Stopping power and energy loss straggling of thin Formvar foil for 0.3–2.7 MeV protons and alpha particles

Stopping power and energy loss straggling data for protons (¹H⁺) and alpha particles (⁴He⁺) crossing Formvar thin polymeric foils (thickness of ～0.3 μm) have been measured in the energy range (0.3–2.7) MeV by using the indirect transmission technique. The determined stopping power data were compared to SRIM-2010, PSTAR or ASTAR calculation codes and then analyzed in term of the modified Bethe–Bloch theory to extract the target mean excitation and ionization potential 〈I〉. A resulting value of 〈I〉≈(69.2±1.8) eV was deduced from proton stopping data. The measured straggling data were corrected from surface roughness effects due to target thickness inhomogeneity observed by the atomic force microscopy (AFM) technique. The obtained data were then compared to derived straggling values by Bohr's and Bethe–Livingston's classical theories or by Yang's empirical formula. A deviation of ～40%–80% from the Bohr's straggling value has been observed for all reported energies, suggesting that the Bohr theory cannot be correctly applied to describe the electronic energy loss straggling process with the used low thickness of Formvar foil. The inner-shell contribution of target electrons to energy loss process is also advanced to explain the observed deviation from experiment in case of He⁺ ions. Finally, the reliability of Bragg's additivity rule was discussed in case of stopping power and straggling results.     

Laser-induced photodissociation of He+2

The momentum distributions of He⁺ fragments from photodissociation of He⁺₂ ions have been recorded in a crossed-beams experiment. The discrete values of the kinetic energy releases can be predicted from the vibrational spacings in the ground state of the primary ions.     

Characterization of tantalum pentoxide films with backscattering spectrometry

The backscattering performance of 2 MeV He⁺ and N⁺ beams was studied using Ta₂O₅ targets as test targets. To allow ready comparison, the scattering geometry, projectile energy, and detection system were kept identical for both beams. Tantalum oxide films with thicknesses of 200 Å to 4000 Å were examined. For thickness determinations, beam straggling was found to be the major limiting factor. For thickness measurements below 1000 Å the N⁺ beam is best suited for larger thicknesses; the He⁺ beam is superior. For stoichiometric determinations both beams provide equally accurated and precise data.     

Time-resolved optical emission spectroscopic measurements of He plasma induced by a high-power CO2 pulsed laser

Laser-induced breakdown spectroscopy of helium plasma, initially at room temperature and pressures ranging from 12 to 101 kPa was investigated using a transverse excitation atmospheric CO₂ pulsed laser (λ = 9.621 and 10.591 μm, a full width at half maximum of 64 ns, and an intensity from 1.5 to 5.36 GW cm⁻²). The helium breakdown spectrum is mainly due to electronic relaxation of excited He, He⁺ and H. Plasma characteristics were examined in detail on the emission lines of He and He⁺ by the time-integrated and time-resolved optical emission spectroscopy technique. Optical breakdown threshold intensities, ionization degree and plasma temperatures were obtained. An auxiliary metal mesh target was used to analyze the temporal evolution of the species in the plasma. The results show a faster decay of the continuum emission and He⁺ species than in the case of neutral He atoms. The velocity and kinetic energy distributions for He and He⁺ species were obtained from time-of-flight measurements. Electron density in the laser-induced plasma was estimated from the analysis of spectral data at various times from the laser pulse incidence. Temporal evolution of electron density has been used for the estimation of the three-body electron-ion recombination rate constant.     

Positron annihilation and ion beam analysis of ion-bombardment-induced hydrogen release and oxidation of ultra high molecular weight polyethylene

Ultra high molecular weight polyethylene was bombarded with He⁺ and Ar⁺ ions to fluences ranging from 10¹³ to 2×10¹⁶ ions/cm². Rutherford backscattering and nuclear reaction analysis were applied to study mechanism of oxygen uptake and hydrogen release induced by ion beam bombardment. The influence of ion bombardment on positron annihilation lifetime parameters is also discussed. Hydrogen release was observed with increasing ion dose and was correlated to the ion stopping power. An important effect observed, was the rapid oxidation of samples after exposure to air.     

He++N2 Charge Transfer Reaction: An Ab initio Analysis

An ab initio analysis on the involved potential energy surfaces is presented for the investigation of the charge transfer mechanism for the He⁺+N₂ system. At high collision energy, as many as seven low-lying electronic states are observed to be involved in the charge transfer mechanism. Potential energy surfaces for these low-lying electronic states have been computed in the Jacobi scattering coordinates, applying multireference configuration interaction level of theory and aug-cc-pVQZ basis sets. Asymptotes for the ground and various excited states are assigned to mark the entrance (He⁺+N₂) and charge transfer channels (He+N₂⁺). Nonadiabatic coupling matrix elements and quasi-diabatic potential energy surfaces have been computed for all seven states to rationalize the available experimental data on the charge transfer processes and to facilitate dynamics studies.     

