck coefficient and electrical conductivity of the samples were measured from room temperature up to ∼750 K. The samples show large and positive values of the Seebeck coefficient and moderate electrical conductivity. The thermoelectric properties of AgxPb18SbSe20 (x=0.8, 0.85) and AgPb18SbSe20−yTey (y=1, 3) samples have also been studied. It has been found that Ag0.85Pb18SbSe20 sample has a higher thermoelectric power factor. A significant difference in thermoelectric properties has also been observed for the AgPb18SbSe20 samples prepared with pressureless sintering and spark plasma sintering.  相似文献   

8.
Large samples (6-8 g) of Yb11Sb10 and Ca11Sb10 have been synthesized using a high-temperature (1275-1375 K) flux method. These compounds are isostructural to Ho11Ge10, crystallizing in the body-centered, tetragonal unit cell, space group I4/mmm, with Z=4. The structure consists of antimony dumbbells and squares, reminiscent of Zn4Sb3 and filled Skutterudite (e.g., LaFe4Sb12) structures. In addition, these structures can be considered Zintl compounds; valence precise semiconductors with ionic contributions to the bonding. Differential scanning calorimetry (DSC), thermogravimetry (TG), resistivity (ρ), Seebeck coefficient (α), thermal conductivity (κ), and thermoelectric figure of merit (zT) from room temperature to at minimum 975 K are presented for A11Sb10 (A=Yb, Ca). DSC/TG were measured to 1400 K and reveal the stability of these compounds to ∼1200 K. Both A11Sb10 (A=Yb, Ca) materials exhibit remarkably low lattice thermal conductivity (∼10 mW/cm K for both Yb11Sb10 and Ca11Sb10) that can be attributed to the complex crystal structure. Yb11Sb10 is a poor metal with relatively low resistivity (1.4 mΩ cm at 300 K), while Ca11Sb10 is a semiconductor suggesting that a gradual metal-insulator transition may be possible from a Ca11−xYbxSb10 solid solution. The low values and the temperature dependence of the Seebeck coefficients for both compounds suggest that bipolar conduction produces a compensated Seebeck coefficient and consequently a low zT.  相似文献   

9.
The compound CsSn2F5 has been investigated over the temperature range from ambient to 545 K using differential scanning calorimetry, impedance spectroscopy and neutron powder diffraction methods. A first-order phase transition is observed from DSC measurements at 510(2) K, to a phase possessing a high ionic conductivity (σ∼2.5×10−2 Ω−1 cm−1 at 520 K). The crystal structure of the high temperature superionic phase (labelled α) has been determined to be tetragonal (space group I4/mmm, a=4.2606(10) Å, c=19.739(5) Å and Z=2) in which the cations form layers perpendicular to the [001] direction, with a stacking sequence CsSnSnCsSnSn… All the anions are located in two partially occupied sites in the gap between the Cs and Sn layers, whilst the space between the Sn cations is empty, due to the orientation of the lone-pair electrons associated with the Sn2+. The structure of α-CsSn2F5 is discussed in relation to two other layered F conducting superionic phases containing Sn2+ cations, α-RbSn2F5 and α-PbSnF4 and, to facilitate this comparison, an improved structural characterisation of the former is also presented. The wider issue of the role of lone-pair cations such as Sn2+ in promoting dynamic disorder within an anion substructure is also briefly addressed.  相似文献   

10.
The La(Mn0.5Co0.5)1−xCuxO3−δ series with x=0, 0.05, 0.1, 0.2, 0.4, 0.6, 0.8 and 1 was synthesized by the Pechini method to obtain insight into the phase formation in the quasi-ternary LaMnO3-LaCoO3-“LaCuO3” system caused by the instability of LaCuO3 under ambient conditions. After sintering at 1100°C some remarkable results were obtained: LaMn0.3Co0.3Cu0.4O3−δ crystallized as a single phase in the orthorhombic perovskite structure typical of LaCuO3. Among the synthesized compositions this compound showed the highest electrical conductivity in air at 800°C (155 S cm−1) and also the highest thermal expansion coefficient (α30−800°C=15.4×10−6 K−1). The LaCuO3−δ composition also crystallized as a single phase but in a monoclinic structure although previous investigations have shown that other phases are preferably formed after sintering at 1100°C. The electrical conductivity and thermal expansion coefficient were the lowest within the series of compositions, i.e. 9.4 S cm−1 and 11.9×10−6 K−1, respectively.  相似文献   