Scattering of low energy He2+ ions by Ne,Ar, and Kr atoms

Experimental studies of collisions of He²⁺ ions with Ne, Ar, and Kr atoms have been carried out at laboratory kinetic energies in the range 8 ? E₁ ? 10 eV. For each collision pair, relative differential cross sections for elastic scattering, and for the formation of He⁺ by single charge transfer [e.g., He²⁺ + R = He⁺ + (R⁺)^*] were measured. Information concerning the initial states of the charge transfer products was also obtained, from measurements of the kinetic energy distributions of the He⁺ + He = Ne⁺(2s 2p⁶²S) ± He⁺(²S), whereas for the other systems, transfer proceeds via a number of channels. The He⁺-ion kinetic energy measurements indicated that for He²⁺. Ar both Ar⁺ both Ar⁺ and Ar²⁺ are formed in transfer, and that for He²⁺, Kr only Kr²⁺ (and no Kr⁺) was formed.The differential elastic scattering patterns were analyzed by means of cross section calculations based on an approximate form of the optical model. These calculations indicated that the pronounced shoulders observed in the σ_el(θ) versus θ curves arose from scattering from an attractive potential well, in the presence of concurrent inelastic scattering. Using parametrized Morse potentials to represent the ground electronic states of (HeNe)²⁺, (HeAr)²⁺, and (HeKr)²⁺, the corresponding well-depth are estimated to be, respectively: 1.0 eV, 2.1 eV and 2.6 eV.     

Sputtering of bismuth thin films under MeV Cu heavy ion irradiation: Experimental data and inelastic thermal spike model interpretation.

The sputtering of bismuth (Bi/Si) thin films deposited onto silicon substrates and irradiated by swift Cu^q+ heavy ions (q = +4 to +7) was investigated by varying both the ion energy over the 10 to 26‐MeV range and the ion fluence ϕ from 5.1 × 10¹³ cm⁻² to 3.4 × 10¹⁵ cm⁻². The sputtering yields were determined experimentally via the Rutherford backscattering spectrometry technique using a 2‐MeV He⁺ ion beam. The measured sputtering yields versus Cu⁷⁺ ion fluence for a fixed incident energy of 26 MeV exhibit a significant depression at very low ϕ‐values flowed by a steady‐state regime above ~1.6 × 10¹⁴ cm⁻², similarly to those previously pointed out for Bi thin films irradiated by MeV heavy ions. By fixing the incident ion fluence to a mean value of ~2.6 × 10¹⁵ cm⁻² in the upper part of the yield saturation regime, the measured sputtering yield data versus ion energy were found to increase with increasing the electronic stopping power in the Bi target material. Their comparison to theoretical predicted models is discussed. A good agreement is observed between the measured sputtering yields and the predicted ones when considering the contribution of 2 competitive processes of nuclear and electronic energy losses via, respectively, the SRIM simulation code and the inelastic thermal spike model using refined parameters of the ion slowing down with reduced thermophysical proprieties of the Bi thin films.     

Ab initio calculation of the vertical excitation energies of small helium cluster ions

Quantum chemical ab initio calculations have been performed for the vertical excitation energies and oscillator strengths of all low-lying electronically excited states of small helium cluster ions, He _n ⁺ ,n=2, ..., 7. The geometrical structures of the ions were fixed at the equilibrium geometries of the respective ground states, for He ₄ ⁺ and He ₅ ⁺ also one alternative structure was considered. The low-lying excited states can be classified into two categories: the electronic transition can occur either within the central He ₂ ⁺ or He ₃ ⁺ unit or from the peripheral weakly bound He atoms to this unit. The latter transitions are very weak (f≈0.001), closely spaced, with vertical excitation energies of about 5.7 eV. The He ₂ ⁺ and He ₃ ⁺ units have strong transitions at 9.93 and 5.55 eV, respectively; these transitions are only slightly blue-shifted if He ₂ ⁺ or He ₃ ⁺ are placed as “chromophores” into the centre of a larger He _n ⁺ cluster. The large difference in the vertical excitation energy of the strong transition should enable an experimental decision of the question whether the cluster ions have He ₂ ⁺ or He ₃ ⁺ cores.     