11.
Measurements of the electrical DC and AC conductivities were performed on three Fe-phosphate compounds in the temperature range ∼210 K?T?∼450 K. The Fe-phosphates are semiconducting with activation energy of DC conductivity σDC of EA∼0.35-0.45 eV. For α-Fe2PO4O, the AC conductivity σAC in the low-temperature range is considerably enhanced relative to σDC. The frequency dependence of σAC can be described by an approximate power law. For the same compound, the thermopower Θ (Seebeck effect) was found to be positive in the range ∼330 K?T?∼700 K, i.e. seemingly p-type conduction occurs; at T>700 K, Θ appears to become negative. The results are described in terms of a small polaron hopping model between localized states with electron transfer of the type Fe2+→Fe3+ with Fe2+ as donors. In this model Θ can be described suggesting equal concentrations of Fe2+ and Fe3+ to take part in conduction.  相似文献   

12.
Melting reactions of Cu, CuCl, S, and Bi2S3 yield black, shiny needles of Cu22(1)Bi12S21(1)Cl16(1). The compound decomposes peritectically at 649(5) K. Oxidation state +I of the copper atoms is supported by Cu-K-XANES. The compound crystallizes in the hexagonal space group P6/m with a=2116.7(7) pm and c=395.17(5) pm. Seven anions coordinate each of the two independent bismuth cations in the shape of mono-capped trigonal prisms. These polyhedra share edges and faces to form trigonal and hexagonal tubes running along [0 0 1]. The hexagonal tubes are centered by chloride ions, which are surrounded by disordered copper cations. The majority of copper cations are distributed over numerous sites between the tubes. The Joint Probability Density Function (JPDF) reveals a continuous pathway along [0 0 1]. The high mobility of the copper cations along [0 0 1] was demonstrated by impedance spectroscopy and DC polarization measurements on single crystals. The ionic conductivity at 450 K is about σion=0.06 S cm−1, and the activation energy for Cu+ ion conduction is Ea=0.44 eV. The chemical diffusion coefficient of copper is in the order of Dcuδ=1019 cm−3 at 420 K. The electronic band gap (p-type conductor) was determined as Eg=0.06 eV. At room temperature the thermal conductivity of a pressed pellet is about κ=0.3 W K−1 m−1 and the Seebeck coefficient is S=43 μV K−1.  相似文献   

13.
The calcium cobalt oxide CaCo2O4 was synthesized for the first time and characterized from a powder X-ray diffraction study, measuring magnetic susceptibility, specific heat, electrical resistivity, and thermoelectric power. CaCo2O4 crystallizes in the CaFe2O4 (calcium ferrite)-type structure, consisting of an edge- and corner-shared CoO6 octahedral network. The structure of CaCo2O4 belongs to an orthorhombic system (space group: Pnma) with lattice parameters, a=8.789(2) Å, b=2.9006(7) Å and c=10.282(3) Å. Curie-Weiss-like behavior in magnetic susceptibility with the nearly trivalent cobalt low-spin state (Co3+, 3d, S=0), semiconductor-like temperature dependence of resistivity (ρ=3×10−1 Ω cm at 380 K) with dominant hopping conduction at low temperature, metallic-temperature-dependent large thermoelectric power (Seebeck coefficient: S=+147 μV/K at 380 K), and Schottky-type specific heat with a small Sommerfeld constant (γ=4.48(7) mJ/Co mol K2), were observed. These results suggest that the compound possesses a metallic electronic state with a small density of states at the Fermi level. The doped holes are localized at low temperatures due to disorder in the crystal. The carriers probably originate from slight off-stoichiometry of the phase. It was also found that S tends to increase even more beyond 380 K. The large S is possibly attributed to residual spin entropy and orbital degeneracy coupled with charges by strong electron correlation in the cobalt oxides.  相似文献   