Excitation and decay of the C2Σ+u state of N+2 following collisions of He+ ions with N2 isotopes

A quantitative analysis is made of the N⁺₂ “2nd negative” emission (“2N”: C²Σ⁺_u → X²Σ⁺_g) produced by the impact of 500 eV to 25 keV He⁺ beams on ¹⁴N₂, ¹⁴N¹⁵N and ¹⁵N₂. Above about 5 keV, the relative 2N emission rates from the various vibrational levels of the C state are the same as those observed for ? 2 keV Ne⁺, or > / 90 eV electron-impact. These limiting distributions are compared to those predicted for a Franck-Condon excitation of the C state, modified by configuration interaction. The weakening in 2N emission at the vibrational levels ν′ > / 3 is ascribed to spontaneous C-state predissociation. The data fully confirm recent reports that this predissociation extends over a wide range of ν′ and that it is subject to a strong isotope effect. The ratios of the rates of C-state predissociation to 2N emission are obtained for the levels ν′ = 3 to 8 of each nitrogen isotope. By means of these data it is shown that near-resonant charge transfer dominates the distribution of vibrational excitation probabilities only at energies below about 10 eV. A comparison is made of absolute cross-sections for C-state emission with those for N⁺ and N⁺₂ production in He⁺/¹⁴N₂ collisions at energies between 5.5 eV and 25 keV.     

Fast side-chain losses in keV ion-induced dissociation of protonated peptides

In this paper, we compare ionization and dissociation of a series of singly and doubly protonated peptides, namely leucine enkephalin, bradykinin, LHRH and substance P as induced by collisions with keV H⁺, He⁺ and He²⁺. For all peptides under study, the fragmentation pattern depends strongly on the electronic structure of the projectile ions. Immonium ions, side-chains and their fragments dominate the spectrum whereas fragments due to peptide backbone cleavage are weak or even almost absent for He⁺. Here, resonant electron capture from the peptide is ruled out and only interaction channels accompanied by much higher excitation contribute. Cleavage of the side-chain linkage appears to be a process alternative to backbone fragmentation occurring after internal vibrational redistribution of excitation energy. Depending on the peptide, this process can lead to the loss of a side-chain cation (leucine enkephalin, LHRH) or a neutral side-chain (substance P).     

Scattering and surface recoiling TOF spectra of neutrals and ions from rare gas bombardment of Ge,GeO2, and H2O adsorbed on Ge

TOF spectra of scattered primary and surface recoiled neutrals and ions for He⁺, Ne⁺ and Ar⁺ bombardment of Ge, GeO₂, H₂O adsorbed on Ge are presented. Ion fractions are determined for scattered and recoiled particles and the role of scattering cross sections and surface charging effects on detection of recoiling hydrogen are considered.     

Recoil-ion momentum distribution for He(e,2e)He+-and He(e,3e)He++-reactions

Using Recoil-Ion Momentum Spectroscopy (RIMS) we have measured the momenta of recoiling target ions in He(e,2e)He⁺- and He(e,3e)He⁺⁺-reactions at impact energies between 270 ev and 3200 eV. The recoil-ion momentum reflecting the sum momentum of all outgoing electrons was determined for the first time in all three spatial dimensions separately for single and double ionization by electron impact. The data are compared to results of a nCTMC-calculation.     

Chemical composition and crystal structure of β-alumina type R+-gallate (R+ = K+, NH+4)

The crystal structures of β-alumina type K⁺-gallate (K⁺-β-gallate), Mg²⁺-doped K⁺-β-gallate, and NH⁺₄-β-gallate were refined by the single crystal X-ray diffraction method. The positive charges of excess K⁺ ions in K⁺-β-gallate were compensated by O^2? ions in the mO site which coordinated with interstitial Ga³⁺ ions. The charge compensation mechanism mentioned above was changed by doping with Mg²⁺ ions. The excess charges in Mg²⁺-doped K⁺-β-gallate were compensated by the replacement of Mg²⁺ ions for Ga³⁺ ions at the middle of spinel block. No defects were found in NH⁺₄-β-gallate for the charge compensation, which was completely consistent with the result of thermal analysis that indicated a stoichiometric composition of NH⁺₄-β-gallate.     

Does He2 Exist?

For the electronic ground state X ¹Σ⁺_g, the potential-energy function of He₂ reported by Aziz et al. has been transformed into the form V(z), containing only eight parameters, which is more suitable for the investigation of the existence of states of discrete energy. We found no evidence that a bound vibration-rotational state of the stable diatomic molecule ³He₂ or ⁴He₂, even if rotating, can exist in the electronic ground state.     