14.
Single crystals of a new compound, BaBi2B4O10 were grown by cooling a melt with the stoichiometric composition. The crystal structure of the compound has been solved by direct methods and refined to R1=0.049 (wR=0.113) on the basis of 1813 unique observed reflections (|Fo|>4σ|Fo|). It is monoclinic, space group P21/c, a=10.150(2), b=6. 362(1), c=12.485(2) Å, β=102.87(1)o, V=786.0(2) Å3, Z=4. The structure is based upon anionic thick layers that are parallel to (001). The layers can be described as built from alternating novel borate [B4O10]8− chains and bismuthate [Bi2O5]4− chains extended along b-axis. The borate chains are composed of [B3O8]7− triborate groups of three tetrahedra and single triangles with a [BO2] radical. The borate chains are interleaved along the c-axis with rows of the Ba2+ cations so that the Ba atoms are located within the layers. The layers are connected by two nonequivalent Ba-O bonds as well as by two equivalent Bi-O bonds with bond valences in the range of 0.2-0.3 v.u.Thermal expansion of BaBi2B4O10 studied by high-temperature X-ray powder diffraction in the temperature range of 20-700 °C (temperature step 30-35 °C) is highly anisotropic. While the b and c unit-cell parameters increase almost linearly on heating, temperature dependencies of a parameter and β monoclinic angle show nonlinear behavior. As a result, on heating orientation of thermal expansion tensor changes, and bulk thermal expansion increases from 20×10−6 °C−1 at the first heating stage up to 57×10−6 °C−1 at 700 °C that can be attributed to the increase of thermal mobility of heavy Bi3+ and Ba2+ cations.  相似文献   

15.
Heterogeneous nanocomposites of p-type bismuth antimony telluride (Bi2−xSbxTe3) with lead telluride (PbTe) nanoinclusions have been prepared by an incipient wetness impregnation approach. The Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient were measured from 80 to 380 K in order to investigate the influence of PbTe nanoparticles on the thermoelectric performance of nanocomposites. The Seebeck coefficients and electrical resistivities of nanocomposites decrease with increasing PbTe nanoparticle concentration due to an increased hole concentration. The lattice thermal conductivity decreases with the addition of PbTe nanoparticles but the total thermal conductivity increases due to the increased electronic thermal conductivity. We conclude that the presence of nanosized PbTe in the bulk Bi2−xSbxTe3 matrix results in a collateral doping effect, which dominates transport properties. This study underscores the need for immiscible systems to achieve the decreased thermal transport properties possible from nanostructuring without compromising the electronic properties.  相似文献   

16.
The thermal conductivity and heat capacity of high-purity single crystals of yttrium titanate, Y2Ti2O7, have been determined over the temperature range 2 K?T?300 K. The experimental heat capacity is in very good agreement with an analysis based on three acoustic modes per unit cell (with the Debye characteristic temperature, θD, of ca. 970 K) and an assignment of the remaining 63 optic modes, as well as a correction for CpCv. From the integrated heat capacity data, the enthalpy and entropy relative to absolute zero, are, respectively, H(T=298.15 K)−H0=34.69 kJ mol−1 and S(T=298.15 K)−S0=211.2 J K−1 mol−1. The thermal conductivity shows a peak at ca. θD/50, characteristic of a highly purified crystal in which the phonon mean free path is about 10 μm in the defect/boundary low-temperature limit. The room-temperature thermal conductivity of Y2Ti2O7 is 2.8 W m−1 K−1, close to the calculated theoretical thermal conductivity, κmin, for fully coupled phonons at high temperatures.  相似文献   

17.
The germanate compound Cu2Sc2Ge4O13 has been synthesized by solid-state ceramic sintering techniques between 1173 and 1423 K. The structure was solved from single-crystal data by Patterson methods. The title compound is monoclinic, a=12.336(2) Å, b=8.7034(9) Å, c=4.8883(8) Å, β=95.74(2), space group P21/m, Z=4. The compound is isotypic with Cu2Fe2Ge4O13, described very recently. The structure consists of crankshaft-like chains of edge-sharing ScO6 octahedra running parallel to the crystallographic b-axis. These chains are linked laterally by [Cu2O6]8− dimers forming a sheet of metal-oxygen-polyhedra within the a-b plane. These sheets are separated along the c-axis by [Ge4O13]10− units. Cooling to 100 K does not alter the crystallographic symmetry of Cu2Sc2Ge4O13. While the b, c lattice parameter and the unit cell volume show a positive linear thermal expansion (α=6.4(2)×10−6, 5.0(2)×10−6 and 8.3(2)×10−6 K−1 respectively), the a lattice parameter exhibits a negative thermal expansion (α=−3.0(2)×10−6 K−1) for the complete T-range investigated. This negative thermal expansion of a is mainly due to the increase of the Cu-Cu interatomic distance, which is along the a-axis. Average bond lengths remain almost constant between 100 and 298 K, whereas individual ones partly show both significant shortages and lengthening.  相似文献   

18.
A novel, simple, and cost-effective route to PbTe nanoparticles and films is reported in this paper. The PbTe nanoparticles and films are fabricated by a chemical bath method, at room temperature and ambient pressure, using conventional chemicals as starting materials. The average grain size of the nanoparticles collected at the bottom of the bath is ∼25 nm. The film deposited on glass substrate is dense, smooth, and uniform with silver gray metallic luster. The film exhibits p-type conduction and has a moderate Seebeck coefficient value (∼147 μV K−1) and low electrical conductivity (∼0.017 S cm−1). The formation mechanism of the PbTe nanoparticles and films is proposed.  相似文献   

19.
The Ca2(ZnxFe2−x)O5 series was synthesized and characterized to determine the influence of zinc dopant on the brownmillerite structure for thermoelectric applications. All single-phase compounds exhibited Pnma symmetry at room temperature up to the solubility limit at x=0.10. High-temperature X-ray powder diffraction was used to show that the nature of the Pnma-Imma(0 0 γ)s00 transition in Ca2Fe2O5 is modified by the presence of zinc. While the Zn-free composition transitions to an incommensurate phase, the Zn-containing phases transition instead to a commensurate phase, Imma(0 0 γ)s00 with γ=1/2. Both the Néel temperature and the onset temperature of the Pnma-Imma(0 0 γ)s00 phase transition decreased with increasing zinc concentration. Rietveld analysis of the in situ diffraction pattern for the x=0 sample at 1300 °C demonstrates that the structure contains statistically disordered chain orientations as described by space group Imma. Thermoelectric properties were analyzed in air from 100 to 800 °C. The positive Seebeck coefficient revealed hole-type conduction for all compositions. Doped samples exhibited electrical conductivities up to 3.4 S/cm and thermal conductivity of 1.5 W/mK. Transport analysis revealed thermally activated mobility consistent with polaron conduction behavior for all compositions.  相似文献   

20.
The transport properties and lithium insertion mechanism into the first mixed valence silver-copper oxide AgCuO2 and the B-site mixed magnetic delafossite AgCu0.5Mn0.5O2 were investigated by means of four probes DC measurements combined with thermopower measurements and in situ XRD investigations. AgCuO2 and AgCu0.5Mn0.5O2 display p-type conductivity with Seebeck coefficient of Q=+2.46 and +78.83 μV/K and conductivity values of σ=3.2×10−1 and 1.8×10−4 S/cm, respectively. The high conductivity together with the low Seebeck coefficient of AgCuO2 is explained as a result of the mixed valence state between Ag and Cu sites. The electrochemically assisted lithium insertion into AgCuO2 shows a solid solution domain between x=0 and 0.8Li+ followed by a plateau nearby 1.7 V (vs. Li+/Li) entailing the reduction of silver to silver metal accordingly to a displacement reaction. During the solid solution, a rapid structure amorphization was observed. The delafossite AgCu0.5Mn0.5O2 also exhibits Li+/Ag+ displacement reaction in a comparable potential range than AgCuO2; however, with a prior narrow solid solution domain and a less rapid amorphization process. AgCuO2 and AgCu0.5Mn0.5O2 provide a discharge gravimetric capacity of 265 and 230 mA h/g above 1.5 V (vs. Li+/Li), respectively, with no evidence of a new defined phases.  相似文献   

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