SIMS depth profile analysis using MCs+ molecular ions

Summary The use of Cs⁺ primary ions in conjunction with the detection of MCs⁺ molecular ions (where M is the element to be monitored) in SIMS depth profiling is shown to be an efficient method of minimizing the variations of ion yields with sample composition, e.g., at the interface of multilayer structures. Depth profiles of several such samples demonstrate that MCs⁺ intensities follow closely the concentrations of the respective elements, providing the possibility of a (semi)quantitative analysis of major components by means of secondary ion mass spectrometry. As indicated by the similarity of their energy distribution data, the formation and emission process of MCs⁺ molecules seems coupled to that of Cs⁺ ions.     

Radiation Stability of Copper Films under Irradiation with He<Superscript>2+</Superscript> Ions

The effect of irradiation of copper films with low-energy He²⁺ ions on their structural properties has been studied. The surface morphology and structural properties of the samples before and after irradiation have been examined by scanning electron microscopy, energy dispersive analysis, and X-ray diffraction. Bombardment of the initial samples with He²⁺ ions at a fluence of 1 × 10¹⁶ion/cm² alters the surface morphology of copper films and leads to the formation of nanoscale inclusions of hexagonal shape. An increase in the fluence to 1 × 10¹⁷ ion/cm² and higher results in the formation of cracks and amorphous oxide inclusions on the sample surface.     

Luminescence in near-thermal charge exchange. II. He+ + H2O and He+ + D2O

An ICR spectrometer fitted with synchronous photon counting equipment is used to study the emission produced by near-thermal (? 0.1 eV) collisions between He⁺ and H₂O (D₂). Within the investigated wavelength region, 185 to 500 nm, the only significant emission features are the A³Π (υ' ? 3) → X³Σ^? bands in OH⁺ and OD⁺, and the A²Σ⁺ → X²Π(0.0) band in OH and, possibly, in OD. The corresponding excitation rate constants represent only ? 2% of the total He⁺/H₂O (D₂O) charge transfer. The resonant electron-jump model for thermal-energy charge exchange is discussed in the light of recent information on the He⁺/H₂O reaction and on the excited states of H₂O⁺ and their excitation by electron and photon impact on H₂O (D₂O).     

Review on the thickness measurement of ultrathin oxide films by mutual calibration method

Mutual calibration was suggested as a method to determine the absolute thickness of ultrathin oxide films. It was motivated from the large offset values in the reported thicknesses in the Consultative Committee for Amount of Substance (CCQM) pilot study P-38 for the thickness measurement of SiO₂ films on Si(100) and Si(111) substrates in 2004. Large offset values from 0.5 to 1.0 nm were reported in the thicknesses by ellipsometry, X-ray reflectometry (XRR), medium-energy ion scattering spectrometry (MEIS), Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA), and transmission electron microscopy (TEM). However, the offset value for the thicknesses by X-ray photoelectron spectroscopy (XPS) was close to zero (−0.013 nm). From these results, the mutual calibration method was reported for the thickness measurement of SiO₂ films on Si(100) by combination of TEM and XPS. The mutual calibration method has been applied for the thickness measurements of hetero oxide films such as Al₂O₃ and HfO₂. Recently, the effect of surface contamination was reported to be critical to the thickness measurement of HfO₂ films by XPS. On the other hand, MEIS was proved to be a powerful zero offset method which is not affected by the surface contamination. As a result, the reference thicknesses in the CCQM pilot study P-190 for the thickness measurement of HfO₂ films on Si(100) substrate were determined by mutual calibration method from the average XRR data and MEIS analysis. Conclusively, the thicknesses of ultrathin oxide films can be traceably certified by mutual calibration method and most thickness measurement methods can be calibrated from the certified thicknesses.     

Effect of Ar+, He+, and S+ Irradiation on n-InP Single Crystal

The irradiation effects of Ar⁺, He⁺, and S⁺ with energy from 10 eV to 180 eV on n-InP(100) surface are analyzed by X-ray photoelectron spectroscopy and low energy electron diffraction. After irradiation on the n-InP surface, damage on the surface, displacement of the Fermilevel and formation of sulfur species on S⁺ exposed surface are found and studied. Successive annealing is done to suppress the surface states introduced by S⁺ exposure. However, it is unsuccessful in removing the damage caused by noble ions. Besides, S⁺ ions can efficiently repair the Ar⁺ damaged surface, and finally form a fine 2×2 InP surface.